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    MARKING AL PNP Search Results

    MARKING AL PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    MARKING AL PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V  Case: SOT89  IC = -1A Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM = -1.5A Peak Pulse Current


    Original     		PDF BCX51/ -500mV BCX54, AEC-Q101 DS35368

    Untitled

    Abstract: No abstract text available
    Text: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • IC = -1A Continuous Collector Currnet  Case: SOT89  Low Saturation Voltage VCE sat < -500mV @ -0.5A  Case Material: Molded Plastic, “Green” Molding Compound 


    Original     		PDF BCX51/ -500mV J-STD-020 BCX54, MIL-STD-202 DS35368

    Untitled

    Abstract: No abstract text available
    Text: BCX 51 / 52 / 53 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 Mechanical Data Features • • • • • • • • IC = -1A Continuous Collector Current Low Saturation Voltage VCE sat < -500mV @ -0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction


    Original     		PDF -500mV BCX54, AEC-Q101 J-STD-020 DS35368

    BCX5316TA

    Abstract: BCX53-16 BCX54 marking AL sot89 bcx51-16t bcx5316t
    Text: BCX 51 / 52 / 53 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 Features • • • • • • • • Mechanical Data IC = -1A Continuous Collector Current Low Saturation Voltage VCE sat < -500mV @ -0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction


    Original     		PDF -500mV BCX54, AEC-Q101 J-STD-020 DS35368 BCX5316TA BCX53-16 BCX54 marking AL sot89 bcx51-16t bcx5316t

    BCX5216QTA

    Abstract: No abstract text available
    Text: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • IC = -1A Continuous Collector Currnet  Case: SOT89  Low Saturation Voltage VCE SAT < -500mV @ -0.5A  Case Material: Molded Plastic, “Green” Molding Compound 


    Original     		PDF BCX51/ -500mV J-STD-020 BCX54, MIL-STD-202 DS35368 BCX5216QTA

    AM/mcl d01 94V0

    Abstract: No abstract text available
    Text: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V  Case: SOT89  IC = -1A Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM = -1.5A Peak Pulse Current


    Original     		PDF BCX51/ -500mV J-STD-020 BCX54, MIL-STD-202 DS35368 AM/mcl d01 94V0

    transistor bc 318

    Abstract: TRANSISTOR BC 321 transistor bc 325 TRANSISTOR BC 135 bc516 BC517 TRANSISTOR BC C944 Q62702-C944 transistor bc 517
    Text: PNP Silicon Darlington Transistor BC 516 High current gain ● High collector current ● Complementary type: BC 517 NPN ● 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 516 – Q62702-C944 C TO-92 B E Maximum Ratings Parameter Symbol


    Original     		PDF Q62702-C944 transistor bc 318 TRANSISTOR BC 321 transistor bc 325 TRANSISTOR BC 135 bc516 BC517 TRANSISTOR BC C944 Q62702-C944 transistor bc 517

    T 3036

    Abstract: bel transistor 1041 B SAQ marking 2N23 2N2377 S19C T3036
    Text: MlL-S-l 9500/288 24 Apdl 1964 MILITARY EL SPECIFICATION TRANSISTOR, PNP, SILICON TYPE 2N2377 . 1. SCOPE . i’ .- This specification *is~*l.dlo4mdo-ky~qmplifl&ciK.i~. 1.2 Outline and dlmemioru. - 1.3 Particular electrical coven the de?ajl requirem&ts “o,


    Original     		PDF 2N2377 MIL-S-19SCW288 MIL-s-19500/288 T 3036 bel transistor 1041 B SAQ marking 2N23 2N2377 S19C T3036

    BCX53

    Abstract: marking AE BCX52 BCX51 smd marking AA SMD iC MARKING AG SMD iC MARKING AE BCX53 SMD SMD AK BCX52-16
    Text: Transistors SMD Type PNP Medium Power Transistors BCX51,BCX52,BCX53 Features High current max. 1 A . Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Symbol Rating Unit VCBO -45 V BCX52 -60


    Original     		PDF BCX51 BCX52 BCX53 BCX52 BCX51 BCX51-16 BCX53 marking AE smd marking AA SMD iC MARKING AG SMD iC MARKING AE BCX53 SMD SMD AK BCX52-16

    transistor marking code AL

    Abstract: transistor marking code ak BCX51 PNP TRANSISTOR "SOT89" marking aa
    Text: Central BCX51 BCX52 BCX53 Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX51, BCX52, and BCX53 types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount


    Original     		PDF BCX51 BCX52 BCX53 BCX51, BCX52, OT-89 transistor marking code AL transistor marking code ak PNP TRANSISTOR "SOT89" marking aa

    Untitled

    Abstract: No abstract text available
    Text: BCX5316Q 80V PNP MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Case: SOT89  Case Material: Molded Plastic, “Green” Molding Compound


    Original     		PDF BCX5316Q J-STD-020 MIL-STD-202 -500mV DS37033

    marking al

    Abstract: 200a smd 2sA1766
    Text: Transistors IC SMD Type PNP Epitaxial Planar Silicon 2SA1766 Features Adoption of FBET, MBIT processes. High DC current gain hFE=500 to 1200 . Large current capacity. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SA1766 -10mA -200mA -200A marking al 200a smd 2sA1766

    hFE-1000 BC

    Abstract: C943 bc879 c942 bc 384 b bc 877 bc 390 C853 bc877 876 pin
    Text: NPN Silicon Darlington Transistors BC 875 … BC 879 High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 876, BC 878 BC 880 PNP ● 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 875 BC 877 BC 879


    Original     		PDF C62702-C853 C62702-C854 C62702-C855 hFE-1000 BC C943 bc879 c942 bc 384 b bc 877 bc 390 C853 bc877 876 pin

    bcx53

    Abstract: transistor marking code AL BCX51 PNP TRANSISTOR "SOT89" marking aa
    Text: BCX51 BCX52 BCX53 SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX51, BCX52, and BCX53 types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high


    Original     		PDF BCX51 BCX52 BCX53 BCX51, BCX52, OT-89 BCX52) BCX53) transistor marking code AL PNP TRANSISTOR "SOT89" marking aa

    SOT89 marking cec

    Abstract: PNP TRANSISTOR SOT89 MARKING 93 SOT89 sot89 marking 93 marking chc SOT89 BC868 BC869 BC869-16 BC869-25
    Text: Philips Sem iconductors Product specification PNP medium power transistor BC869 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 em itter 2 collector 3 base • Low voltage, high current LF applications.


