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HN2D01F Price and Stock

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Toshiba America Electronic Components HN2D01FTE85LF DIODE ARRAY GP 80V 80MA SC-74
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	HN2D01FTE85LF	Digi-Reel	6,987		1	1 $0.33 10 $0.224 100 $0.1795 1000 $0.11739 10000 $0.11739	Buy Now
	HN2D01FTE85LF	Cut Tape	6,987		1	1 $0.33 10 $0.224 100 $0.1795 1000 $0.11739 10000 $0.11739	Buy Now
	HN2D01FTE85LF	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.07	Buy Now
Mouser Electronics	HN2D01FTE85LF		4,954			1 $0.33 10 $0.224 100 $0.169 1000 $0.113 10000 $0.07	Buy Now
Toshiba America Electronic Components HN2D01FU(TE85L,F) DIODE ARRAY GP 80V 80MA US6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN2D01FU(TE85L,F)	Cut Tape			1	1 $0.51 10 $0.51 100 $0.51 1000 $0.51 10000 $0.51	Buy Now
Quest Components	HN2D01FU(TE85L,F)		2,276			1 $0.815 10 $0.815 100 $0.815 1000 $0.326 10000 $0.326	Buy Now
EBV Elektronik	HN2D01FU(TE85L,F)			13 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components HN2D01FU,LF Small Signal Switching Diodes
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	HN2D01FU,LF		1,528			1 $0.37 10 $0.282 100 $0.17 1000 $0.111 10000 $0.083	Buy Now
Toshiba America Electronic Components HN2D01FU,LF(B HN2D01FU,LF(B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	HN2D01FU,LF(B		2,900		618	1 - 10 - 100 - 1000 $0.1184 10000 $0.1149	Buy Now
Quest Components	HN2D01FU,LF(B		2,320			1 $0.71 10 $0.71 100 $0.71 1000 $0.213 10000 $0.142	Buy Now
Toshiba America Electronic Components HN2D01F(TE85L,F) Diode Switching 85V 0.08A 6-Pin SM T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	HN2D01F(TE85L,F)		2,861		304	1 - 10 - 100 - 1000 $0.172 10000 $0.172	Buy Now
Chip One Stop	HN2D01F(TE85L,F)	Cut Tape	2,861	0 Weeks, 1 Days	5	1 - 10 $0.316 100 $0.172 1000 $0.112 10000 $0.0983	Buy Now

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HN2D01F Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
HN2D01F	Toshiba	Diode, Ultra High Speed Switching Application	Original	PDF
HN2D01F	Toshiba	DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)	Scan	PDF
HN2D01F	Toshiba	DIODE	Scan	PDF
HN2D01FTE85LF	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 80V 80MA SM6	Original	PDF
HN2D01FU	Toshiba	HN2D01 - DIODE 0.08 A, 3 ELEMENT, SILICON, SIGNAL DIODE, 1-2T1C, 6 PIN, Signal Diode	Original	PDF
HN2D01FU	Toshiba	Diode, Ultra High Speed Switching Application	Original	PDF
HN2D01FU	Toshiba	Japanese - Diodes	Original	PDF
HN2D01FU	Toshiba	Diodes	Original	PDF
HN2D01FU	Unknown	The Diode Data Book with Package Outlines 1993	Scan	PDF
HN2D01FU	Toshiba	DIODE	Scan	PDF
HN2D01FU	Toshiba	Ultra High Speed Silicon Epitaxial Planar Type Diode	Scan	PDF
HN2D01FU(TE85L,F)	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V US6	Original	PDF

