MARKING S3 AMPLIFIER Search Results

G2997BP71U

Contextual Info: G2997B Global Mixed-mode Technology DDR Termination Regulator Features General Description ̈ The G2997B is a 2A sink/source tracking termination regulator. It is specifically designed for low-cost/ low-external component count systems. The G2997B maintains a high speed operational amplifier that provides fast load transient response and only requires

WDFN-10L

Abstract: RT9026PFP RT9026 RT9026FP RT9026SP RT9026PQW S5 MARKING s3 86c DFN 3x3 PACKAGE MSOP-10
Contextual Info: RT9026 DDR Termination Regulator General Description Features RT9026 is a 3A sink/source tracking termination regulator. It is specifically designed for low-cost and low-external component count systems. The RT9026 possesses a high speed operating amplifier that provides fast load transient

RT9026

Abstract: DS9026-03 s3 86c RT9026PFP MSOP-10 SSTL-18 86C marking RT9026FP DFN 3x3 PACKAGE
Contextual Info: RT9026 DDR Termination Regulator General Description Features RT9026 is a 3A sink/source tracking termination regulator. It is specifically designed for low-cost and low-external component count systems. The RT9026 possesses a high speed operating amplifier that provides fast load transient

45128 ifm

Abstract: ifm 45128 Essen PTB 2035 X ifm 45128 45128 45128 essen atex 2035 ifm D 45128 marking S3 amplifier IFM Electronic GmBH n0032A
Contextual Info: Evaluation systems N0032A NV1221/115VAC/RL/1D/1G Switching amplifier for Namur sensors according to 94/9/EG ATEX ATEX approval Group II, category (1) G D 2-channel Relay outputs Programmable output function Short-circuit and wire monitoring 1: LED 2: selector switch

HN3B01F

Contextual Info: TOSHIBA TOSHIBA TRANSISTOR HN3B01F SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) H N3B01F U nit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. +0.2 2 .8 -0 .3 +0.2 Ql: • High Voltage and High C urrent : V ç;e O - 50V, 1(2 —150mA (Max.)

RT9026SP

Abstract: RT9026PFP RT9026FP RT9026PQW RT9026PSP RT9026GQW RT9026GFP s3 86c RT9026GSP RICHTEK
Contextual Info: RT9026 DDR Termination Regulator General Description Features RT9026 is a 3A sink/source tracking termination regulator. It is specifically designed for low-cost and low-external component count systems. The RT9026 possesses a high speed operating amplifier that provides fast load transient

Contextual Info: TO SH IBA MT3S07T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07T Unit in mm VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.2 ±0.05 0.8 ± 0.05 Low Noise Figure : NF = 1.5 dB V C E = 3V, IC = 5mA, f = 2 GHz High Gain : |S2le|2 = 9-5 dB

Contextual Info: Photoelectrics Amplifier Type S142C. • • • • • • • µ-Processor controlled Amplifier relay for photoelectric switches Automatic or manual emitter power regulation Multiplex system, master/slave 20 ms cycle Self-diagnostic functions Alignment help

s142

Abstract: marking S1 amplifier ZPD11 XNONE marking S3 amplifier UL325 02A250
Contextual Info: Photoelectrics Amplifier Type S142C. • • • • • • • µ-Processor controlled Amplifier relay for photoelectric switches Automatic or manual emitter power regulation Multiplex system, master/slave 20 ms cycle Self-diagnostic functions Alignment help

TRANSISTOR MARKING TE US6

Abstract: 125H HN1B01FU
Contextual Info: T O S H IB A TOSHIBA TRANSISTOR HN1B01FU SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) H N 1 B 01 FU Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2 . 1± 0.1 Q1 : • High Voltage and High Current : VCEO = —50V, I q = —150mA (Max.)

RF AMPLIFIER marking S3

Contextual Info: SNA-386 Product Description DC-3 GHz, Cascadable GaAs MMIC Amplifier Sirenza Microdevices’ SNA-386 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surfacemountable plastic package. At 1950 MHz. this amplifier provides 20dB of gain when biased at 35mA.

SIRENZA MARKING

Abstract: mmic marking S3
Contextual Info: SNA-386 Product Description DC-3 GHz, Cascadable GaAs MMIC Amplifier Sirenza Microdevices’ SNA-386 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surfacemountable plastic package. At 1950 MHz. this amplifier provides 20dB of gain when biased at 35mA.

mmic s3

Abstract: RF AMPLIFIER marking S3 marking S3 amplifier SNA-300 SNA-386 SNA-386-TR1 SNA-386-TR2 SNA-386-TR3 386 amplifier Sirenza Microdevices, Inc
Contextual Info: SNA-386 Product Description DC-3 GHz, Cascadable GaAs MMIC Amplifier Sirenza Microdevices’ SNA-386 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surfacemountable plastic package. At 1950 MHz. this amplifier provides 20dB of gain when biased at 35mA.

Contextual Info: 2SK1771 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL MOS TYPE K K 1 7 7 1 « r am. • m m m FM TUNER, VHF RF AMPLIFIER APPLICATIONS. Unit in mm + 0.2 2.9 - 0.3 • Superior Inter Modulation Performance. • Low Noise Figure. : NF = 1.0dB Typ.

MMBA813S4

Contextual Info: MOTOROLA SC iDIOD ES/ OPTO} 6367255 MOTOROLA 34 SC Ï F | b 3 b ? a S S □03fl57ti D 34C DIODES/OPTO 38276 T~z,n~tf SOT23 (continued) MMBA813S2,3,4 d e v ic e no . SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C | • Designed for audio amplifier and driver applications.

MMBA813S3

Abstract: motorola opto MMBA813S2 MMBA813S4
Contextual Info: 34 MOTOROLA SC i D I O D E S / O P T O 6367255 MOTOROLA SC Î F |t . 3 b ? a S S 003fl27t. 0 34C DIO DES/O PTO 38276 T - Z 'T - t f SOT23 (continued) MMBA813S2,3,4 d e v ic e no . SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C | • Designed for audio amplifier and driver applications.

capacitor marking c106

Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

SMD r801

Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,

102433

Abstract: SNA-300 SNA-376 SNA-376-TR1 SNA-376-TR2 Sirenza Microdevices, Inc
Contextual Info: SNA-376 Product Description Sirenza Microdevices’ SNA-376 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline package. This amplifier provides 22dB of gain when biased at 35mA. External DC decoupling capacitors determine low frequency

102433

Abstract: SNA-376
Contextual Info: SNA-376 Product Description Sirenza Microdevices’ SNA-376 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline package. This amplifier provides 22dB of gain when biased at 35mA and 4V. External DC decoupling capacitors determine low frequency

FMMT918

Abstract: marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23
Contextual Info: FERRANTI * semiconductors FMMT918 NPN Silicon Planar V H F /U H F Transistor DESCRIPTION This device is intended for low noise, high frequency amplifier and oscillator applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid

c102 TRANSISTOR

Abstract: tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR PTFA220041M TL108 tl111
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency

c102 TRANSISTOR

Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

TRANSISTOR C802

Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS