SG DIODE
Abstract: diode sg-64 diode sg 71
Text: W83773G/SG W83773G / W83773SG Nuvoton H/W Monitoring IC DATE: OCTOBER 21TH, 2009 REVISION: 1.2 -I- W83773G/SG TABLE OF CONTENTS- 1. GENERAL DESCRIPTION . 1
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W83773G/SG
W83773G
W83773SG
SG DIODE
diode sg-64
diode sg 71
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W83L771ASG-2
Abstract: 771AWG W83L771AWG-2
Text: W83L771AWG W83L771ASG Nuvoton H/W Monitoring IC DATE: NOVEMBER 19TH, 2009 REVISION: 1.91 TABLE OF CONTENTS1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION . 1 1.1
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W83L771AWG
W83L771ASG
W83L771ASG-2
771AWG
W83L771AWG-2
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vqfn8
Abstract: pwm driver sot-26 sot-26 led driver pwm VQFN-8 SOT 86 MARKING 03 sot-26 led driver AAT1500 MO-178 pwm driver sot-25 marking D3 SOT26
Text: Advanced Analog Technology, Inc. AAT1500 Product information presented is current as of publication date. Details are subject to change without notice CONSTANT CURRENT BOOST CONVERTER FOR 1 TO 4 WHITE LEDS Features General Description z Up to 4 LEDs at 2.8V Supply
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AAT1500
AAT1500
OT-25
OT-26
OT-25,
vqfn8
pwm driver sot-26
sot-26 led driver pwm
VQFN-8
SOT 86 MARKING 03
sot-26 led driver
MO-178
pwm driver sot-25
marking D3 SOT26
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Untitled
Abstract: No abstract text available
Text: ECL Pro ECLSY10EP01V Pro™ SY10EP01V FINAL 5V/3.3V 4-INPUT OR/NOR Micrel FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 230ps typical propagation delay High bandwidth to 3GHz 75kΩ internal input pulldown resistors Q output will default LOW with inputs open
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SY10EP01V
230ps
SY10EP01V
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2N3904 731
Abstract: No abstract text available
Text: W83L771W/W83L771G Winbond H/W Monitoring IC W83L771W/ W83L771G W83L771W Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB 0.5 NA First Release MAIN CONTENTS 1 n.a. 2 n.a. 01/31/05 0.6 NA Add lead-free package version 3 n.a. 03/31/06 0.7 NA Correct section 8.6 conversion rate;
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W83L771W/W83L771G
W83L771W/
W83L771G
W83L771W
2N3904 731
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W83L771W
Abstract: 2N3904 W83L771G
Text: W83L771W/W83L771G Winbond H/W Monitoring IC W83L771W/ W83L771G W83L771W Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB 0.5 NA First Release MAIN CONTENTS 1 n.a. 2 n.a. 01/31/05 0.6 NA Add lead-free package version 3 n.a. 03/31/06 0.7 NA Correct section 8.6 conversion rate;
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W83L771W/W83L771G
W83L771W/
W83L771G
W83L771W
W83L771W
2N3904
W83L771G
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HEL01
Abstract: No abstract text available
Text: SY10EL01 SY100EL01 FINAL 4-INPUT OR/NOR FEATURES • ■ ■ ■ DESCRIPTION 230ps propagation delay High bandwidth output transitions Internal 75KΩ input pull-down resistors Available in 8-pin SOIC package The SY10/100EL01 are 4-input OR/NOR gates. These
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SY10EL01
SY100EL01
230ps
SY10/100EL01
HEL01
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Untitled
Abstract: No abstract text available
Text: TLV5638ĆEP 2.7ĆV TO 5.5ĆV LOWĆPOWER DUAL 12ĆBIT DIGITALĆTOĆANALOG CONVERTER WITH INTERNAL REFERENCE AND POWER DOWN ą SGLS130B − JULY 2002 − REVISED DECEMBER 2003 D Compatible With TMS320 and SPI Serial features D Controlled Baseline D D D D
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TLV5638Ä
SGLS130B
TMS320
12-Bit
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Untitled
Abstract: No abstract text available
Text: TLV5637 www.ti.com SLAS224C – JUNE 1999 – REVISED JUNE 2007 2.7V TO 5.5V LOW-POWER DUAL 10-BIT DIGITAL-TO-ANALOG CONVERTER WITH INTERNAL REFERENCE AND POWER DOWN FEATURES • • • • • • Dual 10-Bit Voltage Output DAC Programmable Internal Reference
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TLV5637
SLAS224C
10-BIT
TMS320
TLV5637
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SY10EP01VZCTR
Abstract: SY10EP01V SY10EP01VKC SY10EP01VKCTR SY10EP01VZC
Text: 5V/3.3V 4-INPUT OR/NOR FEATURES • ■ ■ ■ ■ ■ SY10EP01V FINAL DESCRIPTION 3.3V and 5V power supply options 230ps typical propagation delay High bandwidth to 3GHz 75kΩ internal input pulldown resistors Q output will default LOW with inputs open
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SY10EP01V
230ps
SY10EP01V
0EP01VKC
SY10EP01VKCTR
SY10EP01VZCTR
SY10EP01VKC
SY10EP01VKCTR
SY10EP01VZC
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Untitled
Abstract: No abstract text available
Text: 5V/3.3V 4-INPUT OR/NOR FEATURES • ■ ■ ■ ■ ■ PRELIMINARY SY10EP01V DESCRIPTION 3.3V and 5V power supply options 230ps typical propagation delay High bandwidth to 3GHz 75kΩ internal input pulldown resistors Q output will default LOW with inputs open
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SY10EP01V
230ps
SY10EP01V
HEP01
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Untitled
Abstract: No abstract text available
Text: 5V/3.3V 4-INPUT OR/NOR SY10EP01V FINAL FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 230ps typical propagation delay High bandwidth to 3GHz 75kΩ internal input pulldown resistors Q output will default LOW with inputs open Available in 8-pin MSOP and SOIC packages
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SY10EP01V
230ps
HEP01
