MARKING EB 202 TRANSISTOR Search Results

marking EB 202 transistor

Abstract: EB 203 D
Contextual Info: Central CMPT2484 Sem iconductor Corp. NPN SILICON LOW NOISE TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CM PT2484 type is an N PN silicon low noise transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise

marking EB 202 transistor

Abstract: 2SC4672 transistor 2SC4672 ZE TRANSISTOR MARKING
Contextual Info: 2SC4672 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package 2SC4672 (M PT3) +0.2 4 .5 —0 1 • • • package marking: 2SC4672; DK-fr, where ★ is hFE code 1.6 * 0.1 zE L if low collector saturation voltage,

marking H3t sot23

Abstract: BSR15 marking T7
Contextual Info: r z z SCS-THOM SON Ä T# MDœmiICTfôMIl] BSR15 BSR16 SMALL SIGNAL PNP TRANSISTORS Type Marking BSR15 T7 BSR16 T8 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION

Contextual Info: Temic BFP181T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features

Contextual Info: DIL BSR20 BSR20A SILICON P-N -P HIGH-VOLTAGE TRANSISTORS P-N -P high-voltage small-signal transistors Marking BSR20 = T35 BSR20A = T36 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 038 0.70 0.50 3 Pin configuration 1 = BASE 2 = EMITTER 3 = CO LLECTOR

EN4495

Abstract: 2SA1338 2SC3392 FP202 Collector 5v npn TRANSISTOR 2097a fp2021 marking 202
Contextual Info: Ordering number:EN4495 FP202 PNP/NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications Features Package Dimensions • Composite type with 2 transistors PNP and NPN contained in one package facilitating high-density mounting. · The FP202 is formed with a chip being equivalent to

41 BF transistor

Abstract: transistor BF 235 transistor bf 254 869S transistor marking code 41 BF BF869S transistor bf 871s BF871S bf869s Transistor transistor bf 44
Contextual Info: a l TELEFUNKEN ELECTRONIC 17E D • a^EDD^b 000^427 4 ■ AL6G BF 869 S BF 871 S IN electronic Cr»«tiv« Technologies r-33-öS* Silicon NPN Epitaxial Planar RF Transistors Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage

marking 202

Abstract: fp104
Contextual Info: Ordering number : E N 4655 FP104 No. 4655 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC/DC Converter Applications F eatu res • Composite type with 2 devices PNP transistor and Schottky barrier diode contained in one package,

fp104

Contextual Info: Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2devices PNP transistor and Shottky barrier diode contained in one package,

marking EB 202 diode

Abstract: 2SA1729 FP104 SB05-05CP marking EB 202 transistor EN4655
Contextual Info: Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2devices PNP transistor and Shottky barrier diode contained in one package,

2SD1164Z

Abstract: 2SD1164-Z MEI-1202
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SD1164-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2S D 1164-Z is designed fo r Low Frequency A m p lifie r and PACKAGE DIMENSIONS in millimeters S w itching, especially in Hybrid Integrated Circuits. FEATURES •

2SC3773

Abstract: SANYO SS 1001
Contextual Info: SANYO SEMICONDUCTOR CORP 25E D 7 ‘1c1 7 0 7 b 0 0 G b_ö3 1 T T -3/ -/7 2SC3773 NPN Epitaxial Pianar Silico n Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1946B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band

PA 2027A

Abstract: 2SA1624 t-31-21 Sanyo A 3121 IC
Contextual Info: SANYO SEMICONDUCTOR CORP 32E » 7Tì707Li ODOflflS? S T ~ 3 / - 2 - f P N P Epitaxial Planar S ilico n Transistor Color T V Chroma Output, High-Voltage Driver Applications 3I03A F e a tu re s • High breakdown voltage • Small reverse transfer capacitance and excellent high frequency characteristics

pa 2030a

Abstract: J1 3007-1 120C 2SC4365 IS211 2T transistor surface mount transistor et 454 I PT 0 0 7N 0 6 N
Contextual Info: SANYO SEMI CONDUCTOR CORP 2 2E D • 7^70713 O ODb ö b l Û T-3N7 2SC4365 * 2018A 3007 Features • Low-voltage operation N P N Epitaxial Planar Silicon Transistor V/U M IX, OSC, Low-Voltage High-Frequency Amp Applications fT=3.0GHz typ V oe = 3V MAG=12dBtyp (VCE=3V,Ic=10mA)

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain •

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

transistor a719

Abstract: A719 4392 ic equivalent 2N3904
Contextual Info: MIL-S-19500/529 EL 10 May 1978 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3904 This specification is approved for use by the Electronics Command, Department of the Army, and is available for use by all Departments and Agencies of the Department of Defense.

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the

928 606 402 00

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low

NEC IC D 553 C

Abstract: nec 2741 702 mini transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.

transistor 1211

Abstract: transistor su 312 transistor zo 109
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

3563 1231

Abstract: transistor NEC B 617 nec d 1590
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain

Contextual Info: PIC10F200/202/204/206 6-Pin, 8-Bit Flash Microcontrollers Devices Included In This Data Sheet: • PIC10F200 • PIC10F204 • PIC10F202 • PIC10F206 Low-Power Features/CMOS Technology: • Operating Current: - < 175 A @ 2V, 4 MHz, typical • Standby Current:

IC SEM 2105

Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low