MARKING CODE 5A SOT23 Search Results

MOSFET MARKING 3F

Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
Contextual Info: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz

marking code ce SOT23

Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Contextual Info: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A

C5440

Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824021 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - unidirectional • ESD Protection for 1 Line - bidirectional

dmp2100u

Abstract: 35P marking DMP2100U-7
Contextual Info: DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Package V BR DSS RDS(ON) MAX -20V 38mΩ @ VGS = -10V 43mΩ @ VGS = -4.5V 75mΩ @ VGS = -2.5V SOT23 ID TA = +25°C -4.3A -4.0A -2.8A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

WE-TVS

Abstract: 824021 74638 marking JB sot23 wetvs
Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824021 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2009-02-03 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - unidirectional • ESD Protection for 1 Line - bidirectional

T2S SOT-23

Abstract: 5A MARKING CODE SOT23 PJDLC03
Contextual Info: PJDLC03~PJDLC24 POWER SOT-23 400 Watts Unit：inch mm ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEEDDATA LINES 0.120(3.04) This transient overvoltage suppressor is intended to prodect sensitive equipment againset electrostatic discharge events as well to offer a minmum lnsertion loss

SOT89 MARKING CODE 3D

Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Contextual Info: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK

Contextual Info: PJDLC03~PJDLC24 3.3 to 24 Volts POWER 400 Watts ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEED DATA LINES 0.006 0.15 MIN. VOLTAGE 0.120(3.04) 0.110(2.80) This transient overvoltage suppressor is intended to prodect sensitive equipment

PXTA14

Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.

SMS05C

Abstract: SMS12C SMS15C SMS24C 652 diode TRANSIENT
Contextual Info: SMS05C TVS Diode Array For ESD and Latch-Up Protection thru SMS24C TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com December 17, 1998 DESCRIPTION The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to

Contextual Info: Datasheet N-Channel Enhancement Mode MOSFET Features TDM2302 Pin Description 20V/5A , RDS ON =20mΩ(typ.) @ VGS =4.5V RDS(ON) =40mΩ(typ.) @ VGS =2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)

Contextual Info: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data •           BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current 625mW Power dissipation

Contextual Info: DESD24VS2SO Features Mechanical Data • Provides ESD Protection per IEC 61000-4-2 Standard: • Air – ±30kV, Contact – ±30kV • • • 230W Peak Power Dissipation Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0

FMMT634Q

Contextual Info: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current

SMS05

Abstract: SMS12 SMS15 SMS24
Contextual Info: SMS05 TVS Diode Array For ESD and Latch-Up Protection thru SMS24 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com October 28, 1998 DESCRIPTION The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to

Contextual Info: _ SMS05 j • ,■.» -.„ ,V r " " August 28, 1998 TVS Diode Array For ESD and Latch-Up Protection thru SMS24 TE L805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to

tvs MARKING CODE LAYOUT SOT23

Abstract: SMS05C SMS12C SMS15C SMS24C IFA1999
Contextual Info: SMS05C TVS Diode Array For ESD and Latch-Up Protection thru SMS24C TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com December 17, 1998 DESCRIPTION The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to

Contextual Info: BC807-16/-25/-40 0.3 Watts, PNP Plastic-Encasulate Transistor Small Signal Product Features SOT-23 ◇ Ideally suited for automatic insertion ◇ Epitaxial planar die construction ◇ For switching, AF driver and amplifer applications ◇ Complementary NPN type available BC817

FMMT634Q

Contextual Info: A Product Line of Diodes Incorporated FMMT634Q 100V NPN DARLINGTON TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features 

DIODE marking Sl

Abstract: DIODE marking L12 TVS DIODE Vbr SL05 SL24 sl diode diode marking code sl TVS 15 Diode 7SL05 marking code L05 SOT 23
Contextual Info: SL05 Low Capacitance TVS Diode For High-Speed Data Interfaces thru SL24 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com Revised - February 15, 1999 DESCRIPTION The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to

Contextual Info: A Product Line of Diodes Incorporated FMMT620 80V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > 80V IC = 1.5A Continuous Collector Current RCE SAT = 90mΩ for a low equivalent On-Resistance

Contextual Info: _ SMS05C j • ,■.» - „ ,V r " " September 17, 1998 TVS Diode Array For ESD and Latch-Up Protection thru SM S24C TE L805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to

tvs MARKING CODE LAYOUT SOT23

Contextual Info: SMS05C THRU SMS24C TVS Diode Array For ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features ‹ Transient protection for data lines to The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to

Contextual Info: DMN2050L N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • 29m @VGS = 4.5V • 50m @VGS = 2.5V  100m @VGS = 2.0V  Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0