SY10EP01V
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rclamp2502l
Abstract: RailClamp® 2.5V TVS for GbE Applications RC2502L RC2502 GR-1089 GR-1089-CORE schematic symbol for rj45
Text: RClamp2502L RailClamp 2.5V TVS for GbE Applications PROTECTION PRODUCTS - RailClamp® Description Features A RailClamp is a low capacitance TVS array designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission
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RClamp2502L
rclamp2502l
RailClamp® 2.5V TVS for GbE Applications
RC2502L
RC2502
GR-1089
GR-1089-CORE
schematic symbol for rj45
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Untitled
Abstract: No abstract text available
Text: ECL Pro SY10EP01V FINAL 5V/3.3V 4-INPUT OR/NOR FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 230ps typical propagation delay High bandwidth to 3GHz 75kΩ internal input pulldown resistors Q output will default LOW with inputs open Available in 8-pin MSOP and SOIC packages
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SY10EP01V
230ps
HEP01
SY10EP01V
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setting alert mode
Abstract: 771GLUB 741 remote sensor circuit diagram 741 ic remote sensor circuit diagram
Text: W83L771G Winbond H/W Monitoring IC for UB-B version chip W83L771G W83L771G Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB 1 N.A. 07/05/2006 1.0 N.A First Release 2 11 07/11/2006 1.1 N.A Update typo on 7.6.1 negative temperature value -I-
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W83L771G
W83L771G
setting alert mode
771GLUB
741 remote sensor circuit diagram
741 ic remote sensor circuit diagram
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B0941
Abstract: tcn75-3.3mua 200B TCN75 TCN75MOA TCN75MUA
Text: TCN75 2-Wire Serial Temperature Sensor and Thermal Monitor Features • Solid-State Temperature Sensing; 0.5°C Accuracy Typ. • Operates from -55°C to +125°C • Operating Supply Range: 2.7V to 5.5V • Programmable Trip Point and Hysteresis with Power-up Defaults
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TCN75
TCN75s
D-81739
B09412SD*
DS21490B-page
B0941
tcn75-3.3mua
200B
TCN75
TCN75MOA
TCN75MUA
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HEL01
Abstract: XEL01 SY100EL01 SY100EL01ZC SY100EL01ZCTR SY10EL01 SY10EL01ZC SY10EL01ZCTR
Text: Micrel, Inc. 4-INPUT OR/NOR FEATURES • ■ ■ ■ SY10EL01 SY100EL01 SY10EL01 SY100EL01 DESCRIPTION 230ps propagation delay High bandwidth output transitions Internal 75KΩ input pull-down resistors Available in 8-pin SOIC package The SY10/100EL01 are 4-input OR/NOR gates. These
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SY10EL01
SY100EL01
230ps
SY10/100EL01
M9999-031006
HEL01
XEL01
SY100EL01
SY100EL01ZC
SY100EL01ZCTR
SY10EL01
SY10EL01ZC
SY10EL01ZCTR
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN2V02H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS. — • • • • High Capacitance Ratio : C1V/C8V= 19.5 Typ. High Q : Q = 200 (Min.) Including Three Devices in FM8 Package (Flat Pack Mini 8Pin)
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HN2V02H
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H123
Abstract: MARKING D3 8pin HN2V02H
Text: HN2V02H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS. High Capacitance Ratio : CIV /C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Three Devices in FM8 Package (Flat Pack Mini 8Pin) Low Voltage Operation : V r = 1—8V
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HN2V02H
H123
MARKING D3 8pin
HN2V02H
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HN1V01H
Abstract: No abstract text available
Text: HN1V01H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN 1V 01H Unit in mm AM RADIO BAND TUNING APPLICATIONS. + 0.3 4.5 - 0.2 High Capacitance Ratio :CIV /C8V = 19.5 Typ. High Q :Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin)
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HN1V01H
HN1V01H
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Untitled
Abstract: No abstract text available
Text: HN1V01H TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE HN1V 0 1 H Unit in mm AM RADIO BAND TUNING APPLICATIONS 0.3 4.5 - 0.2 “ “ High Capacitance Ratio : CIV /C8V= 19.5(Typ. High Q : Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin)
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HN1V01H
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Untitled
Abstract: No abstract text available
Text: HN1V01H T O SH IB A TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1V 0 1 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. . • • • High Capacitance Ratio : C IV / C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin)
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HN1V01H
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38AN
Abstract: No abstract text available
Text: HN1V01H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1V 0 1 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. High Capacitance Ratio : C1V/C8V= 19.5 Typ. High Q : Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin) Low Voltage Operation : V r = 1~8V
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HN1V01H
38AN
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Untitled
Abstract: No abstract text available
Text: TO SH IBA HN2V02H TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS + 0.3 4.5 - 0.2 3.1 ±0 .2 □8 C'JCO to 7 to ÖÖ + 1 6 3 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range
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HN2V02H
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