smd k72 y5
Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR
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1N4148W
1N4148WX
1N4148X
1N4448W
1N4448WX
1N4448X
1N914W
1SS181
1SS184
1SS193
smd k72 y5
K72 y8
k72 y4
BAS70WT
46A gez
SMBJ8.5CA
SMBJ11CA
SMD Marking K72
sk 75 dgm
marking f5 sot-89
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d0147
Abstract: 2SC SERIES 7626 transistor 1D TRANSISTOR TRANSISTOR 2SC npn, transistor, sc 107 b TAA 981 2SC3838K 2SC4083 T146
Text: 2SC3838K 2SC4083 Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: — 2SC3838K; AD^, where ★is hFE code — 2SC4083; 1D-*, where ★ is hFE code high transition frequency, typically
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2SC3838K
2SC4083
SC-59)
SC-70)
2SC3838K;
2SC4083;
2SC3838K
GD147bS
2SC3838K,
d0147
2SC SERIES
7626 transistor
1D TRANSISTOR
TRANSISTOR 2SC
npn, transistor, sc 107 b
TAA 981
2SC4083
T146
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sot-363 marking 3C
Abstract: lf 10193
Text: Sii 900_ Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id (A ) r DS(on) (f i ) 0.480 e V q s = 10 V 0.63 0.700 V q s = 4.5 V 0.52 30 SOT-363 SC-70 (6-LEADS) Marking Code Lot Traceability and Oate Code I—- Part # Code
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OT-363
SC-70
S-02367--
23-Oct-OO
sot-363 marking 3C
lf 10193
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MARKING PARI SC70-6
Abstract: sot363 marking qs sm905
Text: SÌ1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id r D S (o n) (£2) A V P (A) 0.385 e VGS = 4.5 V 0.70 0.630 9 VGS = 2.5 V 0.54 20 SOT-363 SC-70 (6-LEADS) Marking Code L otTraceability and Date Code L— Pari # Code Top View
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1902DL
OT-363
SC-70
S-99188--
01-Nov-99
MARKING PARI SC70-6
sot363 marking qs
sm905
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diode sot-89 marking code
Abstract: sot-89 Marking LB marking QE diode marking gg 2a BH SOT-89 Q62702-A77 marking gg sot-89
Text: • Silicon Switching Diodes SIEMEN S/ SPCL-, ÔS3L.320 OOlbSSÔ fl W Ê Z I P BAW 79 A SEMICONDS 32E D -B AW 79 D r-eS 'U • • • For high-speed switching High breakdown voltage Common cathode Typo Marking Ordering code for versions In bulk Ordering code for
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Q62702-A679
Q62702-A680
Q62702-A681
Q62702-A682
Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
pac10
BAW79A
diode sot-89 marking code
sot-89 Marking LB
marking QE
diode marking gg 2a
BH SOT-89
Q62702-A77
marking gg sot-89
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2SA amplifier
Abstract: H1000I 2SA1514K 2SA1579 2SC3906K 2SC4102 transistor 2SA transistor PNP
Text: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1514K and 2SA1579; R-*, where ★ is hFE code • • high breakdown voltage: V qeo = -120 V complementary pair with 2SC3906K
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2SA1514K
2SA1579
SC-59)
SC-70)
2SA1579;
-120V
2SC3906K
2SC4102
2SA1514K
2SA amplifier
H1000I
2SA1579
2SC4102
transistor 2SA
transistor PNP
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A1727
Abstract: A1727 transistor
Text: 2SA1727F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A1727*Q, where ★ is hFE code and □ is lot number • high breakdown voltage, V qeo = - 400V low collector saturation voltage, ^C E (sat) ^ -1.0 V for
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2SA1727F5
SC-63)
A1727
A/-10
2SA1727F5
A1727 transistor
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Untitled
Abstract: No abstract text available
Text: Transistor, NPN 2SD1782K Features • available in SMT3 SMT, SC-59 package • package marking: 2SD1782K; AJ-fr, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = 0.2 V at lc/lB =0.5 A/50 mA • high breakdown voltage BV qeo =
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2SD1782K
SC-59)
2SD1782K;
2SB1198K
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MARKING CODE JT
Abstract: vishay siliconix code marking diode 0480 71249
Text: _ Si 1302 New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS(V) r DS(on) (^ ) Id (A) 0.480 V q s = 10 V 0.64 0.700 VGS = 4.5 V 0.53 30 SOT-323 SC-70 (3-LEADS) a U Marking Code JT L S ~3~[ D xx £ Lot Traceability and Date Code
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OT-323
SC-70
S-02367--
23-Oct-OO
MARKING CODE JT
vishay siliconix code marking
diode 0480
71249
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration
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Q62702-F1062
OT-23
BFT92
H35bD5
900MHz
