MARKING E10 DIODE Search Results

smd diode a7

Abstract: marking E10 DIODE DIODE smd marking A4 smd diode A4 DIODE smd marking A1 jedec sot-23 6 lead SMD MARKING CODE A4 SOT 23 A7 diode SMD 6 PIN A4 marking code marking a7 sot-23
Contextual Info: BAW56, BAV70, BAV99 225mW SMD Switching Diode Small Signal Diode SOT-23 A Features F B E —Fast switching speed —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate —Pb free version and RoHS compliant

smd diode code A4

Abstract: smd code A7 smd diode a7 smd diode marking A7 SOT-23 DIODE smd marking A4 a4 sot-23 smd diode A4 smd sot23 A4 A7 SMD sot23 marking E10 DIODE
Contextual Info: BAW56, BAV70, BAV99 225mW SMD Switching Diode Small Signal Diode SOT-23 A Features F B E —Fast switching speed —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate —Pb free version and RoHS compliant

marking E10 DIODE

Abstract: SOD-323F S3 marking DIODE smd diode code s3 smd diode code b1 1N4148WS 1N4448WS 1N914BWS smd diode S2 marking code s1 SMD diode
Contextual Info: 1N4148WS/1N4448WS/1N914BWS 200mW High Speed SMD Switching Diode Small Signal Diode SOD-323F B Features C A —Fast switching device Trr<4.0nS —Surface device type mounting D —Moisture sensitivity level 1 —Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Contextual Info: SPA547-01 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 10.5 kV / 1.5A Designer’s Data Sheet FEATURES: • •

marking E10 DIODE

Abstract: DIODE MARKING 9X SPA547-01 helicoil unf marking E11 DIODE diode marking e8
Contextual Info: SPA547-01 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HYPERFAST HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 10.5 kV / 1.5A Designer’s Data Sheet FEATURES:

Contextual Info: RB495D 40V, 350mA, SMD Schottky Diode Small Signal Diode SOT-23 3 A 1 2 F B Features E C ­Epitaxial planar die construction G D ­Surface device type mounting H ­Mositure sensitivity level 1 ­Matte tin Sn lead finishe with Nickel (Ni) underplate ­Pb-free version and RoHS compliant

SOT23 D3Q

Abstract: marking E10 DIODE marking code B0 SMD diode smd part marking b1 sot DIODE SMD CODE MARKING 35 SOT D3Q smd schottky diode
Contextual Info: RB495D 40V, 350mA, SMD Schottky Diode Small Signal Diode SOT-23 3 A 1 2 F B Features E C —Epitaxial planar die construction G D —Surface device type mounting H —Mositure sensitivity level 1 —Matte tin Sn lead finishe with Nickel (Ni) underplate —Pb-free version and RoHS compliant

E13 diode

Abstract: SPA548-01
Contextual Info: SPA548-01 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 5.5 kV / 2A Designer’s Data Sheet FEATURES: • • •

marking E13 diode

Abstract: marking E10 DIODE SPA548-01 E5 marking
Contextual Info: SPA548-01 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 5.5 kV / 2A Designer’s Data Sheet FEATURES: • • •

Contextual Info: Doc No. TT4-EA-12401 Revision . 2 Product Standards Switching Diode DA6X106U0R DA6X106U0R Silicon epitaxial planar type Unit: mm 2.9 For high speed switching circuits 0.5 • Features 6 5 4 1 2 3 1.5 2.8  Short reverse recovery time trr  Low terminal capacitance Ct

Contextual Info: Doc No. TT4-EA-12528 Revision. 3 Product Standards Switching Diode DA4X106U0R DA4X106U0R Silicon epitaxial planar type Unit: mm 2.9 0.95 (0.95) For small current rectification 4 • Features 3 1.5 2.8  Short reverse recovery time trr  Low terminal capacitance Ct

TSM2323

Abstract: TSM2323CX TSM2323CXRF TSM232
Contextual Info: TSM2323 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 39 @ VGS = -4.5V -4.7 52 @ VGS = -2.5V -4.1 68 @ VGS = -1.8V -2.0 Block Diagram ● Advance Trench Process Technology ●

Contextual Info: 1SS269 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS269 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS + 0.5 2.5 “ 0.3 FEATURES : • Small Package. • Small Total Capacitance : CT = 1.2pF Max. • Low Series Resistance : rs = 0.6D (Typ.) 1.5- a i 5

D2502

Abstract: ECSP1006-2 ESGD100
Contextual Info: Ordering number : ENN7320A ESGD100 GaAs Schottky Barrier Diode ESGD100 X Band, Mixer, Modulator Applications Features Environmentally-considered chip scale package. Less parasitic components, conversion loss. unit : mm 1321A [ESGD100] Type No. Indication Top view

Contextual Info: Ordering number : ENN7320 ESGD100 GaAs Schottky Barrier Diode ESGD100 X Band, Mixer, Modulator Applications Features • • Package Dimensions Environmentally-considered chip scale package. Less parasitic components, conversion loss. unit : mm 1321 [ESGD100]

Contextual Info: Doc No. TT4-EA-11567 Revision. 4 Product Standards Zener Diode DZ2J3900L DZ2J3900L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz

Contextual Info: Doc No. TT4-EA-11540 Revision. 3 Product Standards Zener Diode DZ2J0330L DZ2J0330L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz

Contextual Info: Doc No. TT4-EA-11562 Revision. 4 Product Standards Zener Diode DZ2J2400L DZ2J2400L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz

Contextual Info: Doc No. TT4-EA-11557 Revision. 3 Product Standards Zener Diode DZ2J1500L DZ2J1500L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz

Contextual Info: Doc No. TT4-EA-11792 Revision. 3 Product Standards Zener Diode DZ2S0750L DZ2S0750L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J075 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6  Excellent rising characteristics of zener current Iz

Contextual Info: Doc No. TT4-EA-13615 Revision. 4 Product Standards Zener Diode DZ2S1000L DZ2S1000L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J100 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6  Excellent rising characteristics of zener current Iz

Contextual Info: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode

Contextual Info: Doc No. TT4-EA-11840 Revision. 3 Product Standards Zener Diode DZ2S3600L DZ2S3600L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J360 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6  Excellent rising characteristics of zener current Iz

Contextual Info: Doc No. TT4-EA-11794 Revision. 3 Product Standards Zener Diode DZ2S0910L DZ2S0910L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J091 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6  Excellent rising characteristics of zener current Iz