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    MARKING 59 SOT23 Search Results

    MARKING 59 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    MARKING 59 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking 702 sot23

    Abstract: 702 sot23 SP SOT23 ON5258 marking code 10 sot23 marking code p12 sot23 MARKING CODE 13 SOT23 Philips SOT23 code marking ON5257 marking code 702 SOT23
    Text: New Marking Codes SOT23 New Marking Codes SOT23 SOT23 Types from Hamburg, Hazel Grove and Nijmegen without a vendor code will be changed in their marking to a two digit product code and a one digit vendor code. The vendor code indicates the location of the assembly,


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    PDF BSR18A marking 702 sot23 702 sot23 SP SOT23 ON5258 marking code 10 sot23 marking code p12 sot23 MARKING CODE 13 SOT23 Philips SOT23 code marking ON5257 marking code 702 SOT23

    MMQA5V6T3 diode tvs

    Abstract: 6A2 SOT-23 marking code 5A6 sot 26 5a6 zener diode sot-23 5a6 zener diode transistor sc 308 marking code 5A6 SOT323 MMQA12VT1 MMQA13VT1 MMQA18VT1
    Text: MMQA Quad Common Anode Series Preferred Devices SC-59 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection http://onsemi.com This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is


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    PDF SC-59 r14525 MMQA5V6T3 diode tvs 6A2 SOT-23 marking code 5A6 sot 26 5a6 zener diode sot-23 5a6 zener diode transistor sc 308 marking code 5A6 SOT323 MMQA12VT1 MMQA13VT1 MMQA18VT1

    5a6 zener diode

    Abstract: 5a6 zener diode sot-23 MMQA5V6T3 diode tvs MMQA24VT1 318F MMQA12VT1 MMQA13VT1 MMQA15VT1 MMQA18VT1 MMQA20VT1
    Text: MMQA Quad Common Anode Series Preferred Devices SC-59 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection http://onsemi.com This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is


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    PDF SC-59 r14525 5a6 zener diode 5a6 zener diode sot-23 MMQA5V6T3 diode tvs MMQA24VT1 318F MMQA12VT1 MMQA13VT1 MMQA15VT1 MMQA18VT1 MMQA20VT1

    ZXM41N0F

    Abstract: ZXM41N10F
    Text: ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage V DS 100 V Drain-gate voltage V DGR


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    PDF ZXM41N10F ZXM41N0F ZXM41N10F

    BC858C

    Abstract: 65 marking sot23
    Text: BC858C SOT23 PNP Transistors Features: • Silicon Planar Epitaxial Transistors. • PNP Transistors. Pin Configuration: 1. Base 2. Emitter 3. Collector Marking BC858C = 3L Dimensions : Millimetres Absolute Maximum Ratings - Symbol Collector-Emitter Voltage +VBE = 1V


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    PDF BC858C BC858C 65 marking sot23

    BC858C

    Abstract: 2KW sot23
    Text: BC858C SOT23 PNP Transistors Features: • Silicon Planar Epitaxial Transistors. • PNP transistors. Package Outline Details Pin Configuration 1. Base 2. Emitter 3. Collector Marking BC858C = 3L Absolute Maximum Ratings - Symbol Collector–emitter voltage +VBE = 1V


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    PDF BC858C BC858C 2KW sot23

    Untitled

    Abstract: No abstract text available
    Text: Obsolete. Alternative is BSS123. ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage


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    PDF BSS123. ZXM41N10F

    D8541

    Abstract: alternative bss123 4446 BSS123 ZXM41N0F ZXM41N10F
    Text: Obsolete. Alternative is BSS123. ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL Drain-source voltage Drain-gate voltage


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    PDF BSS123. ZXM41N10F bre611 D8541 alternative bss123 4446 BSS123 ZXM41N0F ZXM41N10F

    Untitled

    Abstract: No abstract text available
    Text: HT71XX-1 30mA Low Power LDO Features • Low power consumption · High input voltage up to 24V · Low voltage drop · Output voltage accuracy: tolerance ±3% · Low temperature coefficient · TO92, SOT89 and SOT23-5 package Applications · Battery-powered equipment


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    PDF HT71XX-1 OT23-5 HT71XX-1

    Untitled

    Abstract: No abstract text available
    Text: ZXTN25040DFL 40V, SOT23, NPN low power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 1.5A VCE(sat) < 80mV @ 1A RCE(sat) = 56 m⍀ PD = 350mW Complementary part number ZXTP25040DFL Description C Advanced process capability has been used to achieve high current gain


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    PDF ZXTN25040DFL 350mW ZXTP25040DFL

    marking 1a1

    Abstract: No abstract text available
    Text: ZXTN25020DFL 20V, SOT23, NPN low power transistor Summary BVCEX > 100V BVCEO > 20V BVECO > 5V IC cont = 2A ICM = 8A VCE(sat) < 65mV @ 1A RCE(sat) = 55m⍀ PD = 350mW Complementary part number ZXTP25020DFL Description C Advanced process capability has been used to achieve high current gain


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    PDF ZXTN25020DFL 350mW ZXTP25020DFL ZXTN25020DFLTA marking 1a1

    MOSFET sot23-6 QG

    Abstract: MARKING TH SOT23-6 MOSFET ZXMN2B03E6 ZXMN2B03E6TA zxm* sot23-6 MOSFET sot23-6 18a marking sot23
    Text: ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.040 @ VGS= 4.5V 5.4 0.055 @ VGS= 2.5V 4.6 0.075 @ VGS= 1.8V 4.0 V(BR)DSS 20 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.