    OCR Scan     		PDF BC869 BC868. BC869 BC869-16 BC869-25 SOT89 marking cec PNP TRANSISTOR SOT89 MARKING 93 SOT89 sot89 marking 93 marking chc SOT89 BC868

    transistor marking code AL

    Abstract: TRANSISTOR marking code 432 AL 102 pnp transistor A 673 transistor DPAK marking code 300
    Text: Central" CJD340 NPN CJD350 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD340, CJD350 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high voltage general pur­


    OCR Scan     		PDF CJD340 CJD350 CJD340, 26-September transistor marking code AL TRANSISTOR marking code 432 AL 102 pnp transistor A 673 transistor DPAK marking code 300

    marking 0a

    Abstract: mun5111dw1t1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M UN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network M otorola Preferred D evices The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    OCR Scan     		PDF MUN5111DW1T1 OT-363 MUN5114DW1T1 11DW1T1 MUN5115DW1T1 UN5116DW marking 0a

    2N1025

    Abstract: 2N1026 2N1469 CU10A 2N1026 JAN 2N146 vqb 71
    Text: MIL -S - 195GG/78C 17 Mirth 1971 SUPERSEDING «»»» o «A iA A /nen J V liiJ-O “ ¿»O U U / IO D 10 February 1902 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N1025, 2N1028 AND 2N1469 This specification Is mandatory for use by all Departments and Agencies of the Department of Defense.


    OCR Scan     		PDF MIL-5-19500/78C MIL-S-19500/78B 2N1025, 2N1026 2N1469 2N1025 2N1469 CU10A 2N1026 JAN 2N146 vqb 71

    marking 51 sot223

    Abstract: bsp52
    Text: BSP 50. BSP 52 NPN Silicon Darlington Transistors • High collector current • Low collect or -emitter saturation voltage • Complementary types: BSP 60.BSP 62 PNP Type Marking Ordering code (12-mm tape ) Package* BSP 50 BSP 50 Q62702- P1163 SOT-223


    OCR Scan     		PDF 12-mm Q62702- P1163 Q62702 P1164 OT-223 OT-223 BSP52 300ps; marking 51 sot223

    marking code ED

    Abstract: high voltage pnp transistor bcv48
    Text: Philips Semiconductors Product specification PNP Darlington transistors BCV28; BCV48 FEATURES PINNING • Very high DC current gain min. 10000 PIN DESCRIPTION • High current (max. 500 mA) 1 em itter • Low voltage (max. 60 V). 2 collector 3 base APPLICATIONS


    OCR Scan     		PDF BCV28; BCV48 BCV29 BCV49. BCV28 marking code ED high voltage pnp transistor bcv48

    Untitled

    Abstract: No abstract text available
    Text: 32E I • Ô23fc.320 001707Ô IS IP BSP 60. BSP 62 PNP Silicon Darlington Transistors SIEMENS/ SPCLi SEMICONDS T - 3 3 « • High collector current • Low collector -emitter saturation voltage • Complementary types: BSP 50.BSP 52 NPN ) Marking O rdering co d e (1 2 -m m tape)


    OCR Scan     		PDF P1166 OT-223 Q62702 P1168 BSP60 BSP61 BSP62

    MPSA56

    Abstract: MPSA56 diagram MPSA55 60V PNP TO-92 DS11204
    Text: MPSA55 / MPSA56 PNP SMALL SIGNAL TRANSISTOR Features • • • • Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Recommended for Driver and Low-Power Output Stages General Purpose Amplifier KM hM TO-92 Dim Min


    OCR Scan     		PDF MPSA55 MPSA56 MIL-STD-202, MPSA56 -10mA -100mA -100mA, MPSA56 diagram 60V PNP TO-92 DS11204

    pnp 200v

    Abstract: mpsa92 MPSA42
    Text: MPSA92 PNP HIGH VOLTAGE SMALL SIGNAL TRANSISTOR Features Epitaxial Planar Die Construction -300V Collector-Emitter Voltage Complimentary NPN Type Available MPSA42 KM TO-92 Mechanical Data_ • • • • • Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,


    OCR Scan     		PDF MPSA92 -300V MPSA42) MIL-STD-202, MPSA42 -200V, -10mA, -30mA, -20mA, pnp 200v mpsa92

    Untitled

    Abstract: No abstract text available
    Text: M AXIM UM RATINGS PNP Value Symbol BCX17LT1 BCX19LT1 C o llector-E m itter Voltage v CEO 45 25 Vdc Collector-Base Voltage v CBO 50 30 Vdc Em itter-Base Voltage v EBO 5.0 Vdc 'c 500 m Adc Rating C ollector C urrent — C ontinuous BCX18LT1 BCX20LT1 NPN BCX17LTKD


    OCR Scan     		PDF BCX17LT1 BCX19LT1 BCX18LT1 BCX20LT1 BCX17LTKD BCX18LTKD BCX20LT1 BCX17, BCX18,