MARKING PA TRANSISTOR Search Results

CHTA92LGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHTA92LGP SURFACE MOUNT High Voltage PNP Transistor VOLTAGE 300 Volts CURRENT 500 mAmpere APPLICATION * Small Signal Amplifier . FEATURE MARKING * PA 2 .103 (2.64) .086 (2.20) .045 (1.15) .033 (0.85) C (3) .028 (0.70) .020 (0.50)

"marking PA"

Abstract: PNP Epitaxial Silicon Transistor sot-23 125OC
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHTA92LPT SURFACE MOUNT High Voltage PNP Transistor VOLTAGE 300 Volts CURRENT 500 mAmpere APPLICATION * Small Signal Amplifier . FEATURE MARKING * PA 2 .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85) C (3)

Contextual Info: DP500 Semiconductor PNP Silicon Transistor Description • Suit able for low volt age large current drivers • Excellent h FE Linearity • Com plem ent ary pair wit h DN500 • Switching Application Ordering Information Type N O. Marking Pa ck a ge Code

Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTORS P-KJ-P transistors Marking BCW89 = H3 PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm O .U Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)

1M BC848

Abstract: BC848C BC846 BC846A BC846B BC847 BC847A BC847B BC847C BC848
Contextual Info: BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N -P -N transistors Marking BC846 = ID BC846A = 1A BC846B = IB BC847 = 1H BC847A = IE BC847B = IF BC847C = 1G BC848 = 1M BC848A = 1J BC848B = IK BC848C = 1L PA C K A G E O U TLIN E DETA ILS

BSR19A

Abstract: BSR19
Contextual Info: BSR19 BSR19A SILICON N -P-N HIGH-VOLTAGE TRANSISTORS N -P-N high-voltage small-signal transistors Marking BSR19 = U35 BSR19A = U36 PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm J5-02.8 0.14 0.09 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER

Contextual Info: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N-P transistor Marking CMBT5401 = 2L PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm _3 .0_ 2.8 0.14 0.48 0.38 3 Pin configuration BASE EMITTER COLLECTOR 2.6 2.4 _1.02 o.sr 0.60 0.40 _2 .00_ ABSOLUTE MAXIMUM RATINGS

W15NA

Contextual Info: E3fl33T4 DÜ OÜTBT W BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PA CKA G E O U TLINE DETAILS A LL D IM ENSIO NS IN m m _3.0_ 2.8 0.14

A1362

Abstract: CSA1362 CSA1362GR transistor marking CS
Contextual Info: 23033^4 DDGOflbT CSA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P -N -P transistor PA CKA G E O UTLIN E DETAILS ALL D IM EN SIO N S IN m m Marking CSA1362GR = AE _3.0_ 2.8 0.14 0.09 0.48 0.38 0.70 0.50 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

BCV72

Abstract: BCV71
Contextual Info: BCV71 BCV72 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BCV71 = K 7 BCV72 = K8 PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm _3.0_ 2.8 0 .14 0.48 0.38 3 Pin configuration 2.6 1 = BASE 2.4 2 = EMITTER 3 = COLLECTOR J ’ I _1.02_J

Contextual Info: CDU CMBTA92 CMBTA93 SILICON EPITAXIAL TRANSISTORS P-N-P transistor Marking CMBTA92 = 2D CMBTA93 = 2E PA CKA G E O U TLINE D ETAILS A LL D IM ENSIO NS IN m m 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 _ 0.89

TRANSISTOR BL 100

Abstract: CSC2712 CSC2712BL CSC2712GR CSC2712Y
Contextual Info: CDU CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PA CKA G E OU TLIN E DETAILS A LL DIM ENSIO NS IN m m Marking CSC2712Y=1E CSC2712GR G =1 F CSC2712BL(L)=1 G _3.0_ 2.8 0.14 0.48 0.33 Pin configuration 3 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6

Contextual Info: CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N -P-N transistors Marking CMBT3903 = ÎY CMBT3904 = ÎA PA CKA G E O U TLIN E DETAILS A LL D IM EN SIO N S IN m m _3.0_ 2.8 014 0.09 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.02 ^

Contextual Info: CMBT3906 SILICON EPITAXIAL TRANSISTOR P-N -P transistor Marking CMBT3906 = 2A PA CKA G E O U TLIN E DETAILS A LL D IM EN SIO N S IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 0.89" 2.00 0.60 0.40 1.80

Contextual Info: CDU CMBT4123 GENERAL PURPOSE TRANSISTOR N -P-N transistor Marking CMBT4123 = 5B PA CKA GE O U TLINE D ETAILS A LL D IM ENSIO NS IN m m J3.0 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 _1 ,° 2_ 0.89 0.60 0.40 ABSOLUTE MAXIMUM RATINGS

Contextual Info: CSC2712 CDÎL SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PA CKA G E O U TLIN E D ETA ILS ALL D IM EN SIO N S IN m m CSC2712Y=1E CSC2712GR G =1 F CSC2712BL(L)=1G _3.0_ 2.8 0.14 6.09 0.48 0.38 Pin configuration 0.70 0.50 3 1 = BASE 2 = EMITTER

Contextual Info: 2 3 Û 3 3 C14 0Q00Ö4Ö 362 • CMBT6517 HIGH-VOLTAGE TRANSISTOR N -F -N transistor Marking CMBT6517 = 1Z PA CKA GE O U TLINE DETAILS A LL DIM ENSIO NS IN m m 3.0 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ■C> 2 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

CSA1362GR

Abstract: transistor K 1413 CSA1362
Contextual Info: CSA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P-N -P transistor PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m Marking CSA1362GR : AE _3 .0_ 2.8 0.14 0.48 0.38 Pin configuration 1 = BASE 2 = EMITTER • 3 = COLLECTOR 2.6 2.4 _K°2_ 0.89 0.60

BCW71

Abstract: BCW72
Contextual Info: CDU BCW71 BCW72 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking PA C K A G E O U TLIN E D ETA ILS A LL D IM E N SIO N S IN m m BCW71 = Kl BCW72 = K2 _3.0 2.8 0.48 0.14 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 0.60

CMBTA42

Abstract: CMBTA43
Contextual Info: GDIIL CMBTA42 CMBTA43 SILICON EPITAXIAL TRANSISTORS N -P-N transistors Marking CMBTA42 = ID CMBTA43 = IE PA C K A G E O U TLIN E D ETA ILS A L L D IM EN SIO N S IN m m _3.0_ 2.8 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR

CMBTA92

Abstract: CMBTA93
Contextual Info: CMBTA92 CMBTA93 SILICON EPITAXIAL TRANSISTORS P -N -P transistor Marking CMBTA92 = 2D CMBTA93 = 2E PA C K A G E O U TLIN E D ETA ILS A LL D IM E N SIO N S IN m m O.U -JpTöS 0.70 0.50 t Pin configuration 1.4 1.2 1 = BASE 2 = EMITTER 3 = COLLECTOR [/< R0.05

BC817

Abstract: bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
Contextual Info: 23Ö33TM □□□□73 4 T07 • BC817 BC818 DÎL SILICON PLANAR EPITAXIAL TRANSISTORS N-P—N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN m m

BCX17

Abstract: BCX18
Contextual Info: BCX17 BCX18 SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors Marking BCX17 = T1 BCX18 = T2 PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m 3.0_ 2.8 0.14 0.48 0.38 0.70 0.50 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1 2.6 2.4

Contextual Info: CDIL BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PA CKA G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m 3.0 2.8 0.14 0.48 I 0.38 t1 3 I 2.4 1I Pin configuration