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    PDF ZXMN2B03E6 OT23-6 MOSFET sot23-6 QG MARKING TH SOT23-6 MOSFET ZXMN2B03E6 ZXMN2B03E6TA zxm* sot23-6 MOSFET sot23-6 18a marking sot23

    ZXTN07012EFF

    Abstract: ZXTP07012EFF ZXTP07012EFFTA
    Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications


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    PDF ZXTP07012EFF OT23F, -75mV ZXTN07012EFF OT23F OT23F ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 0.200 @ VGS= 1.8V 1.7 V(BR)DSS 20 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.


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    PDF ZXMN2B01F

    HT7044A-1

    Abstract: HT7027A-1 HT7039A-1 HT7050A-1 0c sot89 HT7033A-1 HT7022A-1 HT7024A-1 HT70XXA-1 marking code w2 sot23-5
    Text: HT70XXA-1 TinyPowerTM Voltage Detector Features • Low power consumption · Output voltage accuracy: tolerance ± 3% · Low temperature coefficient · Built-in hysteresis characteristic · High input voltage range up to 24V · TO92, SOT89 and SOT23-5 package


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    PDF HT70XXA-1 OT23-5 HT70XXA-1 HT7044A-1 HT7027A-1 HT7039A-1 HT7050A-1 0c sot89 HT7033A-1 HT7022A-1 HT7024A-1 marking code w2 sot23-5

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2B14FH 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.055 @ VGS= 4.5V 4.3 0.075 @ VGS= 2.5V 3.7 0.100 @ VGS= 1.8V 3.2 V(BR)DSS 20 Description This new generation of trench MOSFETs from Zetex features low onresistance achievable with low gate drive.


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    PDF ZXMN2B14FH

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (⍀) ID (A) 0.040 @ VGS= 4.5V 5.4 0.055 @ VGS= 2.5V 4.6 0.075 @ VGS= 1.8V 4.0 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.


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    PDF ZXMN2B03E6 OT23-6

    BAW56

    Abstract: cd 5411
    Text: BAW56 SOT23 High Speed Switching Diodes Features: • Silicon planar epitaxial high-speed diodes. • Silicon planar high-speed switching series diode pair. Package Outline Details Pin Configuration 1. Cathode k1 2. Cathode (k2) 3. Anode (a) Dimensions : Millimetres


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    PDF BAW56 BAW56 cd 5411

    Untitled

    Abstract: No abstract text available
    Text: HT1015-1 1.5V Low Power LDO Features • Low power consumption · Wide operating voltage 12V max. · Low voltage drop · TO92, SOT89 and SOT23-5 package · Low temperature coefficient Applications · Audio/Video equipment · Battery-powered equipment · Communication equipment


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    PDF HT1015-1 OT23-5 HT1015-1

    h1 sot23-5

    Abstract: marking code NO3 5PIN no1 sot23-5 SOT23 WU marking code 10 sot23 SG3525 IC SOT89 24 ldo t1 SOT23-5 HT1015-1 sot23-5 thermal resistance
    Text: HT1015-1 1.5V Low Power LDO Features • Low power consumption · Wide operating voltage 12V max. · Low voltage drop · TO92, SOT89 and SOT23-5 package · Low temperature coefficient Applications · Battery-powered equipment · Audio/Video equipment · Communication equipment


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    PDF HT1015-1 OT23-5 HT1015-1 h1 sot23-5 marking code NO3 5PIN no1 sot23-5 SOT23 WU marking code 10 sot23 SG3525 IC SOT89 24 ldo t1 SOT23-5 sot23-5 thermal resistance

    ON Semiconductor marking

    Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
    Text: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does


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    PDF DLD601/D Mar-2001 r14525 DLD601 ON Semiconductor marking fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline

    Untitled

    Abstract: No abstract text available
    Text: ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC cont = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m⍀ PD = 1.5W Complementary part number ZXTP19060CFF Description C This mid voltage NPN transistor has been designed for applications


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    PDF ZXTN19060CFF OT23F, ZXTP19060CFF OT23F

    hm marking smd DIODE

    Abstract: diode marking smd 7c
    Text: RB401D Diode, Schottky barrier, surface mount These mold-type diodes are suitable for high density surface mounting on printed circuit boards. Dimensions Units : mm 2 .9± 0.2 Features • available in SMD3 (SMD, SC-59) package (similar to SOT-23) • part marking, D3U


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    PDF RB401D SC-59) OT-23) RB401D 001S4flG hm marking smd DIODE diode marking smd 7c

    PXTA14

    Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
    Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.


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    PDF OT143, OT323, OD123 OD323 BZV49 BAW56W BSR40 2PB709AR BAW56 BSR41 PXTA14 mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401