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    MARKING A2J Search Results

    MARKING A2J Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING A2J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING A2J

    Abstract: NCMA10 marking code CAP ceramic axial capacitors 200-VDC NCM15NPO100J200 NCMA10N NCMA10NPO330J200TR
    Text: 7/15/99 70 Maxess Road ! Melville, New York 11747 631 936-7500 ! Fax (631) 396-7575 COMPONENT MARKING PRODUCTS: RADIAL LEADED MLC CERAMIC CAPACITORS SERIES: NCM Cap Tol. C = +/-.25pF D = +/-.5pF F = +/-1% G = +/-2% J = +/-5% Cap Value 100 = 10pF Dielectric


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    PDF 100VDC 200VDC 50VDC NCM15NPO100J200 MARKING A2J NCMA10 marking code CAP ceramic axial capacitors 200-VDC NCM15NPO100J200 NCMA10N NCMA10NPO330J200TR

    Untitled

    Abstract: No abstract text available
    Text: 050-501 Copper to Fiber Aggregation Media Converter Flange Mount 12 Channel RS422/RS485, 28VDC, Mighty Mouse Signal & Power , GHD (Fiber Optic) REV 2 DESCRIPTION DATE 1/19/2015 APPROVED BD THIS COPYRIGHTED DOCUMENT IS THE PROPERTY OF GLENAIR, INC. AND IS FURNISHED ON THE CONDITION THAT IT IS NOT TO


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    PDF RS422/RS485, 28VDC, RS422/485

    KR15S018M

    Abstract: KR15S025M KR15S026M KR15S027M
    Text: SEMICONDUCTOR TECHNICAL DATA KR15S018M~KR15S033M BIPOLAR LINEAR INTEGRATED CIRCUIT 150mA POWER LOW DROPOUT REGULATOR E The KR15SXXXM is an efficient linear voltage regulator with very low B dropout voltage Typically 10mV at light loads and 165mV at 175mA


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    PDF KR15S018M KR15S033M 150mA KR15SXXXM 165mV 175mA) 175mV 150mA) 100mA KR15S025M KR15S026M KR15S027M

    Marking A18

    Abstract: marking a2J KR15S028 10K 103
    Text: SEMICONDUCTOR TECHNICAL DATA KR15S018M~KR15S033M BIPOLAR LINEAR INTEGRATED CIRCUIT 150mA POWER LOW DROPOUT REGULATOR E The KR15SXXXM is an efficient linear voltage regulator with very low B dropout voltage Typically 10mV at light loads and 165mV at 175mA


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    PDF 150mA KR15SXXXM 165mV 175mA) KR15S018M KR15S033M 100mA 100mA 100pF Marking A18 marking a2J KR15S028 10K 103

    marking B2J

    Abstract: AIC1747 AIC1747-18PV5TR AIC1747-18PX3ATR AIC1747-XXXXX SC70-5 TSOT23 TSOT23-5 LDO MARKING E.2 sc70-5 marking a2j* SOT23-5
    Text: AIC1747 300mA Linear Regulator With Bypass Pin FEATURES DESCRIPTION AIC1747 is optimized for low ESR ceramic capacitor operation with 300mA continuous current. The AIC1747 is designed for portable RF and wireless applications with demanding performance and space requirements.


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    PDF AIC1747 300mA AIC1747 Current80 5M-1994. marking B2J AIC1747-18PV5TR AIC1747-18PX3ATR AIC1747-XXXXX SC70-5 TSOT23 TSOT23-5 LDO MARKING E.2 sc70-5 marking a2j* SOT23-5

    aic1747

    Abstract: FA2J marking a2j* SOT23-5 AIC1747-18PV5TR 2.GND 4.NC sot-23 5pin a2j 5-PIN a2j* SOT23-5 FFxxG AIC1747-XXXXX AIC1747-285GJ3
    Text: AIC1747 300mA Linear Regulator With Bypass Pin FEATURES DESCRIPTION AIC1747 is optimized for low ESR ceramic capacitor operation with 300mA continuous current. The AIC1747 is designed for portable RF and wireless applications with demanding performance and space requirements.


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    PDF AIC1747 300mA AIC1747 Current80 5M-1994. FA2J marking a2j* SOT23-5 AIC1747-18PV5TR 2.GND 4.NC sot-23 5pin a2j 5-PIN a2j* SOT23-5 FFxxG AIC1747-XXXXX AIC1747-285GJ3

    AIC1747-XXXX

    Abstract: No abstract text available
    Text: AIC1747 300mA Linear Regulator With Bypass Pin FEATURES DESCRIPTION AIC1747 is optimized for low ESR ceramic capacitor operation with 300mA continuous current. The AIC1747 is designed for portable RF and wireless applications with demanding performance and space requirements.


