MARKING GC INFINEON Search Results

Marking M2

Abstract: marking M2 SOT23 INFINEON TD-9012 jrf SOT-23
Contextual Info: Infineon I êchncÈogiei GaAs MMIC CMY 91 Data Sheet • GaAs mixer with integrated IF-amplifier for mobile communication • Frequency range 0.8 GHz to 2.5 GHz • Very low current consumption 1 mA typ. • Single positive supply voltage • Operating voltage range: 2.7 to 6 V

LNA marking D d

Abstract: MARKING GC INFINEON discrete LNA D
Contextual Info: Infineon technologies GaAs MMIC CMY191 Preliminary Data Sheet • Ultralinear Mixer with integrated high IP3\ LNA and LO-Buffer for PCS-CDMA receiver applica­ tions. • Bypass switch for LNA integrated. • Mixer Input IP3 of typical 24 dBm. • LNA + Mixer mode 3 V; 15 mA;/ = 1.96 GHz; @

ci 740 s rf

Contextual Info: Infineon GaAs MMIC C M Y213 Data Sheet • • • • • Ultralinear mixer with integrated IF-ampliiier and L O-Buffer for CDMA receiver applications Typical overall performance at cellular frequen­ cies for P L0 = - 5 dBm operation conditions: 3 V, 8 m A ;/RF = 850 M Hz;/LO = 740 MHz :

PMB6250

Abstract: teflon s-parameter
Contextual Info: ICs for Communications Dual LNA PMB2362 V1.1 Preliminary Specification 05.99 T2362-XV11-P1-7600 • ABM , AOP®, ARCOFI®, ARCOFI®-BA, ARCOFI®-SP, DigiTape®, EPIC®-1, EPIC®-S, ELIC®, FALC®54, FALC®56, FALC®-E1, FALC®-LH, IDEC®, IOM®, IOM®-1, IOM®-2, IPAT®-2, ISAC®-P, ISAC®-S, ISAC®-S TE,

Contextual Info: CGY340 WLL Transmit Upconverter 1C for 3.5GHz • Fully Integrated IF Variable Gain Amplifier, Mixer, L0Buffer, three RF Amplifier Stages and a switched Attenuator • High Conversion Gain: typ. 29 dB • Gain Control Range: >75 dB • 1dB-Compression Point PidB: +17,0 dBm

marking m5S

Contextual Info: Infineon tssihncio^iat GaAs MMIC CM Y 212 Data Sheet • Ultralinear mixer with integrated IF-amplifier and LO-Bufferfor CDMA receiver applications • Typical overall performance at cellular frequen­ cies for P L0 - - 4 dBm operation conditions: 3 V, 11 mA ;/RF = 881 M Hz;/L0 = 966 MHz :

ujt 2646

Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
Contextual Info: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!

Contextual Info: In fineon fach oologia* GaAs MMIC CMY 82 Preliminary Data Sheet • GaAs receiver front-end for cellular CDMA applications • Adjustable gain control RF amplifier with 20 dB dynamic range • Low LO-power demand of typ. - 10 dBm with 2 LO buffer stages • Optional 1 or 2 LO-buffer stages

Contextual Info: CGY360 W L L R e ceive D o w n c o n v e rte r 1C fo r 3 .5G H z • Fully Integrated Two-Stage Preamplifier, Mixer, LO-Buffer, IF Amplifier and two Switched Attenuators • Very high lnput-IP3 of typical +5 dBm at max. gain and +28 dBm at min. gain • Very low LO-Power demand of typ. -5 to 0 dBm

Marking C9

Abstract: discrete LNA D LNA marking D d GPS09230 marking code C9 smd code marking c12 LNA Mixer 2.4 GHz MIXER MARKING 210
Contextual Info: GaAs MMIC CMY 191 Preliminary Data Sheet • • • • • • • • Ultralinear Mixer with integrated high IP3i LNA and LO-Buffer for PCS-CDMA receiver applications. Bypass switch for LNA integrated. Mixer Input IP3 of typical 24 dBm. LNA + Mixer mode 3 V; 15 mA; f = 1.96 GHz; @

RF LNA 10 GHz

Contextual Info: GaAs MMIC CMY 191 Preliminary Data Sheet Ultralinear Mixer with integrated high IP3I LNA and LO-Buffer for PCS-CDMA receiver applications. • Bypass switch for LNA integrated. • Mixer Input IP3 of typical 24 dBm. • LNA + Mixer mode 3 V; 15 mA; f = 1.96 GHz; @

Contextual Info: GaAs MMIC CMY212 Datasheet • • • • • Ultralinear mixer with integrated IF-amplifier and LO-Buffer for CDMA receiver applications typical overall performance

Contextual Info: GaAs MMIC CMY213 Datasheet • • • • • Ultralinear mixer with integrated IF-amplifier and LO-Buffer for CDMA receiver applications typical overall performance at cellular

Contextual Info: CMY191 GaAs MMIC Preliminary Datasheet • • • • • • • • Ultralinear Mixer with integrated high IP3i LNA and LO-Buffer for PCS CDMA receiver applications.

DFJI

Abstract: JG marking diode EZD transistor 7g
Contextual Info: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V *EL;HI<?=JG; E<C ;G?I0 - , M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * -33 " +1 `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9

Contextual Info: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V *EL;HI<?=JG; E<C ;G?I0 IH M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * /,* " +- `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9

Contextual Info: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V *EL;HI<?=JG; E<C ;G?I0 - , M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * -33 " +1 `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9

B7HF200

Abstract: receiver mmic BGT24MR2 homodyne receiver SI MMIC DOWNCONVERTER RO4350B prices quadrat Germanium power
Contextual Info: BGT24MR2 Silicon Germanium 24 GHz Twin IQ Receiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

Contextual Info: BGT24MR2 Silicon Germanium 24 GHz Twin IQ Receiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

TLE 4305

Abstract: OPTO ISOLATOR smps schematic smps transformer design TDA1683x isolator transformer loop power TRANSISTOR SMD MARKING CODE 42 transistor smps high voltage OPTOCOUPLER MARKING CODE AED02882
Contextual Info: Voltage-Current Regulator TLE 4305 Features • • • • • • • • • • • Wide supply voltage operation range Wide ambient temperature operation range Minimized external circuitry High voltage regulation accuracy High current limit regulation accuracy

B7HF200

Contextual Info: BGT24MR2 Silicon Germanium 24 GHz Twin IQ Receiver MMIC Data Sheet Revision 3.1, 2014-03-25 RF & Protection Devices Edition 2014-03-25 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

B7HF200

Contextual Info: BGT24MR2 Silicon Germanium 24 GHz Twin IQ Receiver MMIC Data Sheet Revision 3.0, 2013-07-08 RF & Protection Devices Edition 2013-07-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

BGT24MTR12

Abstract: 24 GHz transceiver microwave transceiver 3.9 B7HF200 germanium microwave antenna transceiver Germanium Amplifier Circuit diagram sun resistor 400 mohm prescaler ghz K band VCO MMIC
Contextual Info: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

T0825

Contextual Info: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.