MARKING GAAS Search Results

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package S ho 2.1 1.7 0.1 typ SFH 420 SFH 425 CL 0.9 0.7 •y0.\8my J Cathode/Colledor marking 0.12 / m|0.6 0.4 Cathode/Colledor Approx. weight 0.03 g Collector/Cathode marking

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

barcode label infineon

Abstract: SOT89 marking GA label infineon barcode SOT89 MARKING CODE 43 sot143 Marking code 53 marking code 51 sot 363
Contextual Info: GaAs Components Package Information 5 Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-143, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code Year/Month Type code EH S 46 Example 1994, June BCW 66 H Marking Layout SC-75, SOT-343, SOT-363, P-TSFP-4

M3-12H

Abstract: fujitsu gaas marking code fujitsu gaas mm catalog CAPACITOR JL 1500 SJPL 4012K 1994C
Contextual Info: PACKAGE MARKING Fujitsu's optoelectronic device has the following marking attached to each package or package case. cP 1. Manufacturer's Name: F or FUJITSU 2. Part Number: See part numbering systems 3. Serial Number: Serial number consists of Date Code and Sequence Number.

SM0805AC

Abstract: SM0805BWC SM0805UOC SM0805GC SM0805HC SM0805PGC SM0805SRC SM0805UBWC SM0805UGC SM0805UYC
Contextual Info: Chip LED Part No. Material SM0805BWC SM0805UBWC SM0805UGC SM0805PGC SM0805GC SM0805YC SM0805UYC SM0805AC SM0805UOC SM0805HC* SM0805SRC* SM0805SRC-1* SM0805URC SM0805RC SM0805UWC *ANODE MARKING GaN/SiC GaInN GaP InGaN GaP GaAsP AlGaInP GaAsP AlGaInP GaAsP GaAlAs

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

Contextual Info: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped

Contextual Info: SIEMENS CGY93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped Package

Contextual Info: Freescale Semiconductor, Inc. Product Preview MRFIC1870PP/D Rev. 0, 02/2003 MRFIC1870 3.2 V DCS/PCS GaAs Integrated Power Amplifier Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 QFN-20 Ordering Information Device Device Marking

MOTOROLA RF POWER SEMICONDUCTOR DETAIL

Abstract: JEDEC QFN case outline MRFIC1870 QFN-20
Contextual Info: Freescale Semiconductor, Inc. Product Preview MRFIC1870PP/D Rev. 0, 02/2003 MRFIC1870 3.2 V DCS/PCS GaAs Integrated Power Amplifier Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 QFN-20 Ordering Information Device Device Marking

Contextual Info: Freescale Semiconductor, Inc. Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking

GaAs FET cfy 14

Contextual Info: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration

905 motorola

Abstract: MRFIC0970 QFN-20 GSM900 MOTOROLA RF POWER SEMICONDUCTOR DETAIL freescale 352 2.6 v
Contextual Info: Freescale Semiconductor, Inc. Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking

TG2202F

Contextual Info: TOSHIBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9GHz BAND ATTENUATOR PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22dB (Typ.) • CONTROL VOLTAGE : 0V/3V PIN CONNECTION (TOP VIEW) VC2 OUT MARKING GND Type name

smd MARKING CODE G72

Contextual Info: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package

amplifier 900mhz

Abstract: amplifier siemens marking RF 98 CGY93P
Contextual Info: CGY 93P GaAs MMIC Preliminary Data l l l Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped Package CGY 93P

TG2205F

Contextual Info: TG2205F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2205F RF SPDT Switch Application: PHS Features Low insertion loss: LOSS = 0.5dB (typ.) Hight isolation: ISL = 25dB (typ.) Control voltage: 0 V/3 V Pin Assignment (top view) Marking Weight: 0.014 g (typ.)

TG2202F

Contextual Info: TOSHIBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9GHz BAND ATTENUATOR PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22dB (Typ.) • CONTROL VOLTAGE : 0V/3V PIN CONNECTION (TOP VIEW) v C2 out MARKING gnd Type name

93 ab chip

Contextual Info: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93

CFY 10

Abstract: gaas fet marking a Ga FET marking k CFY 19 cfy 14 d marking Micro-X CFY 18 GaAs FET cfy 19 GaAs Amplifier Micro-X Marking k Q62703-F106
Contextual Info: GaAs FET ● ● ● ● ● CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel Pin Configuration

cfy 19 siemens

Abstract: cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 Q62703-F106 CFY 10 Q62703-F108
Contextual Info: SIEMENS CFY 25 GaAs FET • • • • • Low noise High gain For front-end amplifiers ion-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel

Contextual Info: TOSHIBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9G H z BAND ATTENUATO R PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22dB (Typ.) • CONTROL VOLTAGE : 0 V /3 V PIN CONNECTION (TOP VIEW) VC2 OUT MARKING

CGY 8 pin

Abstract: 81541
Contextual Info: SIEMENS CGY 0918 GaAs MMIC • • • • Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package Power ramp control ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

GaAs FET cfy 19

Abstract: S11 SIEMENS z0 607 MA 7a
Contextual Info: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters 4 ^ ESD: V5005553 Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20