2SA1338 Search Results

M338

Abstract: J300j nj037 2SA1338 2SC3392 marking al WA1 marking M338 NPN
Contextual Info: Ordering num ber:EN 1 4 2 1 A 2SA1338/2SC3392 No.1421A SANYO PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications I Features • • • • Adoption of FBET process High breakdown voltage: VCEO= - 50V Large current capacity and high fT

761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Contextual Info: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338

2SA1338

Abstract: marking ay marking al 2SC3392
Contextual Info: Ordering number:EN1421A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO= – 50V. · Large current capacitiy and high fT.

Contextual Info: Ordering num ber:EN4495 _FP202 PNP/NPN Epitaxial Planar Silicon Transistor No.4495 Push-Pull Circuit Applications F eatu res • Composite type with 2 transistors PNP and NPN contained in one package facilitating high-density mounting. • The FP202 is formed with a chip being equivalent to the 2SA1338 and a chip being equivalent to the

Contextual Info: Ordering n u m b e r:E N 4 4 9 5 SAXYO No.4495 FP202 PNP/NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications F eatu res • Composite type with 2 transistors PNP and NPN contained in one package facilitating high-density mounting. • The FP202 is formed with a chip being equivalent to the 2SA1338 and a chip being equivalent to the

2SA1338

Abstract: 2SC3392 ITR05058
Contextual Info: Ordering number : ENN1421B 2SA1338/2SC3392 SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SA1338 / 2SC3392 High-Speed Switching Applications Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO= – 50V.

2SA1338

Contextual Info: Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1338 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 Large current capacitiy and high fT. 0.55 High breakdown voltage : VCEO=-50V. +0.1 1.3-0.1 +0.1 2.4-0.1 Adoption of FBET process.

MARKING AL

Abstract: 2SA1338
Contextual Info: ¡ Ordering number EN 1 4 2 1 A J SA S.YO 2SA1338/2SC3392 N0 . 14 2 1 A PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • • • • Adoption of FBET process High breakdown voltage: VCEO= - 50V Large current capacity and high fi>

XM21A

Abstract: C-160304 2SA1338 2SC3392 A1338 00B7
Contextual Info: SANYO SEMICONDUCTOR CO RP 22E D 2SA1338, 2SC3392 • 7 ‘n7Q7fci 0 Q 0 7 0 4 Ö Q ■ T-37-15 T-3S-U P N P /N PN Epitaxial Planar Silicon Transistors 2018A High-Speed Switching Applications Features • Adoption of FBET process • High breakdown voltage; VCEO= ->50V

2SA1338

Abstract: 2SC3392 ITR05058
Contextual Info: Ordering number:ENN1421B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO= – 50V. · Large current capacitiy and high fT. · Ultrasmall-sized package permitting sets to be smallsized, slim.

2SA1146

Abstract: 2SB1200 2SB764 2SB793 2SB605 2SB507 2SB744 NEC 2SA874 2SB1185 2SB1576
Contextual Info: - Si % Type No. tt € Manuf. = m SANYO ill TOSHIBA 2 SB 1043 □— A 2SB764 2SB 1044 □— A 2SA1705 2SB 1045 U 2SA1415 2SA1200 2SB 1046 B ±L 2SA1415 2SA1384 2SB 1047 ±L 2SA1415 2SB1200 2SB 1048 i 2SB1126 T 2SA1783 T 2SA1702 2SB 1051 □— A 2SA1338

Contextual Info: 2SA1338AL6 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)0.1uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400 h(FE) Max. Current gain.

Contextual Info: Product specification 2SA1338 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 Large current capacitiy and high fT. 0.55 High breakdown voltage : VCEO=-50V. +0.1 1.3-0.1 +0.1 2.4-0.1 Adoption of FBET process. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Ultrasmall-sized package permitting sets

Contextual Info: sa \ yo Tables of hFE TR and lDSS(FET)of surface mounting devices and how to indicate type No. (1) General Specification (Package : MCP,CP) S:2SA1338/2SC3392 only SMC P hasno i n d i c a t i o n of h FE an d IDSS cla ssifi c a t i o n . H o w to i n d i c a t e type No.

2SA1338

Abstract: 2SC3392 ITR05058 ITR05059
Contextual Info: 注文コード No.N 1 4 2 1 A 2SA1338 / 2SC3392 三洋半導体データシート ※半導体ニューズ No.1421 とさしかえてください。 2SA1338 / 2SC3392 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高速スイッチング用

Contextual Info: Ordering number : ENN1421B 2SA1338/2SC3392 SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SA1338 / 2SC6080 High-Speed Switching Applications Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO= – 50V.

kw2j

Abstract: MARKING 2J0 2sc2960 a-y
Contextual Info: SAfÊYO H IG H -S P E E D SW IT C H IN G A P P L IC A T IO N S Siali Signal Transistors F e a t u r e s Case Outlines (unit¡an) SANYO :SMCP SANYO :MCP *High switching speed *High breakdown voltage * Low collector saturation voltage *Very small-sized package permitting a set to be made smaller

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SA1317

Abstract: 2SA1348 2SC3331 2sc3345 2SC3398 2SA1313 2SA1314 2SA1315 2SA1316 2SA1319
Contextual Info: - 30 Ta=25°C, * £ P i J T c = 2 5 QC m £ ffl £ ^ VcBO VcEO (V) (V) Ic(DC) (A) Pc* IcBO (max) (W) (W) ( uh) LF A/SW -50 - 50 -0.5 0.15 PA/^hn*' -20 - 10 -2 0. 5 PA/PSW -80 - 80 -2 0.9 2SA1316 SS SS ss ss LF LN A -80 - 80 -0.1 2 S A 1317 ZM LF A - 60

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

BSW45A

Abstract: LOW-POWER SILICON PNP p60n 2SA1299E BC212BP
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 BC212LA BCW86 BCW86 BCW86 2SB637K 2SB710A 2SA891 2SA891 2SA891 2SB621A >= Manufacturer V(BR)CEO fr (V) (Hz) See Index Micro Elecs Semi Inc Advncd Semi

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SA1047

Contextual Info: SA%VO CP Chip Pack Transistors We have a full lineup of Chip Pack (package: CP) transistors that are very small-sized, can be applied to various uses, and excel in reliability, quality stability. They are the same except collector dissipation (PC max), as those placed in the

2SC3431

Abstract: 2SC3402 2SC3381 2SC3379 2SC3382 2SC3383 2SC3390 2SC3391 2SC3392 2SC3393
Contextual Info: - 156 - MX'Ëtë Ta=25°C, *EPÍáTc=25cC m % tt VcBO « (V) 2SC3379 H S 2SC3380 H i HF PA VcEO (V) IC(DC) (A) 20 Pc m Pc* (W) ICBO (max) (//A) (W) 1.5 10 m ft fé t t (Ta=25'C) hF E Vc b (V) (min) (max) , > , , > (max) (V) Ic / I e (A) VcE (V) [*EPfátypíÍ]