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    MARKING NF5 Search Results

    MARKING NF5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC
    		Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C
    		Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    54ACT157/VFA-R
    		Rochester Electronics LLC 54ACT157/VFA-R - Dual marked (5962R8968801VFA) Visit Rochester Electronics LLC Buy
    54LS37/BCA
    		Rochester Electronics LLC 54LS37/BCA - Dual marked (M38510/30202BCA) Visit Rochester Electronics LLC Buy
    MG8097/B
    		Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy

    MARKING NF5 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MGA-85563-BLK

    Abstract: MGA-85563 rfics marking 76 A004R MGA-85563-TR1 NF50 marking CODE GA sot363
    Contextual Info: 3-volt, Low Noise Amplifier for 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • Lead-free Option Available Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB


    Original     		MGA-85563 OT-363 SC-70) MGA-85563 5968-6303E 5989-1799EN MGA-85563-BLK rfics marking 76 A004R MGA-85563-TR1 NF50 marking CODE GA sot363 PDF

    5967-5769E

    Abstract: class D power amplifier 6.78 MHz a006 INA-32063 INA-32063-BLK NF50 marking 320 SOT-363
    Contextual Info: 3.0 GHz Wideband Silicon RFIC Amplifier Technical Data INA-32063 Features • 17 dB Gain at 1.9 GHz Surface Mount SOT-363 SC-70 Package • +3 dBm P1 dB at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications Pin Connections and Package Marking


    Original     		INA-32063 OT-363 SC-70) INA-32063 5965-8921E 5967-5769E 5967-5769E class D power amplifier 6.78 MHz a006 INA-32063-BLK NF50 marking 320 SOT-363 PDF

    ina 333 amplifier

    Abstract: a006 INA-32063 INA-32063-BLK NF50 AN-A006
    Contextual Info: 3.0 GHz Wideband Silicon RFIC Amplifier Technical Data INA-32063 Features • 17 dB Gain at 1.9 GHz Surface Mount SOT-363 SC-70 Package • +3 dBm P1 dB at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications Pin Connections and Package Marking


    Original     		INA-32063 OT-363 SC-70) INA-32063 5967-5769E ina 333 amplifier a006 INA-32063-BLK NF50 AN-A006 PDF

    Contextual Info: 3-volt, Low Noise Amplifier for 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • 1.6 dB minimum Noise Figure at 1.9 GHz Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB


    Original     		MGA-85563 OT-363 SC-70) MGA-85563 OT-363 OT-143 sin017) MGA-85563-TR1 PDF

    marking code ga sot 363

    Abstract: rfics marking 5 rfics marking 76 MGA-85563 MGA-85563-BLK MGA-85563-TR1 NF50 marking 34 sot-363 rf sot143 TOP marking mga 017
    Contextual Info: 3-volt, Low Noise Amplifier for 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • 1.6 dB minimum Noise Figure at 1.9 GHz Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB


    Original     		MGA-85563 OT-363 SC-70) MGA-85563 5966-4894E 5968-6303E marking code ga sot 363 rfics marking 5 rfics marking 76 MGA-85563-BLK MGA-85563-TR1 NF50 marking 34 sot-363 rf sot143 TOP marking mga 017 PDF

    Low Noise Gaas

    Contextual Info: 3-volt, Low Noise Amplifier for 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • 1.6 dB minimum Noise Figure at 1.9 GHz Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB


    Original     		MGA-85563 OT-363 SC-70) MGA-85563 OT-363 OT-143 5966-4894E 5968-6303E Low Noise Gaas PDF

    Contextual Info: 3-volt, Low Noise Amplifier for␣ 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • 1.6 dB minimum Noise Figure at 1.9 GHz Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB


    Original     		MGA-85563 OT-363 SC-70) MGA-85563 MGA-85563-TR1 MGA-85563-BLK 5966-3109E 5966-4894E PDF

    Contextual Info: BGB717L7ESD Low Noise Amplifier MMIC for FM Radio Applications Data Sheet Revision 3.4, 2012-11-07 RF & Protection Devices Edition 2012-11-07 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		BGB717L7ESD BGB717L7ESD: PDF

