MARKING AT SOT363 Search Results

702E

Abstract: MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT
Contextual Info: E L E C T R O N I C Device Marking of Surface Mount MOSFET July 2007 /Rev. 1 Part Number Package Marking 2N7002E SOT-323 702E SRT84W SOT-323 AW 2N7002S SOT-363 702S SRT84S SOT-363 VS 2N7002 SOT-23 7002 2N7002ES SOT-23 PK1 SRT100 SOT-23 T100 SRT170 SOT-23 AT

5967-5769E

Abstract: class D power amplifier 6.78 MHz a006 INA-32063 INA-32063-BLK NF50 marking 320 SOT-363
Contextual Info: 3.0 GHz Wideband Silicon RFIC Amplifier Technical Data INA-32063 Features • 17 dB Gain at 1.9 GHz Surface Mount SOT-363 SC-70 Package • +3 dBm P1 dB at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications Pin Connections and Package Marking

ina 333 amplifier

Abstract: a006 INA-32063 INA-32063-BLK NF50 AN-A006
Contextual Info: 3.0 GHz Wideband Silicon RFIC Amplifier Technical Data INA-32063 Features • 17 dB Gain at 1.9 GHz Surface Mount SOT-363 SC-70 Package • +3 dBm P1 dB at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications Pin Connections and Package Marking

8 pin IC 34063

Abstract: 34063 34063 schematic MARKING A2a SOT363
Contextual Info: What H E W LET T 1 "KM PA C K A R D 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features Surface Mount SOT-363 SC-70 Package Applications Pin Connections and Package Marking • +8 dBm Pj dB at 1.9 GHz • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at

Contextual Info: 3-volt, Low Noise Amplifier for 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • 1.6 dB minimum Noise Figure at 1.9 GHz Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB

marking code ga sot 363

Abstract: rfics marking 5 rfics marking 76 MGA-85563 MGA-85563-BLK MGA-85563-TR1 NF50 marking 34 sot-363 rf sot143 TOP marking mga 017
Contextual Info: 3-volt, Low Noise Amplifier for 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • 1.6 dB minimum Noise Figure at 1.9 GHz Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB

Low Noise Gaas

Contextual Info: 3-volt, Low Noise Amplifier for 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • 1.6 dB minimum Noise Figure at 1.9 GHz Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB

Contextual Info: 3-volt, Low Noise Amplifier for␣ 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • 1.6 dB minimum Noise Figure at 1.9 GHz Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB

Contextual Info: BFS17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

BFS17S

Abstract: VPS05604 NPN marking MCs
Contextual Info: BFS17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

DIN 6784 c1

Abstract: BCR108S BFS17S E6327 VPS05604
Contextual Info: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

6c2 transistor

Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Contextual Info: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor

VPS05604

Abstract: bfs 11
Contextual Info: BFS 17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363

A1s sot23

Abstract: BAW56S E6327 MARKING CODE A1s
Contextual Info: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 Type BAW56 BAW56S BAW56T BAW56U BAW56W 1 D 2 2 3 Package SOT23 SOT363 SC75 SC74 SOT323

Contextual Info: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V ID TA = +25°C 170mA 200mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching

Contextual Info: 2N7002DWA Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V 6Ω @ VGS = 10V SOT363 • • • • • • • • • • ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the

Contextual Info: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V ID TA = +25°C 170mA 200mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching

transistor smd yw

Abstract: BAP70AM array marking 20 NXP
Contextual Info: BAP70AM Silicon PIN diode array Rev. 01 — 20 November 2006 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features • ■ ■ ■ High voltage current controlled RF resistor for RF attenuators

Contextual Info: D5V0F4U6S 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Features Mechanical Data • IEC 61000-4-2 ESD : Air ±15kV, Contact ±8kV   4 Channels of ESD Protection   Low Channel Input Capacitance of 0.5pF Typical  Case: SOT363 Case Material: Molded Plastic, "Green" Molding Compound. UL

data sheet for all smd components

Abstract: BAP70AM
Contextual Info: BAP70AM Silicon PIN diode array Rev. 2 — 7 September 2010 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features and benefits „ „ „ „ High voltage current controlled RF resistor for RF attenuators

Contextual Info: BAP70AM Silicon PIN diode array Rev. 2 — 7 September 2010 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features and benefits ̈ ̈ ̈ ̈ High voltage current controlled RF resistor for RF attenuators

SMD 6 PIN IC MARKING CODE z1

Abstract: TRANSISTOR SMD MARKING CODES TRANSISTOR SMD CODE PACKAGE SOT363 Transistor SMD marking code NV
Contextual Info: PUMX2 NPN/NPN general-purpose double transistors Rev. 01 — 10 November 2005 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose double transistors in a small SOT363 SC-88 Surface Mounted Device (SMD) plastic package. 1.2 Features

Contextual Info: BAP70AM Silicon PIN diode array Rev. 3 — 27 January 2014 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features and benefits      High voltage current controlled RF resistor for RF attenuators

PUMH24

Abstract: TRANSISTOR SMD MARKING CODES TRANSISTOR SMD CODE PACKAGE SOT363
Contextual Info: PUMH24 NPN/NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Rev. 03 — 15 October 2004 Product data sheet 1. Product profile 1.1 General description NPN/NPN resistor-equipped transistors in a SOT363 SC-88 SMD plastic package. 1.2 Features