MARKING ET DIODES Search Results

marking code 68W

Abstract: marking code 68W sot 68W SOT MARKING 68W SOT-23 MARKING 68W 68w diode
Contextual Info: SIEMENS BAT 68W Silicon Schottky Diodes Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching BAT 68-04W BAT68-05W BAT68-06W »1/kl C1/C2 R _ 0 _ "ET T lT Tj Type Marking Ordering Code Pin Configuration BAT 68-04W

15c sot 23 marking

Abstract: VR7A marking 15c
Contextual Info: SIEMENS BAT 17W Silicon Schottky Diodes Preliminary data • For mixer applications in the VHF/UHF range • For high-speed switching BAT 17-04W BAT 17-05W C l/M CI/C2 J *L -EL "0 EJ [J BAT 17-06W ET Type Marking Ordering Code Pin Configuration BAT 17-04W

marking code 68W

Contextual Info: SIEMENS BAT 68W Silicon Schottky Diodes Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching BAT 68-04W BAT68-05W CI/A2 A t/M FL _0_ U BAT68-06W C1/C2 HT • n HT U ET Type Marking Ordering Code Pin Configuration BAT 68-04W

sy 320 diode

Contextual Info: P h ilip s Se m ico n d u cto rs P re lim in sry specification Schottky barrier diodes FEA T U R ES BAT54W series Q U IC K R E F E R EN C E DATA • Ultra-fast switching speed • Low forward voltage SY M B O L PA RAM ET ER CO N DITIO N S UNIT MAX. Per diode

diode 698

Abstract: DIODE REDRESSEMENT diodes redressement thomson Diodes de redressement
Contextual Info: BYV 10-20 —►B YV 10-4 THOMSON SEMICONDUCTORS SCHOTTKY RECTIFIER .DIODES, DIODES DE REDRESSEMENT'! SCHOTTKY . *»? : -. 'o - 1 A*/Tamb - 80°C Metal to atficon rectifier diodes in glees case featuring very low forward voltage drop and fast recovery time, intented for low voltage switching

diode MARKING CODE A9

Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Contextual Info: 4. List of Principal Characteristics of Diodes 4. List o f Principal C h a r a c t e r istic s o f D io d e s * S c h o ttk y b a r r i e r diode. 59 4. List of Principal Characteristics o f Diodes U nit : mm u se S-M IN I U SM SS M 1 1 125*8:i s 5 H- pl *il"

diodes B2V

Abstract: B50C marking 27.A STG-65 Thomson BZV BZV27 general semiconducteur thomson diodes
Contextual Info: L S G | s^c D S -T H O M S O N Q 7^23? aooasbD □ THOMSON-C5F * BZV27,A — BZV31,A DIVISION SEMICONDUCTEURS VOLTAGE REFERENCE DIODES TEMPERATURE COMPENSATED ^ D IO D E S D E R É F É R E N C E D E T E N S IO N ! C O M P E N S É E S E N T E M P É R A T U R E )

F600M

Abstract: S08230 l32 sot23 hp 3080 diode MARK, g5 sot23
Contextual Info: ¥J>0%. HEWLETT ft "Em PACKARD Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodea Optimized fo r Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface M ount SOT-23

Contextual Info: BZT52-B13US Surface Mount Silicon Zener Diodes VOLTAGE 13.7 V Features  Planar Die Construction  200mW Power Dissipation  Ideally Suited for Automated Assembly Process  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std.

BAX12

Abstract: BAY85S MARKING D53 marking IAY marking JB diode BAV70 BAV74 BAW56 BAT18DK Thomson-CSF diodes
Contextual Info: general purpose and switching diodes 1* diodes d'usage général et de com m utation Types •f AV VF @ lF |R @ V R V RM* (V) (mA) max (V) (mA) max (nA) (V) BAL74 50 70 1 100 100 50 BAL 99 70 70 1,3 100 2500 70 BAR 74 SD 914 BAS 16 SD BAX12 50 75 75 90(3)

SI 1050 GH

Abstract: GH-1E GU-1C GU-1Z GU-3C MARKING GU ES01 ES01A ES01F ES01Z
Contextual Info: SANKEN ELECTRIC U S A H E Fast Recovery Diodes D I ? 741 ODDDI ET fi | • Io : 0 .3 -1 .2 A IVrm: 100—1500V " 0 I- O I T RH/ES/RS/RH/GU/RU/GH/EU Io A V rm (V) V rsm (V) Type N o \ ^ RH 1Z RH 1 RH 1A RH 1B RH 1C ES01Z ES01 ES01A ES01F ES 1Z ES 1 ES 1A

Zener diode 83C 12

Abstract: diode zener 6V8 BZX C 55 8ZX83C BZX marking diode diode zener BZX 70 C 10 Zener diode 83C 24 bzx 85 zener zener diode b2x BZX83C diode zener 6V8 BZX C 83
Contextual Info: S G S— THOMSON _ SIC D £ O THOMSON-CSF DIV IS IO N S EM IC O N DUCTE UR S Q0Q247M 7 BZX83C2V4 — BZX83C75 - • ZENER DIODES 5 9C 0 2 4 7 4 D T ~ D ' I f D IO D E S Z E N E R P tot = 600 m W 500 mW hermetically sealed glass silicon Zener diodes offering the following advantages :

ST03D-170

Abstract: ST03D170 J3 DIODE ST U180 n 10 q Zener Diode marking 3a st03d
Contextual Info: Power-Clamper Axial Device Zener Diodes with Fast Recovery Diode • f t M U ! OUTLINE S T 03D -170 Package : AX10 Unit:mm & Weight 0.65 g 170V 300W O ftft D -©■ I 1 26.5 7 P <¿>4.4 26.5 Feature ° - ■ Power Zener Diodes with FRD

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

IN973b

Abstract: 1N4370A IN746A IN967B 1N892 IN4372 IN992 1N744 IN970B 1N857
Contextual Info: S^C D 1 . 7 ^ 2 3 7 S G S —THOMSON . O : T H O M S O N -C S F ' i - Z — 1 N 9 5 7 B DIVISION SEMICQNDUCTEUBS— 59C aü02m5 02415 — i 1 N 9 9 2 B ZENER DIODES DIODES ZENER P to t = 400 m W 6Æ V< VCTnom < 200V 400 mW hermetically sealed glass silicon Zener

Ceramic Capacitors

Abstract: sic-safco capacitor capacitor sic-safco Sic-Safco tableau des boitiers cms FIRADEC condensateur chimique 1000 uf EUROFARAD smd ceramic capacitor Microspire varistance
Contextual Info: 082 Paris Colombes St Nazaire Illange Lagny Marmoutier EUROFARAD Siège social / Headquarters 93, rue Oberkampf F - 75540 PARIS CEDEX 11 Tél. : +33 0 1 49 23 10 00 E-mail : info @ eurofarad.com www.eurofarad.com FIRADEC Casablanca Usines / Plants 23, rue Jeanne d'Arc

Contextual Info: SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0.2 2 .8 -0 3 + 0.2 . HN2D01F is composed of 3 independent diodes, . T.ow Forward Voltage 1.6 - 0.1 : Vp=0.98V Typ. D6 . Fast Reverse Recovery Time : trr= 1.6ns (Typ.) . Small. Total Capacitance

Contextual Info: Surface Mount Zener Diodes 1.0 W Device Marking Code Nominal Zen. Vltg. @ IZT Test Current VZT V 6.8 7.5 8.2 9.1 10.0 11.0 12.0 13.0 15.0 16.0 18.0 20.0 22.0 24.0 27.0 30.0 33.0 36.0 39.0 43.0 47.0 51.0 56.0 62.0 68.0 75.0 82.0 91.0 100.0 Part No. SMAJ4736A

data sheet for all smd components

Abstract: SOD123F transistor smd code marking 420 PMEG3010EH PMEG3010EJ PMEG3010ET SOT23 DIODE marking CODE AV 006aaa436
Contextual Info: PMEG3010EH; PMEG3010EJ; PMEG3010ET 1 A very low VF MEGA Schottky barrier rectifiers Rev. 04 — 20 March 2007 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifiers with an

smd diode MARKING F6

Abstract: smd diode F6 DIODE F7 SMD smd marking H6 Diode smd f6 SMD F6 DIODE diode smd ED 68 diode smd ED 84 smd diode E7 smd diode h9
Contextual Info: Diodes SMD Type Zener Diodes BZX585 Series Features Total Power Dissipation: Max. 300mW Two Tolerance Series: 2% and 5% Working Voltage Range: Nom. 2.4 to 75V Absolute Maximum Ratings Ta = 25 Parameter Total Power Dissipation Symbol Rating Unit Ptot 300

Power DIODES, toshiba

Abstract: ZA8-2 01ZA8 toshiba toshiba marking Information
Contextual Info: TOSHIBA 01ZA8.2 TOSHIBA DIODES FOR PROTECTING AGAINST ESD EPITAXIAL PLANAR TYPE 01 Z A 8 . 2 Unit in mm DIODES FOR PROTECTING AGAINST ESD • 1.6 ± 0.1 0.85 ±0.1 Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the

Contextual Info: SIEMENS BAS 125W Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAS 125-04W BAS 125-06W A1/A2 JZL III ET Cl C2 CHMT1I

smd diode a9 SOT23

Abstract: diode MARKING CODE A9 diode MARKING CODE A9 sot23 data sheet for all smd components transistor smd code marking 420 PMEG2010EH PMEG2010EJ PMEG2010ET smd diode marking AH a9 marking schottky diode sot23
Contextual Info: PMEG2010EH; PMEG2010EJ; PMEG2010ET 1 A very low VF MEGA Schottky barrier rectifiers Rev. 04 — 20 March 2007 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifiers with an

sot23-4 marking al

Abstract: data sheet for all smd components transistor smd code marking 420 PMEG4010EH PMEG4010EJ PMEG4010ET AB marking code smd schottky diode
Contextual Info: PMEG4010EH; PMEG4010EJ; PMEG4010ET 1 A very low VF MEGA Schottky barrier rectifiers Rev. 04 — 21 March 2007 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifiers with an