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    MARKING 5B1 Search Results

    MARKING 5B1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING 5B1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5B1 SOT23

    Abstract: 5B1 SOT-23 sot23 marking 5c1 marking 5b1
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16LT1 DEVICE MARKING AND ORDERING INFORMATION Device Marking LBC807-16LT1 LBC807-16LT1G 5A1 SOT-23 5B1 SOT-23 5B1 Pb-Free LBC807-40LT1 LBC807-40LT1G


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    PDF LBC807-16LT1 LBC807-16LT1G OT-23 LBC807-40LT1 LBC807-40LT1G LBC807-25LT1 LBC807-25LT1G 5B1 SOT23 5B1 SOT-23 sot23 marking 5c1 marking 5b1

    marking 6a2 smd

    Abstract: zener Z11B
    Text: SMD Zener Diodes Leadless - 500mW 500mW Marking Code Part No. TLZJ2.0A TLZJ2.0B TLZJ2.2A TLZJ2.2B TLZJ2.4A TLZJ2.4B TLZJ2.7A TLZJ2.7B TLZJ3.0A TLZJ3.0B TLZJ3.3A TLZJ3.3B TLZJ3.6A TLZJ3.6B TLZJ3.9A TLZJ3.9B TLZJ4.3A TLZJ4.3B TLZJ4.3C TLZJ4.7A TLZJ4.7B TLZJ4.7C


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    PDF 500mW 94Leakage marking 6a2 smd zener Z11B

    BC807-40

    Abstract: 5B1 SOT-23 BC807-16 BC807-25
    Text: BC807-16/ BC807-25 BC807-40 General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings TA=25 C unless otherwise noted Symbol Value Collector-Emitter Voltage V CEO -45 Unit V Collector-Base Voltage VCBO


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    PDF BC807-16/ BC807-25 BC807-40 OT-23 BC807-16/BC807-25 OT-23 BC807-40 5B1 SOT-23 BC807-16 BC807-25

    TK4892

    Abstract: No abstract text available
    Text: TS3L4892 16-BIT TO 8-BIT SPDT GIGABIT LAN SWITCH WITH LED SWITCH www.ti.com SCDS251 – MARCH 2008 FEATURES 1 28 29 31 30 32 34 33 A0 VCC LED2 2LED1 2LED2 0B1 1B1 0B2 1B2 36 35 20 9 19 18 21 8 17 22 7 16 23 6 15 24 5 14 25 4 12 3 SEL 2B1 3B1 2B2 3B2 4B1 5B1


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    PDF TS3L4892 16-BIT SCDS251 000-V A114-B, TK4892

    Untitled

    Abstract: No abstract text available
    Text: TS3L4892 16-BIT TO 8-BIT SPDT GIGABIT LAN SWITCH WITH LED SWITCH www.ti.com SCDS251 – MARCH 2008 FEATURES 1 28 29 31 30 32 34 33 A0 VCC LED2 2LED1 2LED2 0B1 1B1 0B2 1B2 36 35 20 9 19 18 21 8 17 22 7 16 23 6 15 24 5 14 25 4 12 3 SEL 2B1 3B1 2B2 3B2 4B1 5B1


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    PDF TS3L4892 16-BIT SCDS251

    IPB065N15N3

    Abstract: 5F040 ED 05 Diode marking EB5
    Text: IPB065N15N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H -( J R  , ? >=1H-(     .&- Y" I9 )+( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D


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    PDF IPB065N15N3 7865AE5 5F040 ED 05 Diode marking EB5

    Untitled

    Abstract: No abstract text available
    Text: IPB027N10N3 G  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R 9H"[Z#$YMd *&/ Y I9 )*( 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5


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    PDF IPB027N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à

    Untitled

    Abstract: No abstract text available
    Text: BSC360N15NS3 G  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H -( J R 9H"[Z#$YMd +. Y I9 + 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀  ฀T฀?@5B1D9>7฀D5=@5B1DEB5


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    PDF BSC360N15NS3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à

    Untitled

    Abstract: No abstract text available
    Text: IPA075N15N3 G Ie\Q TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y I9 ,+ 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5 Q฀)2 6B55฀<514฀@<1D9>7฀+?",฀3?=@<91>D


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    PDF IPA075N15N3 D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à

    Untitled

    Abstract: No abstract text available
    Text: IPD122N10N3 G TM  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀ )*&* Y I ฀ -1 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5


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    PDF IPD122N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à

    Untitled

    Abstract: No abstract text available
    Text: IPA086N10N3 G TM  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀ 0&. Y I9 ,- 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5


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    PDF IPA086N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à

    CCD MARKING

    Abstract: No abstract text available
    Text: IPA075N15N3 G Ie\Q "%&$!"#TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y" I9 ,+ 6 Q . 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D EB5 Q ) 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9 1>D Q * E1<96954 13 3 ? B49>7 D? $    


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    PDF IPA075N15N3 CCD MARKING

    marking 9D

    Abstract: marking eb5 diode 1D marking g9 55B5 7865a DIODE Z6 Diode 9H DIODE ED 99 package marking 5f
    Text: IPA086N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H ( J R  , ? >=1H 0&. Y" I9 ,- 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D