    Contextual Info: BGB719N7ESD Low Noise Amplifier MMIC for FM Radio Applications Data Sheet Revision 1.1, 2012-10-30 RF & Protection Devices Edition 2012-10-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		BGB719N7ESD BGB719N7ESD: PDF

    BFR840L3RHESD

    Abstract: Germanium Transistor LNA ku-band
    Contextual Info: BFR840L3RHESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-09 RF & Protection Devices Edition 2013-04-09 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		BFR840L3RHESD BFR840L3RHESD: BFR840L3RHESD Germanium Transistor LNA ku-band PDF

    Contextual Info: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		BFR840L3RHESD BFR840L3RHESD: PDF

    rf transistor frequency 10.0GHz gain 20 dB

    Abstract: 10.0GHZ TRANSISTOR AMPLIFIER ku-band lnb SiGe Microsystems LNA ku-band
    Contextual Info: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		BFR840L3RHESD BFR840L3RHESD: rf transistor frequency 10.0GHz gain 20 dB 10.0GHZ TRANSISTOR AMPLIFIER ku-band lnb SiGe Microsystems LNA ku-band PDF

    Contextual Info: BFR843EL3 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Target Data Sheet Revision 1.0, 2013-06-19 RF & Protection Devices Edition 2013-06-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		BFR843EL3 BFR843EL3: PDF

    Germanium Transistor

    Abstract: 2.4GHz Power Amplifier transistor
    Contextual Info: BFR720L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-09-03 RF & Protection Devices Edition 2012-09-03 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BFR720L3RH Germanium Transistor 2.4GHz Power Amplifier transistor PDF

    Contextual Info: BFR843EL3 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2014-08-05 RF & Protection Devices Edition 2014-08-05 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved.


    Original     		BFR843EL3 TSLP-3-10-PO TSLP-3-10-FP BFR843EL3: TSLP-3-10-TP PDF

    Contextual Info: BFR720L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-09-03 RF & Protection Devices Edition 2012-09-03 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BFR720L3RH PDF

    Contextual Info: BFR843EL3 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2014-06-04 RF & Protection Devices Edition 2014-06-04 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved.


    Original     		BFR843EL3 TSLP-3-10-PO TSLP-3-10-FP BFR843EL3: TSLP-3-10-TP PDF

    Contextual Info: BFR740L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-06-21 RF & Protection Devices Edition 2012-06-21 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BFR740L3RH PDF

    Contextual Info: BFR843EL3 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2014-07-04 RF & Protection Devices Edition 2014-07-04 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved.


    Original     		BFR843EL3 TSLP-3-10-PO TSLP-3-10-FP BFR843EL3: TSLP-3-10-TP PDF

    Contextual Info: BFR740L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-06-21 RF & Protection Devices Edition 2012-06-21 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BFR740L3RH PDF

    LNA ku-band

    Contextual Info: BFR840L3RHESD Robust ultra low noise SiGe:C Bipolar RF Transistor in very small thin package Data Sheet Revision 1.0, 2012-04-19 RF & Protection Devices Edition 2012-04-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG


    Original     		BFR840L3RHESD BFR840L3RHESD: LNA ku-band PDF

    Contextual Info: BFR720L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-09-03 RF & Protection Devices Edition 2012-09-03 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BFR720L3RH PDF

    BGA628L7

    Contextual Info: BGA628L7 Silicon Germanium Wide Band Low Noise Amplifier Data Sheet Revision 1.1, 2009-12-17 Preliminary RF & Protection Devices Edition 2009-12-17 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.


    Original     		BGA628L7 BGA628L7 PDF

    BGA628L7

    Abstract: XPOSYS 628L C166 JESD22-A114 NF50
    Contextual Info: BGA628L7 Silicon Germanium Wide Band Low Noise Amplifier Data Sheet Revision 1.1, 2009-12-17 Preliminary RF & Protection Devices Edition 2009-12-17 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.


    Original     		BGA628L7 BGA628L7 XPOSYS 628L C166 JESD22-A114 NF50 PDF