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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900MHz
Q62702-F1501
OT-343
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 775 NPN Silicon RF Transistor •Especially suitable forT V -sat and UHF tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 775 LOs Q62702-F102 1= B Package 2= E 3=C
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Q62702-F102
OT-23
IS21el2
IS21/S
aS35bG5
Giai71b
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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BFP181R
900MHz
Q62702-F1685
OT-143R
235fc
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCP 51M . BCP53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN Type Marking Ordering Code Pin Configuration BCP 51M
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BCP53M
Q62702-C2592
Q62702-C2593
Q62702-C2594
SCT-595
6E35bOS
02BShD5
B35b05
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transistor Bf 966
Abstract: No abstract text available
Text: SIEMENS BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type Pin Configuration 1= B Q62702-F1519 2=E II CO RBs o BF 771W
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OT-323
Q62702-F1519
150it
transistor Bf 966
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SL 100 NPN Transistor base emitter collector
Abstract: SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN
Text: 2SD2114K Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code |E3 S i 24 Q- • high DC current amplification, typically hFE = 1200 • high emitter-base voltage,
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2SD2114K
SC-59)
2SD2114K;
12rves
2SD2114K
SL 100 NPN Transistor base emitter collector
SL 100 NPN Transistor
BF 273 transistor
transistor bf 274
BF 274 transistor
2SD2114
transistor CR NPN
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 148W NPN Silicon Digital Transistor • Switching circuit, ¡nverter, interface circuit, driver circuit ' Built in bias resistor Ri=47kiì, R2=47kQ Pin Configuration Q62702-C2291 1= B Package LU II CVÍ II Ordering Code WEs O Marking BCR 148W
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Q62702-C2291
OT-323
Therma148W
235L05
0235b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS PZTA 42 NPN Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: PZTA 92 PNP Type Marking Ordering Code Pin Configuration PZTA 42 PZTA 42 Q62702-Z2035 1=B 2=C Package 3=E
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Q62702-Z2035
OT-223
Jan-21-1999
100MHz
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transistor 2222a
Abstract: transistor 2222a CURRENT GAIN EHN0005 2222a sot23 2222A transistor
Text: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1 B Q68000-A6481 1=B
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Q68000-A6481
OT-23
EHN0005
EHN00056
10CK2,
Jan-22-1999
transistor 2222a
transistor 2222a CURRENT GAIN
2222a sot23
2222A transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBTA 92M PNP Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42M NPN II LD CO Q62702-A1244 II s2D o SMBTA 92M Pin Configuration CM Ordering Code II Marking 0Û
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Q62702-A1244
SCT-595
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
Q62702-F1314
OT-23
Junctio30
Q122DÃ
BFR181
IS21I2
E35bD5
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Untitled
Abstract: No abstract text available
Text: BCR 183W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R-| = '\0kQ, R2 = 10k£2 Type Marking Ordering Code Pin Configuration BCR 183W WMs Q62702-C2276 1= B Package 2= E 3=C SOT-323
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Q62702-C2276
OT-323
Nov-27-1996
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR116W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R i=4.7kii, R2=47kii & Pin Configuration Package II CO 1= B O UPON INQUIRY li WGs LU Marking Ordering Code BCR 116W
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47kii)
BCR116W
OT-323
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WFs transistor
Abstract: Siemens transistor WFs wfs marking
Text: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, inferface circuit, driver circuit «Built in bias resistor Ri=4.7kQ, R2=4.7kfl BCR 112 WFs Pin Configuration Q62702-C2254 1= B Package 2=E O Marking Ordering Code 05 II Type SOT-23
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Q62702-C2254
OT-23
300tis;
WFs transistor
Siemens transistor WFs
wfs marking
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