MARKING F INFINEON Search Results

Contextual Info: BFR949T NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BFR94

Contextual Info: BFR949T NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BFR949T

Abstract: SC75 GMA marking
Contextual Info: BFR949T NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

smd diode 319

Contextual Info: BSP 319 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated •^GS .h = 1-2 - 2 0 V Type Vbs b f f DS(on) Package Marking BSP 319 50 V 3.8 A 0.07 £i SOT-223 BSP 319 Type BSP 319 Ordering Code Q67000-S273

TRANSISTOR SMD MARKING CODE kd

Contextual Info: BSP 123 Infineon t echnologi es SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •W = a8 -2 0V Type Vbs b f lDS on) Package Marking 0.38 A 6n SOT-223 BSP 123 BSP 123 100 V Type Ordering Code Tape and Reel Information

Contextual Info: BFP181R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R

BFP181R

Contextual Info: BFP181R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R

BFP181R

Contextual Info: BFP181R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R

Contextual Info: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B

Contextual Info: BFP 181R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 181R

GMA marking

Abstract: IC 2272
Contextual Info: BFP 182R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 182R

SPICE 2G6

Contextual Info: BFP183R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA
fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs

transistor marking code wts

Abstract: transistor marking code wts 15
Contextual Info: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs

G1026

Contextual Info: BFR193W NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BFR193W

Abstract: VSO05561
Contextual Info: BFR193W NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

transistor marking RHs

Abstract: G1816
Contextual Info: BFP 183R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA
fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 183R

BFP182R

Abstract: TRANSISTOR BI 187
Contextual Info: BFP182R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP182R RGs

BFP183R

Abstract: transistor marking RHs
Contextual Info: BFP183R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA
fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs

DIN 6784

Abstract: BCR162F SOT23 WU BCR108T BCR162 BCR162L3 BCR162T E6327 SC75
Contextual Info: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B

Contextual Info: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B

Contextual Info: BFP182R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP182R RGs

Contextual Info: BFP182R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP182R RGs

Transistor BFR 38

Contextual Info: BFR 193 NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

1.0037

Abstract: BFP193 VPS05178
Contextual Info: BFP193 NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers 4
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking