MARKING CODE SM 96 DIODE Search Results

ph 41 zener diode

Abstract: J150A 13.8 8w zener diode GHM DIODE marking code SM diode Diode GHM GGR diode sg 82 do-214aB marking ghm J78A
Contextual Info: SURFACE MOUNT TVS & Zener Diodes TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage

marking code SM diode

Abstract: GGV diode GGT DIODE marking SM 98 tvs diode sma nu GHM 25 DIODE GHM DIODE ph 41 zener diode ggr 86 176/Diode Zener C 47 pH
Contextual Info: SURFACE MOUNT TVS & Zener Diodes TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage

bu 3 GDG 125

Abstract: marking CODE smb J36 diode 13.8 8w zener diode DO-214A sma marking sm RG DO-214AA smj58 24 DO-214A bu 450 GDF diode gde 61 81g diode
Contextual Info: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage

diode marking H2

Abstract: AZ MARKING CODE diode marking code 96 DIODE marking 96
Contextual Info: DIODE ARRAYS MicrosemiCorp. y SANTA ANA, CA The diod e experts j / SCOTTSDALE, A Z For more information call: 602 941-6300 Features These p ro d u c ts a re d e sig n e d f o r d a ta lin e p ro te c tio n a t th e P.C. b o a rd level as w e ll as f o r O ih e r a p p lic a tio n s in c lu d in g : cam eras, sm a rt cards, e tc. w h ic h re q u ire

Contextual Info: MOTOROLA Order this document by M1MA151KT1/D SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the S C -5 9 package which is

Contextual Info: MOTOROLA Order this document by M1MA151WAT1/D SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diodes M1MA151WAT1 M1MA152WAT1 These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the S C -59

Contextual Info: MOTOROLA Order this document by M1MA151AT1/D SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the S C -5 9 package which is

20LC20u

Contextual Info: Super Fast Recovery Diode Twin Diode l ^ t l l DF20LC20US OUTLINE U n it‘m m Package : STO -220 W eight lJ> g T y p 10.2 200V 20A Dale code ^ Control No Feature • SMD • Low Noise • SM D • e y 'f x • trr=25ns @ T y p e No. +«- a il • trr-25ns

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . AND TEC I INNOVAT O L OGY SMC3K Series N HN Diodes O 19 62-2012 Diodes - TransZorb Bi-Directional TVS Surface-Mount Bi-Directional Transient Voltage Suppressors Feature High Surge Capability to 3 kW in SMC DO-214AB Package

1PS59SB21

Abstract: MARKING CODE 21
Contextual Info: DISCRETE SEMICONDUCTORS 1PS59SB21 Schottky barrier diode 1999 May 05 Product specification Supersedes data of 1998 Jul 28 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification Schottky barrier diode FEATURES 1PS59SB21 DESCRIPTION

smd CODE 3Gs

Abstract: smd diode schottky code marking 2F SMD DIODE marking AB Schottky
Contextual Info: International IOR Rectifier pd-9.mi2b IRF7422D2 PRELIMINARY FETKY M OSFET and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation 5 T echnology • SO-8 Footprint Vdss = -20V R DS on =

ps70sb

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Oct 28 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes FEATURES 1PS70SB40 series PINNING • Low forw ard voltage

1PS70SB10

Abstract: 1PS70SB14 1PS70SB15 1PS70SB16
Contextual Info: DISCRETE SEMICONDUCTORS PÆm StiEiT 1PS70SB10; 1PS70SB14; 1PS70SB15; 1PS70SB16 Schottky barrier double diodes Product specification Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification 1PS70SB10; 1PS70SB14; 1PS70SB15; 1PS70SB16

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Oct 28 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes FEATURES BAS40W series PINNING • Low forw ard voltage BAS40

AT120A

Contextual Info: DISCRETE SEMICONDUCTORS 0ITÂ S y iI T BAT120 series Schottky barrier double diodes Product specification Supersedes data of 1998 Jan 21 Philips Sem iconductors 1998 Oct 30 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes

Contextual Info: T O S H IB A TFR1 N,TFR1T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR1N, TFR1T STROBO FLASHER APPLICATIONS. FAST RECOVERY • • • Unit in mm Average Forward Current : Ijr (AV) = 0.5A Repetitive Peak Reverse Voltage : Vr rm = 1000, 1500V Reverse Recovery Time

Contextual Info: DISCRETE SEMICONDUCTORS GMTâ SlnlEET BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of 1996 Sep 10 Philips Semiconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification General purpose controlled avalanche

VISHAY MARKING SG

Abstract: S07D-GS08 s07j Do219AB
Contextual Info: S07B, S07D, S07G, S07J, S07M Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • • • • • For surface mounted applications Low profile package Ideal for automated placement Glass passivated High temperature soldering: 260 °C/10 s

Contextual Info: S07B / 07D / 07G / 07J / 07M Vishay Semiconductors Small Signal Fast Switching Diode, High Voltage Features • • • • • For surface mounted applications Low profile package e3 Ideal for automated placement Glass passivated High temperature soldering:

s07j Do219AB

Abstract: VISHAY MARKING SG vishay sj 96 VISHAY MARKING SJ vishay diode MARKING CODE sg DO219AB S07B S07D S07G S07J
Contextual Info: S07B, S07D, S07G, S07J, S07M Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • • • • • For surface mounted applications Low profile package Ideal for automated placement Glass passivated High temperature soldering: 260 °C/10 s

JTK19

Contextual Info: CNY65Exi Vishay Telefun ken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and

Contextual Info: DISCRETE SEMICONDUCTORS PLVA2600A series Low-voltage avalanche regulator double diodes Product specification Supersedes data of 1996 May 06 Philips Semiconductors 1999 May 10 PHILIPS PHILIPS Philips Semiconductors Product specification Low-voltage avalanche regulator double

DIODE smd marking 821

Abstract: smd diode marking sm 34 smd diode 6F MCC SMD DIODE Diode smd code sm 97 diode SMD CODE sm 17 smd marking BLD Diode smd marking 44 st smd diode marking code marking 501 sod323
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB164 VHF variable capacitance diode Product specification 1997 Dec 17 Philips Semiconductors Product specification VHF variable capacitance diode BB164 FEATURES DESCRIPTION • High linearity The BB164 is a planar technology

vishay diode MARKING CODE sg

Contextual Info: S07B, S07D, S07G, S07J, S07M Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • • • • • For surface mounted applications Low profile package Ideal for automated placement Glass passivated High temperature soldering: 260 °C/10 s