SG DIODE
Abstract: diode sg-64 diode sg 71
Text: W83773G/SG W83773G / W83773SG Nuvoton H/W Monitoring IC DATE: OCTOBER 21TH, 2009 REVISION: 1.2 -I- W83773G/SG TABLE OF CONTENTS- 1. GENERAL DESCRIPTION . 1
|
Original
|
PDF
|
W83773G/SG
W83773G
W83773SG
SG DIODE
diode sg-64
diode sg 71
|
W83L771ASG-2
Abstract: 771AWG W83L771AWG-2
Text: W83L771AWG W83L771ASG Nuvoton H/W Monitoring IC DATE: NOVEMBER 19TH, 2009 REVISION: 1.91 TABLE OF CONTENTS1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION . 1 1.1
|
Original
|
PDF
|
W83L771AWG
W83L771ASG
W83L771ASG-2
771AWG
W83L771AWG-2
|
vqfn8
Abstract: pwm driver sot-26 sot-26 led driver pwm VQFN-8 SOT 86 MARKING 03 sot-26 led driver AAT1500 MO-178 pwm driver sot-25 marking D3 SOT26
Text: Advanced Analog Technology, Inc. AAT1500 Product information presented is current as of publication date. Details are subject to change without notice CONSTANT CURRENT BOOST CONVERTER FOR 1 TO 4 WHITE LEDS Features General Description z Up to 4 LEDs at 2.8V Supply
|
Original
|
PDF
|
AAT1500
AAT1500
OT-25
OT-26
OT-25,
vqfn8
pwm driver sot-26
sot-26 led driver pwm
VQFN-8
SOT 86 MARKING 03
sot-26 led driver
MO-178
pwm driver sot-25
marking D3 SOT26
|
Untitled
Abstract: No abstract text available
Text: ECL Pro ECLSY10EP01V Pro™ SY10EP01V FINAL 5V/3.3V 4-INPUT OR/NOR Micrel FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 230ps typical propagation delay High bandwidth to 3GHz 75kΩ internal input pulldown resistors Q output will default LOW with inputs open
|
Original
|
PDF
|
SY10EP01V
230ps
SY10EP01V
|
2N3904 731
Abstract: No abstract text available
Text: W83L771W/W83L771G Winbond H/W Monitoring IC W83L771W/ W83L771G W83L771W Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB 0.5 NA First Release MAIN CONTENTS 1 n.a. 2 n.a. 01/31/05 0.6 NA Add lead-free package version 3 n.a. 03/31/06 0.7 NA Correct section 8.6 conversion rate;
|
Original
|
PDF
|
W83L771W/W83L771G
W83L771W/
W83L771G
W83L771W
2N3904 731
|
W83L771W
Abstract: 2N3904 W83L771G
Text: W83L771W/W83L771G Winbond H/W Monitoring IC W83L771W/ W83L771G W83L771W Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB 0.5 NA First Release MAIN CONTENTS 1 n.a. 2 n.a. 01/31/05 0.6 NA Add lead-free package version 3 n.a. 03/31/06 0.7 NA Correct section 8.6 conversion rate;
|
Original
|
PDF
|
W83L771W/W83L771G
W83L771W/
W83L771G
W83L771W
W83L771W
2N3904
W83L771G
|
HEL01
Abstract: No abstract text available
Text: SY10EL01 SY100EL01 FINAL 4-INPUT OR/NOR FEATURES • ■ ■ ■ DESCRIPTION 230ps propagation delay High bandwidth output transitions Internal 75KΩ input pull-down resistors Available in 8-pin SOIC package The SY10/100EL01 are 4-input OR/NOR gates. These
|
Original
|
PDF
|
SY10EL01
SY100EL01
230ps
SY10/100EL01
HEL01
|
Untitled
Abstract: No abstract text available
Text: TLV5638 www.ti.com SLAS225C – JUNE 1999 – REVISED JANUARY 2004 2.7-V TO 5.5-V LOW-POWER DUAL 12-BIT DIGITAL-TO-ANALOG CONVERTER WITH INTERNAL REFERENCE AND POWER DOWN FEATURES 7 3 6 4 5 VDD OUTB REF AGND NC V DD 3 2 1 20 19 NC DIN NC 4 18 NC SCLK 5 17
|
Original
|
PDF
|
TLV5638
SLAS225C
12-BIT
TMS320
|
Untitled
Abstract: No abstract text available
Text: TLV5638ĆEP 2.7ĆV TO 5.5ĆV LOWĆPOWER DUAL 12ĆBIT DIGITALĆTOĆANALOG CONVERTER WITH INTERNAL REFERENCE AND POWER DOWN ą SGLS130B − JULY 2002 − REVISED DECEMBER 2003 D Compatible With TMS320 and SPI Serial features D Controlled Baseline D D D D
|
Original
|
PDF
|
TLV5638Ä
SGLS130B
TMS320
12-Bit
|
Untitled
Abstract: No abstract text available
Text: TLV5637 www.ti.com SLAS224C – JUNE 1999 – REVISED JUNE 2007 2.7V TO 5.5V LOW-POWER DUAL 10-BIT DIGITAL-TO-ANALOG CONVERTER WITH INTERNAL REFERENCE AND POWER DOWN FEATURES • • • • • • Dual 10-Bit Voltage Output DAC Programmable Internal Reference
|
Original
|
PDF
|
TLV5637
SLAS224C
10-BIT
TMS320
TLV5637
|
SY10EP01VZCTR
Abstract: SY10EP01V SY10EP01VKC SY10EP01VKCTR SY10EP01VZC
Text: 5V/3.3V 4-INPUT OR/NOR FEATURES • ■ ■ ■ ■ ■ SY10EP01V FINAL DESCRIPTION 3.3V and 5V power supply options 230ps typical propagation delay High bandwidth to 3GHz 75kΩ internal input pulldown resistors Q output will default LOW with inputs open
|
Original
|
PDF
|
SY10EP01V
230ps
SY10EP01V
0EP01VKC
SY10EP01VKCTR
SY10EP01VZCTR
SY10EP01VKC
SY10EP01VKCTR
SY10EP01VZC
|
Untitled
Abstract: No abstract text available