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    PDF AIC1747 300mA AIC1747 4991-M5 AIC1747-XXXX

    AIC1747

    Abstract: AIC1747-18GV5TR FA-2J AIC1747-XXXXX 3l Marking sot-23-5 AIC1747-18GV5 marking a2j* SOT23-5 marking k5 sot89 sot-25 u3 marking J3 SOT23-5
    Text: AIC1747 300mA Linear Regulator With Bypass Pin „ FEATURES „ DESCRIPTION z Guarantee 300mA Output Current. z Fast Response in Line/Load Transient z Wide Operating Voltage Ranges: 2.0V to 6.0V. z 0.01 A Shutdown Standby Current z Low Quiescent Current:80µA.


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    PDF AIC1747 300mA AIC1747 Current80 AIC1747-18GV5TR FA-2J AIC1747-XXXXX 3l Marking sot-23-5 AIC1747-18GV5 marking a2j* SOT23-5 marking k5 sot89 sot-25 u3 marking J3 SOT23-5

    marking B2J

    Abstract: marking C2H 3PIN MARKING A2J sot23 A2h
    Text: FM6326/FM6327/FM6328 Ultra low current µC Supervisor Circuits Features General Description • ■ ■ ■ ■ ■ FM6326/FM6327/FM6328 are a family of supervisory circuits employed to monitor power supplies used in Microprocessor, Microcontroller and other digital systems. These devices accurately monitor the system voltage VCC and signal reset to the


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    PDF FM6326/FM6327/FM6328 FM6326/FM6327/FM6328 100ms marking B2J marking C2H 3PIN MARKING A2J sot23 A2h

    709 series K Allen-Bradley Starter

    Abstract: Allen-Bradley auxiliary contact 595-A Allen-Bradley starter 709 A2JD Allen-Bradley auxiliary contact 595-AB westinghouse contactor 195-FA11 interposing relay 196-fta smp1 OVERLOAD RELAY
    Text: Bulletin 509 NEMA Full Voltage Starters Bulletin 509 D Broad Range of NEMA Sizes 00–9 D Exceptional Electrical Life D UL Certified Type 2 Coordination D Dependable Coil Operation D Cost Saving Design D SMP–1 or SMP–3 Solid-State Overload Relays


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    Untitled

    Abstract: No abstract text available
    Text: 7 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION 6 5 - , N/A ALL RIGHTS RESERVED. A A A 849581-1 — — — 849581-2 3A6A3P3 M/W B 226-A3J3 D8206 9 7 94 2 —582R371H01 0 0 779 DATE CODE W2908 3A5A2P3 M/W B225-A2J3 D8207 849581-3 — — — 3A6A3P3


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    PDF 226-A3J3 D8206 582R371H01 W2908 B225-A2J3 D8207 B226-A3J3 D8208 B225-A3J3

    6539B

    Abstract: No abstract text available
    Text: Zu SGS-THOMSON BYT 230 PI V -1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SW ITCHING LOSSES LOW NOISE TURN-OFF SW ITCHING INSULATED : Capacitance 45pF A2J Insu la tin g v o lta g e : 2 5 0 0 V r m s


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    PDF

    transistor marking 1JA

    Abstract: A2JA 24G02
    Text: Table of Contents F e a tu re s. Pin A ssignm ent. Pin F unctions.


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    PDF S-24C01A/02A/04A transistor marking 1JA A2JA 24G02

    UA 471 CN

    Abstract: No abstract text available
    Text: CONDENSATEURS CERAMIQUE MQULES CLASSE 2 MOLDED CERAM IC CAPACITORS CLASS 2 TCN 61.62.63.64 L. ± 0,5 h m ax. e ± 0.2 ± U,2 0,2 :X A T. M odels norm aXiSQ /Standard m o d e l CN 64 CN 61 1 CN 61 N 1 CN 62 ! CN 62 N i CN 63 A ppellation com m erciale/C o m m er c ia l tvpe


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    PDF 0V-63 100000MQ UA 471 CN

    RIFA PEG112-PQ-310

    Abstract: No abstract text available
    Text: INTERFERENCE SUPPRESSORS PHE 800 Metallized Polyester PHE 800 • • A pproved acc. to French standard LNZ 4404A S elf-extinguishing encapsulation Series winding construction Application Basic design The capacitors are intended fo r use as interference suppressors in X2 applica­


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    PDF factorF7100M 2-4670-1023/A2J VDE0565 40-7/VI-1980 RIFA PEG112-PQ-310

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3607 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC36Q7 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. U nit in mm i .e MAX. 4.6 M A X . • Low Noise Figure, High Gain. Q 4±ao 5 1.7 MAX. _E NF = l.ld B , |S2 ie l2= 9.5d B f= lG H z


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    PDF 2SC3607 2SC36Q7 --j50

