MARKING CODE JA SOT23 Search Results

BAV74

Contextual Info: BAV74 Dual Surface Mount Switching Diode SOT-23 Features — For high-speed switching appilication. — Common cathode. Applications — Small signal switching Ordering Information Dimensions in inches and millimeters Type No. Marking Package Code BAV74 JA

Contextual Info: DMN2050L N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • 29m @VGS = 4.5V • 50m @VGS = 2.5V  100m @VGS = 2.0V  Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0

Contextual Info: DMP2225L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) Package -20V 110mΩ @ VGS = -4.5V 225mΩ @ VGS = -2.5V SOT23 ID TA = +25°C -2.6A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching

Contextual Info: DMG6968U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data •  Low On-Resistance • 25mΩ @ VGS = 4.5V • 29mΩ @ VGS = 2.5V  36mΩ @ VGS = 1.8V  Low Input Capacitance  Fast Switching Speed  Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound.

Contextual Info: FS01 SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 400 V ÷ 600 V TO-92 FS01xxxA FEATURES • Glass/passivated die junctions SOT-223 (FS01xxxN) K G A A K SOT23-3L A G • Low current SCR • Low thermal resistance

Contextual Info: FS01 SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 400 V ÷ 600 V TO-92 FS01xxxA FEATURES • Glass/passivated die junctions SOT-223 (FS01xxxN) K G A A K SOT23-3L A G • Low current SCR • Low thermal resistance

dmp2100u

Abstract: 35P marking DMP2100U-7
Contextual Info: DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Package V BR DSS RDS(ON) MAX -20V 38mΩ @ VGS = -10V 43mΩ @ VGS = -4.5V 75mΩ @ VGS = -2.5V SOT23 ID TA = +25°C -4.3A -4.0A -2.8A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

PBRP113ZT

Abstract: PBRN113ZT
Contextual Info: PBRP113ZT PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 16 January 2008 Product data sheet 1. Product profile 1.1 General description 800 mA PNP low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

PBRP123YT

Abstract: SOT23 NXP power dissipation TO-236AB PBRN123YT marking 41 sot23 nxp
Contextual Info: PBRP123YT PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 17 December 2007 Product data sheet 1. Product profile 1.1 General description 800 mA PNP low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

PBRN123ET

Abstract: PBRP123ET SOT23 NXP power dissipation TO-236AB
Contextual Info: PBRP123ET PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 01 — 16 January 2008 Product data sheet 1. Product profile 1.1 General description 800 mA PNP low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

smd TRANSISTOR code marking 7k sot23

Abstract: PBRP113ET PBRN113ET
Contextual Info: PBRP113ET PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 1 kΩ Rev. 01 — 17 December 2007 Product data sheet 1. Product profile 1.1 General description 800 mA PNP low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

TRANSISTOR SMD MARKING CODE JSs

Abstract: smd JSs transistor TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD MARKING CODE pKX smd code pKX smd JSs SMD CODE TRANSISTOR JA smd transistor FY smd transistor marking PA 6 pin TRANSISTOR SMD CODE PA
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device SMD in thin and thick-film circuits with

PBSS5140T

Abstract: TRANSISTOR SMD MARKING CODES PBSS4140T NXP TRANSISTOR SMD MARKING CODE SOT23
Contextual Info: PBSS5140T 40 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 29 July 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

DMN62D1SFB

Contextual Info: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits 2 RDS(on) Max ID Max @ TA = +25°C • Footprint of just 0.6mm – thirteen times smaller than SOT23  Low On-Resistance 1.4 @ VGS= 10V

Contextual Info: t.bSB'm DOSSfllO b74 • APX PMBF170 N AUER PHILIPS/DISCRETE b7E D _ J \ _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed fo r use as a

Contextual Info: Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

smd code marking ft sot23

Abstract: PBSS4032PT marking "td" sot23
Contextual Info: PBSS4032NT 30 V, 2.6 A NPN low VCEsat BISS transistor Rev. 01 — 18 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

PBSS4021PT

Abstract: pbss4021nt
Contextual Info: PBSS4021NT 20 V, 4.3 A NPN low VCEsat BISS transistor Rev. 01 — 31 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS4032PT 30 V, 2.4 A PNP low VCEsat BISS transistor Rev. 01 — 18 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

marking C25 SOT23-5

Abstract: 16V16 TK63135 marking code C33 TK63133 TK63118S
Contextual Info: [TK631xxB/H/S] TK631xxH/S CMOS LDO Regulator 1-. DESCRIPTION 4-. PIN CONFIGURATION The TK631xxH/S is a CMOS LDO regulator. The packages are the small and thin SON2017-6, and the extremely versatile SOT23-5. The IC is designed for portable applications with space

Contextual Info: PBSS4032NT 30 V, 2.6 A NPN low VCEsat BISS transistor Rev. 01 — 18 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS4021NT 20 V, 4.3 A NPN low VCEsat BISS transistor Rev. 01 — 31 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

pbss4041nt

Abstract: PBSS4041PT
Contextual Info: PBSS4041NT 60 V, 3.8 A NPN low VCEsat BISS transistor Rev. 01 — 31 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS4041PT 60 V, 2.7 A PNP low VCEsat BISS transistor Rev. 01 — 31 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.