MARKING MH NPN Search Results
MARKING MH NPN Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TTC022 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini |
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TTC020 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini |
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TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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TTC021 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
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2SC5198 |
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NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) |
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MARKING MH NPN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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BUF410A
Abstract: JESD97
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BUF410A O-247 BUF410A JESD97 | |
ignition coil bu941
Abstract: JESD97 BU941 BU941P 0015923C High voltage ignition coil driver bu941 ignition for bipolar junction diode used for
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BU941 BU941P O-247 BU94nts, JESD97. BU941, ignition coil bu941 JESD97 BU941 BU941P 0015923C High voltage ignition coil driver bu941 ignition for bipolar junction diode used for | |
BU931
Abstract: BU931P BU931T JESD97 W313 High voltage ignition coil driver NPN POWER DARLINGTON TRANSISTORS
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BU931 BU931P, BU931T O-247 O-220 JESD97. BU931 BU931P BU931T JESD97 W313 High voltage ignition coil driver NPN POWER DARLINGTON TRANSISTORS | |
Contextual Info: BUF410A High voltage fast-switching NPN power transistor Features • High voltage capability ■ Very high switching speed ■ Minimum lot-to-lot spread for reliable operation ■ Low base-drive requirements u d o Applications 3 ■ Switch mode power supplies |
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BUF410A BUF410A O-247 | |
High voltage ignition coil driver
Abstract: Part Marking TO-220 STMicroelectronics power transistor 901t transistor marking MH ST901T Marking STMicroelectronics to220 901T electronic ignition ignition coil npn power darlington
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ST901T O-220 ST901T O-220 High voltage ignition coil driver Part Marking TO-220 STMicroelectronics power transistor 901t transistor marking MH Marking STMicroelectronics to220 901T electronic ignition ignition coil npn power darlington | |
transistor marking MH
Abstract: transistor buv27 ic marking code pk transistor marking T2 buv27 Specific Device Code MH
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BUV27 O-220AB transistor marking MH transistor buv27 ic marking code pk transistor marking T2 Specific Device Code MH | |
Contextual Info: BC846BPN DUAL SURFACE MOUNT NPN/PNP TRANSISTORS COMPLIMENTARY This device contains two electrically-isolated complimentary pair (NPN and PNP)general-purpose transistors. This device is ideal for portable applications where board space is at a premium. VOLTAGE |
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BC846BPN 100mA 2002/95/EC IEC61249 OT-363, 2011-REV | |
BC846BPNContextual Info: BC846BPN DUAL SURFACE MOUNT NPN/PNP TRANSISTORS COMPLIMENTARY This device contains two electrically-isolated complimentary pair (NPN and PNP)general-purpose transistors. This device is ideal for portable applications where board space is at a premium. 65 Volts |
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BC846BPN 100mA 2002/95/EC OT-363, MIL-STD-750, 2011-REV BC846BPN | |
diode cc 3053
Abstract: 2n3772 EQUIVALENT 2N3771 1N1186A 2N3772 2n3771 equivalent 2N3772 JAN
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MIL-PRF-19500/413F MIL-PRF-19500/413E 2N3771 2N3772, MIL-PRF-19500. diode cc 3053 2n3772 EQUIVALENT 1N1186A 2N3772 2n3771 equivalent 2N3772 JAN | |
diode cc 3053
Abstract: cc 3053 2n3771 equivalent cc 3053 diode 2N3771 equivalent transistor 2n3772 EQUIVALENT 2n3771 2N3772 K 3053 TRANSISTOR MIL-PRF19500
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MIL-PRF-19500/413C MIL-S-19500/413B 2N3771 2N3772, MIL-PRF-19500. diode cc 3053 cc 3053 2n3771 equivalent cc 3053 diode 2N3771 equivalent transistor 2n3772 EQUIVALENT 2N3772 K 3053 TRANSISTOR MIL-PRF19500 | |
tfk 19
Abstract: TFK 102 TFK 19 001 TFK 105 5070d TFK 282 TFK diode tfk 3b diode s .* tfk telefunken ta 750
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T0126 15A3DIN tfk 19 TFK 102 TFK 19 001 TFK 105 5070d TFK 282 TFK diode tfk 3b diode s .* tfk telefunken ta 750 | |
1N5761
Abstract: npn BUL45G bul45a
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BUL45G BUL45/D 1N5761 npn BUL45G bul45a | |
bul45gContextual Info: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast light ballast and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE) |
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BUL45G O-220AB 21A-09 BUL45/D bul45g | |
MJE18002G
Abstract: MJE18002 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
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MJE18002G MJE18002G O-220 O-220AB 21A-09 MJE18002/D MJE18002 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 | |
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BUL147
Abstract: BUL147G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 180-WATTS
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BUL147 BUL147 O-220 O-220 BUL147/D BUL147G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 180-WATTS | |
MJE18002
Abstract: MJE18002G MJE210 MPF930 MTP12N10 MTP8P10 MUR105
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MJE18002 MJE18002 O-220 MJE18002/D MJE18002G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 | |
BUL44
Abstract: BUL44G MJE210 MPF930 MTP12N10 MTP8P10 MUR105
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BUL44 BUL44 BUL44/D BUL44G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 | |
Contextual Info: BUH50G SWITCHMODE NPN Silicon Planar Power Transistor The BUH50G has an application specific state−of−art die designed for use in 50 W HALOGEN electronic transformers and SWITCHMODE applications. Features POWER TRANSISTOR 4 AMPERES 800 VOLTS, 50 WATTS |
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BUH50G BUH50/D | |
bul147Contextual Info: BUL147 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL147 have an applications specific state−of−the−art die designed for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power supplies for all types of electronic equipment. |
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BUL147 O-220 BUL147/D | |
Contextual Info: BUL44G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL44G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features |
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BUL44G BUL44G 220AB BUL44/D | |
Contextual Info: BUH50G SWITCHMODE NPN Silicon Planar Power Transistor The BUH50G has an application specific state−of−art die designed for use in 50 W HALOGEN electronic transformers and SWITCHMODE applications. http://onsemi.com Features • Improved Efficiency Due to Low Base Drive Requirements: |
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BUH50G BUH50G BUH50/D | |
Contextual Info: MJE18002G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. |
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MJE18002G MJE18002G 220AB MJE18002/D | |
BUL44
Abstract: BUL44G MJE210 MPF930 MTP12N10 MTP8P10 MUR105
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BUL44G BUL44G O-220AB 21A-09 BUL44/D BUL44 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 | |
Contextual Info: BUL147 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL147 have an applications specific state−of−the−art die designed for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power supplies for all types of electronic equipment. |
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BUL147 BUL147 BUL147/D |