HN2D01F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • HN2D01F is composed of 3 independent diodes. + 0.2 2.8 - 0.3 • Low Forward Voltage 1 . 6 - 0.1 • Fast Reverse Recovery Time : trr= 1.6ns Typ.	OCR Scan	HN2D01F HN2D01F 961001EAA2'	PDF
Contextual Info: SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0.2 2 .8 -0 3 + 0.2 . HN2D01F is composed of 3 independent diodes, . T.ow Forward Voltage 1.6 - 0.1 : Vp=0.98V Typ. D6 . Fast Reverse Recovery Time : trr= 1.6ns (Typ.) . Small. Total Capacitance	OCR Scan	HN2D01F HN2D01F	PDF
HN2D01F Contextual Info: HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit in mm z HN2D01F is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance	Original	HN2D01F HN2D01F	PDF
HN2D01F Contextual Info: HN2D01F 東芝ダイオードシリコンエピタキシャルプレーナ形ダイオード HN2D01F ○ 超高速スイッチング用 z z z z 単位: mm 独立した 3 個のダイオードを内蔵順方向特性が良い。 : VF 3 = 0.98V (標準)	Original	HN2D01F 100mA HN2D01F	PDF
HN2D01FU Contextual Info: HN2D01FU 東芝ダイオードシリコンエピタキシャルプレーナ形ダイオード HN2D01FU ○ 超高速スイッチング用 z z z z 単位: mm ウルトラスーパーミニ 6 端子パッケージに 3 素子を内臓しています。順方向特性が良い。	Original	HN2D01FU 100mA HN2D01FU	PDF
HN2D01F Contextual Info: HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit in mm l HN2D01F is composed of 3 independent diodes. l Low forward voltage : VF 3 = 0.98V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance	Original	HN2D01F HN2D01F	PDF
Contextual Info: SILICON EPITAXIAL PLANAR TY P E HN2D01FU U LTRA HIGH SPEED SW IT C H IN G A PPLIC A TIO N . • • • • HN2D01FU is composed of 3 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance PIN A S S IG N M E N T TOP V IEW 6 5 1rQ i X 1 independent diodes.	OCR Scan	HN2D01FU HN2D01FU 100mA if--H05 01/iF	PDF
HN2D01FU Contextual Info: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application l HN2D01FU is composed of 3 independent diodes. l Low forward voltage : VF 3 = 0.98V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.)	Original	HN2D01FU HN2D01FU 100mA	PDF
HN2D01FU Abstract: HN2D01 1q31 Contextual Info: TOSHIBA HN2D01 FU T O S H IB A D IO D E SILICO N EPITA X IA L PLA N A R TYPE H N 2 D 0 1 FU ULTRA H IG H SPEED S W IT C H IN G A P P L IC A T IO N . U nit in mm • HN2D01FU is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ.	OCR Scan	HN2D01 HN2D01FU HN2D01FU 1q31	PDF
HN2D01F Contextual Info: HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit in mm HN2D01F is composed of 3 independent diodes. Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance	Original	HN2D01F HN2D01F	PDF
Contextual Info: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • HN2D01F is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ. • Small Total Capacitance	OCR Scan	HN2D01F HN2D01F 961001EAA2'	PDF
HN2D01F Abstract: lu2b Contextual Info: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. • +0.2 2.8 - 0.3 +0.2 1.6-0.1 H N 2D01F is composed of 3 independent diodes. • Low Forward Voltage • F a st Reverse Recovery Time : trr = 1.6ns Typ.	OCR Scan	HN2D01F HN2D01F 961001EAA2' lu2b	PDF
Contextual Info: TOSHIBA HN2D01 FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 2 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • HN2D01FU is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ. •	OCR Scan	HN2D01 HN2D01FU	PDF
diode Z47 Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode Contextual Info: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352	OCR Scan	HN2D01FU HN2D02FU OT-23MOD) 02CZ5 diode Z47 z43 diode Z5.6 Z3.3 S360 DIODE diode Z27 S368 diode zener z6 1s diode	PDF

Contextual Info: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit: mm Ultra High Speed Switching Application HN2D01FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance	Original	HN2D01FU HN2D01FU	PDF
Contextual Info: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application HN2D01FU is composed of 3 independent diodes. Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance	Original	HN2D01FU HN2D01FU 100mA	PDF
1213-00N Abstract: HN2D01F toshiba diode 3D Contextual Info: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • HN2D01F is composed of 3 independent diodes. Low Forward Voltage : Vp 3 = 0.98V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.)	OCR Scan	HN2D01F HN2D01F 961001EAA2' 1213-00N toshiba diode 3D	PDF
HN2D01FU Contextual Info: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application HN2D01FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance	Original	HN2D01FU HN2D01FU	PDF
HN2D01FU Contextual Info: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application z HN2D01FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)	Original	HN2D01FU HN2D01FU	PDF
Contextual Info: TOSHIBA HN2D01FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H mN ? mnm r n i F 11 'm • ■ ULTRA HIGH SPEED 5WITCHING APPLICATION. Unit in mm HN2D01FU is composed of 3 independent diodes. TT Low Forward Voltage A A m T /m • Fast Reverse Recovery Time : trr = 1.6ns Typ.	OCR Scan	HN2D01FU HN2D01FU 01//F	PDF
HN2D01F Contextual Info: HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit in mm z HN2D01F is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance	Original	HN2D01F HN2D01F	PDF
Contextual Info: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE h N1 n n 1 F • ■ m 'm mmr w ■ ■ Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. • • • • HN2D01F is composed of 3independent diodes. Low Forward Voltage : V f 3 = 0.98V (Typ.)	OCR Scan	HN2D01F HN2D01F a--25 961001EAA2'	PDF
1S1585 Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241 Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80	OCR Scan	OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241	PDF
2N3904 331 transistor Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 2SC1815(L) — 2SC2995 — * 2N3904 — 2SA1245 167 2SC1923 — 2SC2996 266 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272	OCR Scan	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737	PDF

HN2D01F Search Results

HN2D01F Price and Stock

Toshiba America Electronic Components HN2D01FTE85LF

Toshiba America Electronic Components HN2D01FU(TE85L,F)

Toshiba America Electronic Components HN2D01FU,LF

Toshiba America Electronic Components HN2D01FU,LF(B

Toshiba America Electronic Components HN2D01F(TE85L,F)

HN2D01F Datasheets (12)

HN2D01F Datasheets Context Search

HN2D01F

HN2D01F

HN2D01FU

HN2D01F

HN2D01FU

HN2D01FU

HN2D01F

HN2D01F

diode Z47

1213-00N

HN2D01FU

HN2D01FU

HN2D01F

1S1585

2N3904 331 transistor