MARKING A1 6 Search Results

marking a1

Abstract: KDZ27V A101 marking 1p marking A1 6
Contextual Info: SEMICONDUCTOR KDZ27V MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking A1 0 1 2 1 No. Item Marking Description Device Mark A1 KDZ27V hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

sod-23

Abstract: diode sod23 SOD 23 marking a7 SOD23 marking A4 marking A1 diode marking a4 MARKING A4 transistor SILICON SWITCHING DIODE
Contextual Info: BAV70 SWITCHING DIODE PRODUCT SUMMARY SOT-23 SOD-23 Plastic-Encapsulate Diodes FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance BAW56 Marking: A1 BAV70 Marking: A4 BAV99 Marking: A7 Pb-free; RoHS-compliant MAXIMUM RATINGS @TA=25°C

diode 4148

Abstract: DIODE-4148 A4 marking diode diode MARKING CODE 5d marking A4 marking A7 marking codes sot-23 A4 4148CA 4148SE diode 4148 sot-23
Contextual Info: MMBD4148 / SE / CC / CA SURFACE MOUNT SWITCHING DIODE 4148 4148SE 3 1 4148CC 3 3 2 1 1 2 2 4148CA 3 1 MMBD4148 Marking Code: 5D MMBD4148SE Marking Code: A7 MMBD4148CC Marking Code: A4 MMBD4148CA Marking Code: A1 SOT-23 Plastic Package 2 Absolute Maximum Ratings Ta = 25 OC

schottky diode marking A7

Abstract: diode ba 241 marking A7 diode schottky ba 662 diode ba 204 BAV70 ON MARKING 358 sot-23 Diode bav99 case MARKING A1 diode bav70
Contextual Info: BA- Series Features: • • • • Fast switching speed. Surface mount package ideally suited for automatic insertion. For general purpose switching applications. High conductance. SOT-23 Dimensions : Inches Millimetres BAW56 Marking: A1 BAV99 Marking: A7

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAW56/BAV70/BAV99 SOT-23 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance BAW56 Marking: A1 BAV70 Marking: A4

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAW56/BAV70/BAV99 SOT-23 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance BAW56 Marking: A1 BAV70 Marking: A4

Part Marking Information

Contextual Info: Part Marking Information www.vishay.com Vishay Siliconix WCSP6 2 x 3 Array 1 2 A W AC B C Row 1 Dot = Pin A1 Locator Row 2 W Row 3 AC = Part Code = Week Code The current marking strategy is reflected. Contact your local sales representative for historical marking strategies for these

marking a7

Abstract: marking a1 marking A4 BAV99 BAW56 A7 marking bav99 marking Diode BAV99 SOT23 A4 marking diode diode bav70
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAW56/BAV70/BAV99 SOT-23 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance BAW56 Marking: A1 BAV70 Marking: A4

tokin 473 5.5v

Abstract: 0,10f, 5,5v, nec tokin 0,047F 5.5v FM0H103ZF FM0H224ZF 5.5v 0.047f 25 fmr 160 FME0H473ZF FMR0V104ZF FM0V224ZF
Contextual Info: 6.2 FM Series Dimensions 10.5±0.5 T±0.5 11.5±0.5 0.4±0.1 5±1 0.5±0.1 0.4±0.1 5±0.5 （Unit：mm） Markings Negative polarity identification NT MAX operating voltage Nominal capacitance 5.5V – 473 A1 + E E ：FME type marking L ：FML type marking

BAV99U

Abstract: SC74
Contextual Info: BAV99U Silicon Switching Diode Array • For high-speed switching applications 5 4 6 • Connected in series • Internal galvanic isolated diodes 3 in one package C1/A2 C2 A1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV99U A7s

BAV99S

Abstract: VPS05604
Contextual Info: BAV99S Silicon Switching Diode Array 4 • For high-speed switching applications 5 6 • Connected in series • Internal galvanic isolated diodes in one package C1/A2 C2 A1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV99S A7s

BAW56U

Abstract: SC74
Contextual Info: BAW56U Silicon Switching Diode Array • For high-speed switching applications 5 4 6 • Common anode • Internal galvanic isolated diode arrays 3 in one package A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56U A1s Pin Configuration

6A1 diode

Abstract: BAW56S VPS05604
Contextual Info: BAW 56S Silicon Switching Diode Array 4 • For high-speed switching applications 5 6 • Common anode • Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56S A1s

BAV70U

Abstract: SC74 10325v
Contextual Info: BAV70U Silicon Switching Diode Array 5
For high-speed switching applications 4 6
Internal galvanic isolated diode arrays in one package 3
Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV70U A4s Pin Configuration

MMBZ5221BS

Abstract: MMBZ5223BS MMBZ5225BS MMBZ5226BS MMBZ5227BS MMBZ5228BS MMBZ5229BS MMBZ5259BS KE2 diode ZENER A2.2
Contextual Info: MMBZ5221BS - MMBZ5259BS 200mW SURFACE MOUNT ZENER DIODE Features SOT-363 A A1 KXX Mechanical Data • · · · · C1 Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: KXX: Part marking See table page 2

EHA07182

Abstract: BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2
Contextual Info: BAV 70S Silicon Switching Diode Array 4 5 • For high-speed switching applications 6 • Internal galvanic isolated diode arrays in one package • Common cathode 2 3 1 VPS05604 C1/C2 A2 6 5 A1 4 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70S A4s

BAW56S

Abstract: 6A1 diode VPS05604
Contextual Info: BAW56S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Common anode
Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56S A1s Pin Configuration

6A1 diode

Abstract: 7006S VPS05604
Contextual Info: BAS 70-06S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 6 • Circuit protection • Voltage clamping • High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking

Contextual Info: BAV 70U Silicon Switching Diode Array 5
For high-speed switching applications 4 6
Internal galvanic isolated diode arrays in one package 3
Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70U A4s Pin Configuration

BAV99V

Contextual Info: BAV 99U Silicon Switching Diode Array
For high-speed switching applications 5 4 6
Connected in series
Internal galvanic isolated diodes in one package 3 C1/A2 C2 A1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV 99U A7s Pin Configuration

6A1 diode

Abstract: BAS70-06S VPS05604
Contextual Info: BAS70-06S Silicon Schottky Diode Array 4
General-purpose diode for high-speed switching 5 6
Circuit protection
Voltage clamping
High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAS70-06S

VPS05604

Abstract: A7s marking diode
Contextual Info: BAV 99S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Connected in series
Internal galvanic isolated diodes in one package C1/A2 C2 A1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV 99S A7s Pin Configuration

6A1 diode

Contextual Info: BAW 56U Silicon Switching Diode Array
For high-speed switching applications 5 4 6
Common anode
Internal galvanic isolated diode arrays in one package 3 A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56U A1s Pin Configuration

marking 6c1

Abstract: BAS16U SC74
Contextual Info: BAS16U Silicon Switching Diode Array 5
For high-speed switching applications 4 6
Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74