    SM2Z200

    Abstract: SM2Z5V1 SM2Z5V6 SM2Z10 Marking ZHW SM2Z6V2 SM2Z12 marking fm stm sm2z
    Text: SM2Z5V1 / SM2Z200 2W ZENER DIODES FEATURES . VOLTAGE RANGE: 5.1 Vto 200V . SMAPACKAGE • HIGH SURGE CAPABILITY: 40 W 10 ms DESCRIPTION - 2 W Zener diodes - Tinned copper leads. - Full compatibility with both gluing and paste soldering techniques. ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)


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    PDF SM2Z200 SM2Z200 SM2Z5V1 SM2Z5V6 SM2Z10 Marking ZHW SM2Z6V2 SM2Z12 marking fm stm sm2z

    Untitled

    Abstract: No abstract text available
    Text: S M B Y W 0 4 -2 0 0 B YW 4200B _ HIGH EFFICIEN CY FAST RECO VERY DIODE MAIN PRODUCT CHARACTERISTICS I f a v 4A V rrm 200 V V f (max) 0.85 V Tj (max) 150 °C FEATURES AND BENEFITS • ■ ■ ■ ■ SUITED TO SMPS AND DRIVES SURFACE MOUNT PACKAGE


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    PDF 4200B BYW4200B DO-214AB) SMBYW04-200

    Untitled

    Abstract: No abstract text available
    Text: Te lec o m S tandard P roduct P I | \ / | £ I / P M C -S ierra, Inc. l \ a PRELIMINARY INFORMATION PM 5361 TU PP SONET/SDH TRIBUTARY UNITPA YLOAD PROCESSOR FE A TU R E S • A configurable, multi-channel, payload processor for alignment of SONET virtual tributaries VTs or SDH tributary units (TUs). Processes an STS-3 or STM-1 byte


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    PDF 920526P5 920102P6

    68hc11a1

    Abstract: MT02B 5962-90510 TS68HC11A1MC CQFP52
    Text: O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX TS 68HC11A1 HCMOS 8-BIT MICROCONTROLLER UNIT DESCRIPTION The TS 68HC11A1 high density CMOS HCMOS m icrocon­ troller unit (MCU) contains highly sophisticated on*chip peri­ pheral capabilities. This high-speed and low-power MCU


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    PDF 68HC11A1 68HC11A1 16-bit TS68HC11A1MC8B/Y TS68HC11A1MF8B/Y TS68HC11A1MC1 TS68HC11A1MF1 TS68HC11A1DESxC TS68HC11A1DESxC TS68HC11A1VC MT02B 5962-90510 TS68HC11A1MC CQFP52

    d432937

    Abstract: TRANSISTOR MARKING A33 MXXXXX O-I/025
    Text: DATA SHEET_ NEC MOS INTEGRATED CIRCUIT UPD432937 2M-BIT CMOS SYNCHRONOUS FAST SRAM 64K-WORD BY 36-BIT PIPELINED OPERATION / HSTL INTERFACE Description The ,uPD432937 is a 65,536-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology


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    PDF PD432937 64K-WORD 36-BIT PD432937 536-word uPD432937 uPD432937GF 100-pin d432937 TRANSISTOR MARKING A33 MXXXXX O-I/025

    d432937

    Abstract: No abstract text available
    Text: DATA SHEET_ NEC MOS INTEGRATED CIRCUIT UPD432937 2M-BIT CMOS SYNCHRONOUS FAST SRAM 64K-WORD BY 36-BIT PIPELINED OPERATION / HSTL INTERFACE Description The ,uPD432937 is a 65,536-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology


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    PDF UPD432937 64K-WORD 36-BIT uPD432937 536-word 36-bit S100GF-65-8ET-1 M14018EJ2V0DS00 d432937

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4382162,4382182,4382322,4382362 8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION Description The ¿¡PD4382162 is a 524,288-word by 16-bit, the ¿¡PD4382182 is a 524,288-word by 18-bit, ¿¡PD4382322 is a 262,144-word by 32-bit and the ^¡PD4382362 is a 262,144-word by 36-bit synchronous static RAM fabricated with


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    PDF PD4382162 288-word 16-bit, PD4382182 18-bit, PD4382322 144-word 32-bit

    intel PLD

    Abstract: No abstract text available
    Text: INTEL CORP UP/PRPHLS . • i n t g MME D ■ - . MÔSbl75 0101313 5 I ■ ITLl ' p ftg y o m M ? l " P i - 6 - 1^ - 27960CX PIPELINED BURST ACCESS 1M (128K x 8) CHMOS EPROM Pipelined Addressing fo r Optimal Bus Bandwidth on 80960CA — N ext Addressing Overlaps Last Data


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    PDF Sbl75 27960CX 80960CA 27960CX 01G1335 G1G1333 intel PLD