MARKING 5B1 Search Results
MARKING 5B1 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
5962-8950303GC |
![]() |
ICM7555M - Dual Marked (ICM7555MTV/883) |
![]() |
![]() |
|
MG80C186-10/BZA |
![]() |
80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
![]() |
![]() |
|
54ACT244/B2A |
![]() |
54ACT244/B2A - Dual marked (5962-8776001B2A) |
![]() |
![]() |
|
ICM7555MTV/883 |
![]() |
ICM7555MTV/883 - Dual marked (5962-8950303GA) |
![]() |
![]() |
|
MQ80186-8/BYC |
![]() |
80186 - Microprocessor, 16-Bit - Dual marked (8501001YC) |
![]() |
![]() |
MARKING 5B1 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
5B1 SOT23
Abstract: 5B1 SOT-23 sot23 marking 5c1 marking 5b1
|
Original |
LBC807-16LT1 LBC807-16LT1G OT-23 LBC807-40LT1 LBC807-40LT1G LBC807-25LT1 LBC807-25LT1G 5B1 SOT23 5B1 SOT-23 sot23 marking 5c1 marking 5b1 | |
marking 6a2 smd
Abstract: zener Z11B
|
Original |
500mW 94Leakage marking 6a2 smd zener Z11B | |
Contextual Info: SIEMENS BCP 54 . BCP 56 NPN Silicon AF Transistors • • • • For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCR 51 . BCP 53 PNP Type Marking Ordering Code (tape and reel) Pin Configuration |
OCR Scan |
Q62702-C2117 Q62702-C2119 Q62702-C2120 Q62702-C2148 Q62702-C2122 Q62702-C2123 Q62702-C2149 Q62702-C2125 Q62702-C2106 OT-223 | |
BC807-40
Abstract: 5B1 SOT-23 BC807-16 BC807-25
|
Original |
BC807-16/ BC807-25 BC807-40 OT-23 BC807-16/BC807-25 OT-23 BC807-40 5B1 SOT-23 BC807-16 BC807-25 | |
TK4892Contextual Info: TS3L4892 16-BIT TO 8-BIT SPDT GIGABIT LAN SWITCH WITH LED SWITCH www.ti.com SCDS251 – MARCH 2008 FEATURES 1 28 29 31 30 32 34 33 A0 VCC LED2 2LED1 2LED2 0B1 1B1 0B2 1B2 36 35 20 9 19 18 21 8 17 22 7 16 23 6 15 24 5 14 25 4 12 3 SEL 2B1 3B1 2B2 3B2 4B1 5B1 |
Original |
TS3L4892 16-BIT SCDS251 000-V A114-B, TK4892 | |
Contextual Info: TS3L4892 16-BIT TO 8-BIT SPDT GIGABIT LAN SWITCH WITH LED SWITCH www.ti.com SCDS251 – MARCH 2008 FEATURES 1 28 29 31 30 32 34 33 A0 VCC LED2 2LED1 2LED2 0B1 1B1 0B2 1B2 36 35 20 9 19 18 21 8 17 22 7 16 23 6 15 24 5 14 25 4 12 3 SEL 2B1 3B1 2B2 3B2 4B1 5B1 |
Original |
TS3L4892 16-BIT SCDS251 | |
IPB065N15N3
Abstract: 5F040 ED 05 Diode marking EB5
|
Original |
IPB065N15N3 7865AE5 5F040 ED 05 Diode marking EB5 | |
Contextual Info: IPB027N10N3 G 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H ( J R 9H"[Z#$YMd *&/ Y I9 )*( 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T?@5B1D9>7D5=@5B1DEB5 |
Original |
IPB027N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à | |
Contextual Info: BSC360N15NS3 G 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H -( J R 9H"[Z#$YMd +. Y I9 + 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T?@5B1D9>7D5=@5B1DEB5 |
Original |
BSC360N15NS3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à | |
Contextual Info: IPA075N15N3 G Ie\Q TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y I9 ,+ 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T?@5B1D9>7D5=@5B1DEB5 Q)2 6B55<514@<1D9>7+?",3?=@<91>D |
Original |
IPA075N15N3 D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à | |
Contextual Info: IPD122N10N3 G TM 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H ( J R ,?>=1H )*&* Y I -1 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T?@5B1D9>7D5=@5B1DEB5 |
Original |
IPD122N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à | |
Contextual Info: IPA086N10N3 G TM 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H ( J R ,?>=1H 0&. Y I9 ,- 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T?@5B1D9>7D5=@5B1DEB5 |
Original |
IPA086N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à | |
CCD MARKINGContextual Info: IPA075N15N3 G Ie\Q "%&$!"#TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y" I9 ,+ 6 Q . 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5 Q ) 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9 1>D Q * E1<96954 13 3 ? B49>7 D? $ |
Original |
IPA075N15N3 CCD MARKING | |
marking 9D
Abstract: marking eb5 diode 1D marking g9 55B5 7865a DIODE Z6 Diode 9H DIODE ED 99 package marking 5f
|
Original |
IPA086N10N3 7865AE5 marking 9D marking eb5 diode 1D marking g9 55B5 7865a DIODE Z6 Diode 9H DIODE ED 99 package marking 5f | |
|
|||
marking EB5
Abstract: diode marking eb5 marking G9
|
Original |
IPD122N10N3 7865AE5 marking EB5 diode marking eb5 marking G9 | |
Q451
Abstract: 95B9 C19B marking EB5 d91d package marking 5f
|
Original |
IPD180N10N3 7865AE5 Q451 95B9 C19B marking EB5 d91d package marking 5f | |
IPD320N20N3
Abstract: marking EB5
|
Original |
IPD320N20N3 7865AE5 marking EB5 | |
IPD600N25N3 GContextual Info: IPD600N25N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *-( J R 9H"[Z#$YMd .( Y" I9 *- 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5 |
Original |
IPD600N25N3 7865AE5 IPD600N25N3 G | |
IPB027N10N3
Abstract: marking 1D 55B5 Q451 EB5 MARKING marking G9
|
Original |
IPB027N10N3 7865AE5 marking 1D 55B5 Q451 EB5 MARKING marking G9 | |
Samsung Electro-Mechanics
Abstract: HP8920A marking D9 diode phase*detector ru2475b18haa ND15
|
Original |
||
TK4892Contextual Info: TS3L4892 16-BIT TO 8-BIT SPDT GIGABIT LAN SWITCH WITH LED SWITCH www.ti.com SCDS251 – MARCH 2008 FEATURES 1 28 29 31 30 32 34 33 A0 VCC LED2 2LED1 2LED2 0B1 1B1 0B2 1B2 36 35 20 9 19 18 21 8 17 22 7 16 23 6 15 24 5 14 25 4 12 3 SEL 2B1 3B1 2B2 3B2 4B1 5B1 |
Original |
TS3L4892 16-BIT SCDS251 000-V A114-B, TK4892 | |
TK4892
Abstract: TS3L4892RHHR C101 A4821
|
Original |
TS3L4892 16-BIT SCDS251 TK4892 TS3L4892RHHR C101 A4821 | |
TK4892
Abstract: TS3L4892RHHR
|
Original |
TS3L4892 16-BIT SCDS251 000-V A114-B, TK4892 TS3L4892RHHR | |
TK4892
Abstract: RHH package
|
Original |
TS3L4892 16-BIT SCDS251 000-V A114-B, TK4892 RHH package |