MARKING FE1 Search Results

DP500

Abstract: Transistor DN500
Contextual Info: DP500 Semiconductor PNP Silicon Transistor Description • Suitable for low voltage large current drivers • Excellent hF E Linearity • Complementary pair with DN500 • Switching Application Ordering Information Type NO. Marking Package Code DP500 DP500

DN500

Abstract: DP500
Contextual Info: DP500 Semiconductor PNP Silicon Transistor Description • Suitable for low voltage large current drivers • Excellent hF E Linearity • Complementary pair with DN500 • Switching Application Ordering Information Type NO. Marking Package Code DP500 DP500

DN500F

Abstract: DP500F
Contextual Info: DP500F Semiconductor PNP Silicon Transistor Description • Suitable for low voltage large current drivers • Excellent hF E Linearity • Complementary pair with DN500F • Switching Application Ordering Information Type NO. Marking DP500F Package Code P5

DN500P

Abstract: DP500P
Contextual Info: DP500P Semiconductor PNP Silicon Transistor Description • Suitable for low voltage large current drivers • Excellent hF E Linearity • Complementary pair with DN500P • Switching Application Ordering Information Type NO. Marking DP500P P5□ Package Code

2SA1512

Abstract: 2SC1788
Contextual Info: Transistor 2SA1512 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC1788 Unit: mm 3.0±0.2 4.0±0.2 • Features ■ Absolute Maximum Ratings Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage

2SC1788

Abstract: 2SA1512 transistor 2sa1512
Contextual Info: Transistor 2SA1512 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC1788 Unit: mm 3.0±0.2 4.0±0.2 • Features ■ Absolute Maximum Ratings Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage

Contextual Info: DP500F Se m i c o nduc t o r PNP Silicon Transistor Description • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN500F • Switching Application Ordering Information Type NO. Marking DP500F Package Code

2SB1207

Contextual Info: Transistor 2SB1207 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm 4.0±0.2 Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage VCBO –15 V Collector to emitter voltage VCEO –10 V Emitter to base voltage

2SC5343

Contextual Info: 2SC5343 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 GENERAL PURPOSE TRANSISTOR 1 3 0.97Ref. NPN Epitaxial Silicon Transistor 0.4 1.9 Collector-Emitter Voltage: V CEO =40V 0.5Ref. 0.38Ref. MINO.1 0.01-0.10 Tolerance:0.1mm Marking 0.124±0.10 2 Collector Dissipation:Pc=225mW

2SD2321

Contextual Info: Transistor 2SD2321 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 3.0±0.2 4.0±0.2 • Features marking ■ Absolute Maximum Ratings Ta=25˚C 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage

Contextual Info: DP500 Semiconductor PNP Silicon Transistor Description • Suit able for low volt age large current drivers • Excellent h FE Linearity • Com plem ent ary pair wit h DN500 • Switching Application Ordering Information Type N O. Marking Pa ck a ge Code

2SD1450

Contextual Info: Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 3.0±0.2 4.0±0.2 • Features marking Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage

2SD1450

Abstract: vebo
Contextual Info: Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 3.0±0.2 4.0±0.2 • Features marking Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage

2SD2321

Abstract: 5021H
Contextual Info: Transistor 2SD2321 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 3.0±0.2 4.0±0.2 • Features marking ■ Absolute Maximum Ratings Ta=25˚C 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage

2sa 102 transistor

Abstract: A1862 transistor 2SA 101 LA marking code PNP transistor 2sa 102 2SA series a8cc marking code V6 69 2SA1862F5 transistor PNP
Contextual Info: 2SA1862F5 Transistor, PNP Features Dimensions Units : mm • • • available in CPT F5 (SC-63) package package marking: A1862*Q, where ★ is hFE code and □ is lot number 2SA1862F5 (CPT F5) high breakdown voltage, typically 60 B V Ce o = -4 0 0 V •

2SA 016

Abstract: A1834 2SA series transistor transistor B 560
Contextual Info: 2SA1834F5 Transistor, PNP Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SA1834F5 (CPT F5) package marking: A1834^Q, where ★ is hFE code and □ is lot number low collector saturation voltage V c E ( s a t) = - 0 . 1 6 V for l c = - 4 A,

H9 transistor marking

Abstract: transistor h9
Contextual Info: 2SA1807F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A 1 80 7*Q , where ★ is hFE code and □ is lot number • 2.3 Ö u> 51 -01 r• r « H9 SS • high breakdown voltage, BVq £q = —600 V

Contextual Info: TO SHIBA TLP598B TOSHIBA PHOTOCOUPLER T I P PHOTO RELAY •; Q f t R Unit in mm TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP598B consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MQS FE1T in a

Contextual Info: TO SHIBA TLP598A TOSHIBA PHOTOCOUPLER T I P PHOTO RELAY •> Q f t A Unit in mm T E LE C O M M U N IC A TIO N D A T A ACQ UISITIO N M EASUREM ENT IN STRUM ENTATIO N The TOSHIBA TLP598A consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MQS FE1T in a

E1115

Contextual Info: MICRON SE MICONDUCTOR INC b?E D BB fe1115 4'ì OOOTHSfl STT tB MRN ADVANCE MT5LC1001 1 MEG X 1 SRAM M IC R O N SRAM 1 MEG X 1 SRAM LOW VOLTAGE • All I /O pins are 5V tolerant • High speed: 15,17,20,25, 35 and 45ns • High-performance, low-power, CMOS double-metal

B1304

Abstract: cl9100 FE050N FE150N FE150N9 UL-1950 1vw marking code
Contextual Info: Data Sheet July 1998 Lucent Technologies Bell Labs Innovations FE050N and FE150N Power Modules: dc-dc Converters; 38 Vdc to 60 Vdc Input, 5.2 Vdc Output; 50 W to 150 W Features • High efficiency: 82% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.

Contextual Info: Lucent Technologies Bell Labs Innovations FE050N and FE150N Power Modules: dc-dc Converters; 38 Vdc to 60 Vdc Input, 5.2 Vdc Output; 50 W to 150 W Features • High efficiency: 82% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.

Contextual Info: Data Sheet June 1998 Lucent Technologies Bell Labs Innovations FE150R Power Module: dc-dc Converter; 38 Vdc to 60 Vdc Input, 28 Vdc Output; 150 W Features • High efficiency: 85% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.

Contextual Info: Data Sheet June 1998 Lucent Technologies Bell Labs Innovations FE150F Power Module: dc-dc Converter; 38 Vdc to 60 Vdc Input, 3.3 Vdc Output; 99 W Features • High efficiency: 75% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.