MARKING BA 8 PIN Search Results

MARKING P1 TRANSISTOR

Abstract: transisitor marking code Power Transisitor 100V 2A 800H SAB-C513A-H SAF-C513A-H
Contextual Info: Microcomputer Components Technical Support Group Munich HL MCB PD 8 Errata Sheet May 6, 1996 / Release 1.3 Device : Marking : SAB-C513A-H SAF-C513A-H BA These parts of the SAB-C513A-H are the EEPROM version of the C511/C513 family of components and can be identified by the letters "BA" below the part

marking t54

Abstract: 2pa30
Contextual Info: L BAT54 SCHOTTKY BARRIER DIODE BAT54 single diode PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BA T54 -4L J .Q 2.8 0.14 0.48 -*^p d 3§ 038 Pin configuration L 0.70 0.50 3 1= ANODE 2 = NC 3 = CATHODE t .4 2.6 2.4 1.2 R0.1 ÔÔÔ4T ii.8<r 0 .6 0 . 2.00

marking SH SOT23

Abstract: smd marking 619 BB505B smd marking bb marking 12 SOD123 SOD-123 BB801 BB409 BA 811 SIEMENS marking
Contextual Info: SIEMENS AKTIEN 6E SEL LSCHAF 47E D 0235bDS OOebBST T « S I E G NF-Dioden / AF Diodes PIN Diodes Glass Package Type Max. ratine3s 1/r h mA V Marking Fig. nX 50 150 < 50 0.55 1 < 40 100 < 1 DO-35 DHD - 2 20 o 0.92 0.28 1 1 < 0.7 22 100 100 < 1 < 1.1 SOD-123

ba 2nd years

Abstract: KRX101U b.a 1st year ba 2nd year ba 1st year
Contextual Info: SEMICONDUCTOR KRX101U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX101U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

ba682

Abstract: diode marking code 682 BA683 MAF100
Contextual Info: I : übe t> : m aaasbos 0 0 1 5 7 3 1 • • ? « s ie g - 7 " - Ô 7 - /5 " Silicon PIN Diodes BA 682 .BA 683 - SIEMENS AKTIENGESELLSCHAF -• Low-loss VHF band switch for TV tuners K A Type1 Marking

MAF100

Abstract: diode 682 diode marking code 682 BA 682 BA682 DIODE ba 683 BA diode BA683 A723 682 diode
Contextual Info: I - QBE D • • aaaSbQS 0015731 7 M S I E G Silicon PIN Diode» 7"- • - Ô7 - /S BA 682 • BA 683 - SIEMENS AK TI EN G E S E L L S C H A F - Low-loss VHF band switch for TV tuners K o A n Type1 Marking Ordering code for versions in bulk

ba 2nd years

Abstract: transistor mark BA KRX101E marking BA
Contextual Info: SEMICONDUCTOR KRX101E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX101E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

ba 2nd years

Abstract: KRX201E marking BA
Contextual Info: SEMICONDUCTOR KRX201E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX201E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

transistor mark BA

Abstract: KRX201U ba 2nd years
Contextual Info: SEMICONDUCTOR KRX201U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX201U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

Contextual Info: SIEMENS Silicon PIN Diode BA 597 Preliminary Data • RF switch, RF attenuator for frequencies above 10 MHz • Very low IM distortion Type BA 597 Ordering Code Pin Configuration taped 1 2 UPON INQUIRY C A Marking Package yellow/R SOD-323 Maximum Ratings

GP 023 DIODE

Abstract: GP 005 DIODE
Contextual Info: BA 895 Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications 2 • Frequency range 1 MHz . 2 GHz • Especially useful as antenna switch in TV-sat tuners 1 VES05991 Type Marking Pin Configuration Package BA 895 R

h78l05

Abstract: C4149 H78LXXAM H78L12 Marking BA SOT89 TL 873 H78LXX H78LXXAA h78L0 C3745
Contextual Info: HI-SINCERITY Spec. No. : IC200403 Issued Date : 2004.03.01 Revised Date : 2004.08.31 Page No. : 1/10 MICROELECTRONICS CORP. H78LXXAM / BM H78LXXAA / BA H78LXX Series Pin Assignment 3-TERMINAL POSITIVE VOLTAGE REGULATORS 1 2 3-Lead Plastic SOT-89 Package Code: M

StarRam

Abstract: 1MX16Y3VTW
Contextual Info: StarRam Part No : 1MX16Y3VTW DRAM and Flash Specialise SYNCHRONOUS DRAM PIN ASSIGNMENT Top View 50-Pin TSOP FEATURES Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can

Contextual Info: ADVANCE M T48LC 4M 4R 1 S 4 MEG X 4 SDRAM l ^ lld R O N 4 MEG SYNCHRONOUS DRAM 4 SDRAM X Pulsed RAS, Dual Bank, BURST Mode, 3.3V, SELF REFRESH PIN ASSIGNMENT (Top View) • Fully synchronous; all signals (excluding clock enable) registered to positive edge of system clock

MBM29LV800TA-70PF

Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV800BA-70PFTN cost
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-6E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(1), 44-pin SOP, and 48-ball FBGA

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-5E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA

Contextual Info: Series 43000 .4375" 11.11mm Center-to-Center Spacing Single Row Features: ̋ Cost-competitixe line of .4375" (11.11mm) centerline terminal blocks provides design engineers with multitude of selection choices: base mount and feed thru styles with P.C. pin, turret, quick connect, wire wrap and right angle.

29F800TA

Abstract: 29f800ba MBM29F800 29F800T
Contextual Info: • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP I (Package suffix: PFTN - Normal Bend Type, PFTR - Reversed Bend Type)

Contextual Info: SDRAM AS4SD8M16 Austin Semiconductor, Inc. 8M x 16 SDRAM PIN ASSIGNMENT Top View SYNCHRONOUS DRAM MEMORY FEATURES • • • • • • • • Single 3.3V Power Supply Fully Synchronous to positive Clock Edge SDRAM CAS Latency = 2 (66 MHz), 3 (75 MHz or 83 MHz)

AS4SD8M16

Contextual Info: SDRAM AS4SD8M16 PRELIMINARY Austin Semiconductor, Inc. 8M x 16 SDRAM PIN ASSIGNMENT Top View SYNCHRONOUS DRAM MEMORY FEATURES • • • • • • • • Single 3.3V Power Supply Fully Synchronous to positive Clock Edge SDRAM CAS Latency = 2 (66 MHz), 3 (75 MHz or 83 MHz)

AX78L05

Abstract: FE0004 AX78LXX C3745 c3641 SOT-89 code BA
Contextual Info: Page No. : 1/10 AX78LXXAM/BM AX78LXXAA/BA AX78LXX Series Pin Assignment 3-Terminal Positive Voltage Regulators 1 2 3-Lead Plastic SOT-89 Package Code: M Pin 1: VOUT Pin 2: GND Pin 3: VIN 3 Description 3-Lead Plastic TO-92 Package Code: A Pin 1: VOUT Pin 2: GND

transistor BA RW

Contextual Info: Product specification Philips S em iconductors BC817W; BC818W NPN general purpose transistor PIN CONFIGURATION FEATURES • H igh c u rre n t • S - m in i p a c k a g e . R> R 1 DESCRIPTION °“C N P N tra n s is to r in a p la s tic S O T 3 2 3 package.

Contextual Info: ? BMI FUJITSU SEMICONDUCTOR DATA SHEET • DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard word-wide pinouts

DDR3 pin out

Abstract: DDR3 SDRAM rs-1 SO-DIMM DDR3 ECC DDR3 SDA sdram ddr3
Contextual Info: UG12U7200M8FU Data sheets can be downloaded at www.unigen.com Solutions For A Real Time World TM 1G Bytes 128M x 72 bits SYNCHRONOUS DRAM MODULE 204 Pin DDR3 SDRAM Unbuffered SODIMM w/ECC based on 9 pcs 128M x 8 DDR2 SDRAM 8K Refresh SPECIFICATIONS FEATURES