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    PDF IPA086N10N3 7865AE5 marking 9D marking eb5 diode 1D marking g9 55B5 7865a DIODE Z6 Diode 9H DIODE ED 99 package marking 5f

    4b 5c marking

    Abstract: No abstract text available
    Text: BSC360N15NS3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H -( J R 9H"[Z#$YMd +. Y" I9 + 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q  T ? @5B1D9>7 D5=@5B1D EB5


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    PDF BSC360N15NS3 4b 5c marking

    Q451

    Abstract: 95B9 C19B marking EB5 d91d package marking 5f
    Text: IPD180N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H ( J R  , ? >=1H-(    )0 Y" I ,+ 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D


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    PDF IPD180N10N3 7865AE5 Q451 95B9 C19B marking EB5 d91d package marking 5f

    IPD320N20N3

    Abstract: marking EB5
    Text: IPD320N20N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H *( J R 9H"[Z#$YMd +* Y" I9 +, 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D EB5


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    PDF IPD320N20N3 7865AE5 marking EB5

    IPD600N25N3 G

    Abstract: No abstract text available
    Text: IPD600N25N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H *-( J R 9H"[Z#$YMd .( Y" I9 *- 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D EB5


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    PDF IPD600N25N3 7865AE5 IPD600N25N3 G

    IPB027N10N3

    Abstract: marking 1D 55B5 Q451 EB5 MARKING marking G9
    Text: IPB027N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H ( J R 9H"[Z#$YMd *&/ Y" I9 )*( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D


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    PDF IPB027N10N3 7865AE5 marking 1D 55B5 Q451 EB5 MARKING marking G9

    Samsung Electro-Mechanics

    Abstract: HP8920A marking D9 diode phase*detector ru2475b18haa ND15
    Text: APPROVAL APP LIC ABL E CUS TOM ER MOD EL RU 240 3H1 8HA A RU 247 5B1 8HA A TIT LE No. MO DEL N o. PO INT D ES CRI BE D AS A BOV E: TH IS RF -UN IT IS D ESI GNE D FOR 2 .4G Hz CO RDL ESS P HON E. WE S UBM IT AP PRO VAL F OR YO UR EX AMI NAT ION A S FOL LOW .


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    PDF

    TK4892

    Abstract: No abstract text available
    Text: TS3L4892 16-BIT TO 8-BIT SPDT GIGABIT LAN SWITCH WITH LED SWITCH www.ti.com SCDS251 – MARCH 2008 FEATURES 1 28 29 31 30 32 34 33 A0 VCC LED2 2LED1 2LED2 0B1 1B1 0B2 1B2 36 35 20 9 19 18 21 8 17 22 7 16 23 6 15 24 5 14 25 4 12 3 SEL 2B1 3B1 2B2 3B2 4B1 5B1


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    PDF TS3L4892 16-BIT SCDS251 000-V A114-B, TK4892

    TK4892

    Abstract: TS3L4892RHHR C101 A4821
    Text: TS3L4892 16-BIT TO 8-BIT SPDT GIGABIT LAN SWITCH WITH LED SWITCH www.ti.com SCDS251 – MARCH 2008 FEATURES 1 28 29 31 30 32 34 33 A0 VCC LED2 2LED1 2LED2 0B1 1B1 0B2 1B2 36 35 20 9 19 18 21 8 17 22 7 16 23 6 15 24 5 14 25 4 12 3 SEL 2B1 3B1 2B2 3B2 4B1 5B1


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    PDF TS3L4892 16-BIT SCDS251 TK4892 TS3L4892RHHR C101 A4821

    TK4892

    Abstract: TS3L4892RHHR
    Text: TS3L4892 16-BIT TO 8-BIT SPDT GIGABIT LAN SWITCH WITH LED SWITCH www.ti.com SCDS251 – MARCH 2008 FEATURES 1 28 29 31 30 32 34 33 A0 VCC LED2 2LED1 2LED2 0B1 1B1 0B2 1B2 36 35 20 9 19 18 21 8 17 22 7 16 23 6 15 24 5 14 25 4 12 3 SEL 2B1 3B1 2B2 3B2 4B1 5B1


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    PDF TS3L4892 16-BIT SCDS251 000-V A114-B, TK4892 TS3L4892RHHR

    TK4892

    Abstract: RHH package
    Text: TS3L4892 16-BIT TO 8-BIT SPDT GIGABIT LAN SWITCH WITH LED SWITCH www.ti.com SCDS251 – MARCH 2008 FEATURES 1 28 29 31 30 32 34 33 A0 VCC LED2 2LED1 2LED2 0B1 1B1 0B2 1B2 36 35 20 9 19 18 21 8 17 22 7 16 23 6 15 24 5 14 25 4 12 3 SEL 2B1 3B1 2B2 3B2 4B1 5B1


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    PDF TS3L4892 16-BIT SCDS251 000-V A114-B, TK4892 RHH package

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCP 54 . BCP 56 NPN Silicon AF Transistors • • • • For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCR 51 . BCP 53 PNP Type Marking Ordering Code (tape and reel) Pin Configuration


    OCR Scan
    PDF Q62702-C2117 Q62702-C2119 Q62702-C2120 Q62702-C2148 Q62702-C2122 Q62702-C2123 Q62702-C2149 Q62702-C2125 Q62702-C2106 OT-223