MARKING QD Search Results

DD05215

Abstract: ADD1210
Contextual Info: A t* t '$ / PRELIM INARY DATA SHEET HAL115 Hall Effect Sensor IC à 4bfl2711 Ü005213 410 Edition June 30, 1995 6 2 5 1 -41 4-2 P D ITT Semiconductors ctors ITT HAL115 PRELIMINARY DATASHEET Hall Effect Sensor 1C in CMOS technology Marking Code Type Marking

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

Contextual Info: 3SE D • flS3b32Q QDlbflOl 2 « S I P Silicon N Channel MOSFET-Tetrode BF994S _ SIEMENS/ SPCL-i SEMICONDS _ • For VHF applications, especially for input and mixer stages with wide tuning range, e.g. In CATV tuners Type Marking Ordering code

NT6SM32M16AG-S1

Abstract: NT6SM16M32 128M32 NT6SM16M32AK NT6SM32M16AG Lpddr2 Idd1 8M32R NT6SM16M32AK-S1 lpddr2 layout lpddr2 256mb
Contextual Info: 512Mb LPSDR SDRAM NT6SM32M16AG / NT6SM16M32AK / NT6SM16M32RAK Feature  Options Fully synchronous; all signals registered on positive edge of  Marking VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed

Lpddr2 Idd7

Abstract: COMMAND42 lpddr2 256mb lpddr2 layout NT6SM32M16AG-S2 LPDDR2 1Gb Memory NT6SM16M32
Contextual Info: 512Mb LPSDR SDRAM NT6SM32M16AG / NT6SM16M32AK / NT6SM16M32RAK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed

Magnetic Field Sensor FLC 100

Abstract: transistor ITT
Contextual Info: HAL628, HAL638 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Common Features: -• - switching offset compensation - operates from 4.5 V to 24 V supply voltage - overvoltage and reverse-voltage protection

NCP1937

Contextual Info: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters Common General Features http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB 1 20 NCP1937xxG AWLYWW

HAL628

Abstract: 004-G intermetall 638UA
Contextual Info: HAL628, HAL638 Hall Effect Sensor 1C in CMOS technology ADVANCE INFORMATION Marking Code Temperature Range Type Common Features: - switching offset compensation - operates from 4.5 V to 24 V supply voltage HAL 628UA, HAL628S - overvoltage and reverse-voltage protection

Lpddr2 Idd7

Abstract: 216-ball LPDDR2 NT6SM16M32 NT6SM16M32AK-S1
Contextual Info: 512Mb LPSDR SDRAM NT6SM16M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle

Lpddr2 Idd7

Abstract: Jedec lpddr2 216-ball LPDDR 8Gb lpddr2-s2
Contextual Info: 256Mb LPSDR SDRAM NT6SM8M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle

NTC 200-9

Abstract: a2240 128M16 A1930 NT6SM16M32
Contextual Info: 512Mb LPSDR SDRAM NT6SM16M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle

NCP1937

Contextual Info: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB XXXXX A WL YY WW G 1 20 XXXXXXXXXXXXG XXXXXXXXXXXXX

lpddr2 256mb

Abstract: NT6DM8M32AC-T1 NT6DM16M16AD NT6DM8M32AC lpddr2 layout NT6DM8M32 Dual LPDDR2 lpddr2 256mb kgd lpddr2-s2
Contextual Info: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking  VDD /VDDQ

JEDEC51-1

Abstract: NCP1937 NCP1937C1DR2G
Contextual Info: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB XXXXX A WL YY WW G 1 20 XXXXXXXXXXXXG XXXXXXXXXXXXX

NCP1937

Abstract: NTC thermistor circuit diagram TTC03 PFC inductor TTC-03
Contextual Info: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB XXXXX A WL YY WW G 1 20 XXXXXXXXXXXXG XXXXXXXXXXXXX

NT6DM16M16AD-T1

Abstract: 64M32 HP 3458 NT6DM16M16AD-T1I
Contextual Info: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking  VDD /VDDQ

Contextual Info: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability

Si1901DL

Abstract: D234
Contextual Info: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability

Si1901DL

Abstract: vishay siliconix code marking
Contextual Info: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability

Contextual Info: MODEL ST-30 Chip Potentiometers Surface Mount, .118" [3.0m m ] Square Single Turn, Open Fram e FEATURES • Designed for efficient, accurate miniaturization • Can be wave or dip soldered without rotor problems • Coded marking for easy identification of resistance value

HCT595AG

Abstract: MC74HCT595ADG MC74HCT595A
Contextual Info: MC74HCT595A 8-Bit Serial-Input/Serial or Parallel-Output Shift Register with Latched 3-State Outputs and LSTTL Compatible Inputs http://onsemi.com MARKING DIAGRAMS High−Performance Silicon−Gate CMOS The MC74HCT595A consists of an 8−bit shift register and an 8−bit

Contextual Info: ADVANCE INFORMATION HAL 800 Programmable Linear Hall Effect Sensor r MICRO NAS Edition Aug. 24, 1998 6251-441-1 Al INTERMETALL HAL 800 ADVANCE INFORMATION Contents Page Section Title 3 3 1. 1.1. Introduction Major Applications 3 1.2. Features 4 1.3. Marking Code

diode code ae 89A

Abstract: diode AE 89A 377 hall sensor ITT INTERMETALL ITT semiconductors ITT 30 15 an 220 diode ITT specification
Contextual Info: Edition May 7,1997 6251-345-4PD ITT INTER METALL 4^82711 GOObSflG TIE HAL300 PRELIMINARY DATA SHEET Marking Code Differential Hall Effect Sensor 1C in CMOS technology Type Tem serature Riinge Release Notes: Revision bars indicate significant changes to the previous edition.

Contextual Info: MC74HCT595A 8-Bit Serial-Input/Serial or Parallel-Output Shift Register with Latched 3-State Outputs and LSTTL Compatible Inputs http://onsemi.com MARKING DIAGRAMS High−Performance Silicon−Gate CMOS The MC74HCT595A consists of an 8−bit shift register and an 8−bit