Text: 5V/3.3V 4-INPUT OR/NOR FEATURES • ■ ■ ■ ■ ■ PRELIMINARY SY10EP01V DESCRIPTION 3.3V and 5V power supply options 230ps typical propagation delay High bandwidth to 3GHz 75kΩ internal input pulldown resistors Q output will default LOW with inputs open
|
Original
|
PDF
|
SY10EP01V
230ps
SY10EP01V
HEP01
|
AX 161A
Abstract: No abstract text available
Text: PI74FCT161T/163T Ω Series PI74FCT2161T/2163T 25Ω
|
Original
|
PDF
|
PI74FCT161T/163T
PI74FCT2161T/2163T
PI74FCT161/163/2161/2163T
PI74FCT
PI74FCT2XXX
PI74FCT245ATQ
245TQ
0010BSC
14-pin
AX 161A
|
Untitled
Abstract: No abstract text available
Text: 5V/3.3V 4-INPUT OR/NOR SY10EP01V FINAL FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 230ps typical propagation delay High bandwidth to 3GHz 75kΩ internal input pulldown resistors Q output will default LOW with inputs open Available in 8-pin MSOP and SOIC packages
|
Original
|
PDF
|
SY10EP01V
230ps
HEP01
SY10EP01V
|
|
|
SA56004ED2
Abstract: 6004g lthb SA56004EDP npn 2n3906 marking lthb SA56004GD SA56004X 2N3904 2N3906
Text: INTEGRATED CIRCUITS SA56004X ±1 °C accurate, SMBus-compatible, 8-pin, remote/local digital temperature sensor with over temperature alarms Product data sheet Supersedes data of 2003 Sep 03 Philips Semiconductors 2004 Oct 06 Philips Semiconductors Product data sheet
|
Original
|
PDF
|
SA56004X
SA56004X
11-bit
SA56004
2N3904
2N3906
SA56004ED2
6004g
lthb
SA56004EDP
npn 2n3906
marking lthb
SA56004GD
2N3904
2N3906
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA HN2V02H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS. — • • • • High Capacitance Ratio : C1V/C8V= 19.5 Typ. High Q : Q = 200 (Min.) Including Three Devices in FM8 Package (Flat Pack Mini 8Pin)
|
OCR Scan
|
PDF
|
HN2V02H
|
H123
Abstract: MARKING D3 8pin HN2V02H
Text: HN2V02H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS. High Capacitance Ratio : CIV /C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Three Devices in FM8 Package (Flat Pack Mini 8Pin) Low Voltage Operation : V r = 1—8V
|
OCR Scan
|
PDF
|
HN2V02H
H123
MARKING D3 8pin
HN2V02H
|
HN1V01H
Abstract: No abstract text available
Text: HN1V01H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN 1V 01H Unit in mm AM RADIO BAND TUNING APPLICATIONS. + 0.3 4.5 - 0.2 High Capacitance Ratio :CIV /C8V = 19.5 Typ. High Q :Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin)
|
OCR Scan
|
PDF
|
HN1V01H
HN1V01H
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA HN1V01H SILICON EPITAXIAL PLANAR TYPE HN1V 01 H Unit in mm A M RADIO BAND TUNING APPLICATIONS. • • • • High Capacitance Ratio :CIV /C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Four Devicesin FM8 Package (Flat Pack Mini 8Pin) Low Voltage Operation :
|
OCR Scan
|
PDF
|
HN1V01H
|
Untitled
Abstract: No abstract text available
Text: HN1V01H TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE HN1V 0 1 H Unit in mm AM RADIO BAND TUNING APPLICATIONS 0.3 4.5 - 0.2 “ “ High Capacitance Ratio : CIV /C8V= 19.5(Typ. High Q : Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin)
|
OCR Scan
|
PDF
|
HN1V01H
|
HN2V02H
Abstract: No abstract text available
Text: TO SH IBA HN2V02H SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS. High Capacitance Ratio : CIV /C8V= 19.5 Typ. High Q : Q = 200 (Min.) Including Three Devices in FM8 Package (Flat Pack Mini 8Pin) Low Voltage Operation : V r = 1—8V
|
OCR Scan
|
PDF
|
HN2V02H
HN2V02H
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A HN2V02H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS. . • • • High Capacitance Ratio : C IV / C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Three Devices in FM8 Package (Flat Pack Mini 8Pin)
|
OCR Scan
|
PDF
|
HN2V02H
|
Untitled
Abstract: No abstract text available
Text: HN1V01H T O SH IB A TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1V 0 1 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. . • • • High Capacitance Ratio : C IV / C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin)
|
OCR Scan
|
PDF
|
HN1V01H
|
38AN
Abstract: No abstract text available
Text: HN1V01H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1V 0 1 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. High Capacitance Ratio : C1V/C8V= 19.5 Typ. High Q : Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin) Low Voltage Operation : V r = 1~8V
|
OCR Scan
|
PDF
|
HN1V01H
38AN
|
