MARKING SA TRANSISTOR Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate

Philips MARKING CODE

Abstract: sot23 02p 2N7002 MARKING 702 sot23 marking code m8p BSS84 MARKING CODE BSN20 MARKING marking pKX sot23 marking M8p 2N7002 PHILIPS SOT323 702 sot23
Contextual Info: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 BSN20W M8p M8t BSS84 SP BSS87 BSS123 BSS192 KA SA BST80 BST82 KM 02p

2N7002 MARKING 702

Abstract: 2n7002 MARKING 2N7002 PHILIPS MARKING BSS84 MARKING CODE marking 702 sot23 Philips MARKING CODE BSN20 MARKING sot23 02p PMBF170 pkx codes marking 2N7002
Contextual Info: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 M8p BSN20W M8t BSS84 SP BSS87 KA BSS123 SA BSS192 KB BST80 KM BST82

BC848F

Abstract: BC858F
Contextual Info: 7 BC848F Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858F Ordering Information Type NO. Marking BC848F Package Code SA SOT-23F

BC848F

Abstract: BC858F
Contextual Info: BC848F 7 Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858F Ordering Information Type NO. Marking BC848F Package Code SOT-23F SA

BC848

Abstract: Transistor SA sot-23 BC858
Contextual Info: BC848 Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858 Ordering Information Type NO. Marking BC848 Package Code SA SOT-23 : hFE rank

Contextual Info: sa%yd Transistors Taping Packages below are available for automatic mounting. dk Example of marking : 2SC4641T-AA Contact sales offices for zigzag bended type of large box size. SANYO Electric Co. .Ltd. Semiconductor Business Headauarters. TR Division. 102

Contextual Info: 2SA1734T1 Preferred Device PNP Silicon Transistor The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. • High Current: 1.2 Amp • Available in 7 inch/1000 unit Tape and Reel • Device Marking: SA http://onsemi.com

marking SA

Contextual Info: 2SA1734T2G Preferred Device PNP Silicon Transistor The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. • High Current: 1.2 Amp • Available in 7 inch/1000 unit Tape and Reel • Device Marking: SA http://onsemi.com

2SA1734R1G

Abstract: marking SA
Contextual Info: 2SA1734R1G Preferred Device PNP Silicon Transistor The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. • High Current: 1.2 Amp • Available in 7 inch/1000 unit Tape and Reel • Device Marking: SA http://onsemi.com

sanyo tv tuner

Abstract: 2sa1778 JT MARKING 2SA1669 2SC3770 2SC4401 2SC4402 2SC4403 2SC4405 2SC4406
Contextual Info: SA/Im VERY HIGH-FREQUENCY TRANSISTOR SERIES Ifcl Use * * * * Wide-band amplifiers UHF.VHF TV tuners CATV converters RF modulators ( )=Marking on MCP. CP, PCP. For PNP, (-)sign is omitted. P C : ( P a c k a g e :PCP) Mounted on PCB ( 2 50mm!X0. 8mm) Features *

bss123 marking sa

Contextual Info: Supertex Inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / R d S o n Order Number / Package ' d (ON) Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* SA* 100V 6.0Q 0.5A BSS123 where * = 2-week alpha date code

3V02

Contextual Info: – E ET L O BS BSS123 O –N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code

Contextual Info: Supertex inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ b v dgs R dS ON (m ax) Id(ON) (m in ) 100V 6.0Q. 0.5A O rder N um ber / Package Product marking for TO-236AB: TO-236AB* SA* BSS123 where = 2-week alpha date code

CSD1306

Contextual Info: CDU CSD1306 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PA C K A G E O U TLIN E D E T A IL SA L L D IM EN SIO N S IN m m CSD1306E-6E _3.0_ 2.8 0.48 0.14 0.09 "031 Pin configuration JL 0.70 0.50 3 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 1.4

SOT-23 marking 717

Abstract: SAP SOT23 sot-23 MARKING CODE 718
Contextual Info: BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

SAP SOT23

Abstract: marking SA sot-23 BSS123 BSS123 5A marking 8A sot-23 p-channel SOT-23 20V SOT-23 marking 2a to-236 TO-236AB sot-23 MARKING CODE GS 5
Contextual Info: BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6Ω 0.5A BSS123 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

ZVN4206E

Abstract: bss123 marking sa B55123 2N7002 BS170F BSS123 BSS138 VN10LF ZVN3306F ZVN3310F
Contextual Info: SELECTION TABLES B V dss Id V mA at Id Max. mA Min. Pd ^D S on V GS(thl / > Part number 1 TABLE 4: SOT-23 MOSFETS 'SOTFETS' S2 Max. Id mA V qs V Package marking w N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 BSS123 100 170 0.68 0.8 2.8 1 6 100 10 360 SA

2L TRANSISTOR

Abstract: marking code 576 R1Q4A3618BBG-33R R1Q4A3618BBG-40R R1Q4A3636B R1Q4A3636BBG-33R R1Q4A3636BBG-40R R1Q4A3636BBG-50R R1Q4A3636BBG-60R R1Q4A3618BBG-60R
Contextual Info: R1Q4A3636B/R1Q4A3618B 36-Mbit DDRII SRAM 2-word Burst REJ03C0343-0003 Preliminary Rev. 0.03 Apr.11, 2008 Description The R1Q4A3636B is a 1,048,576-word by 36-bit, the R1Q4A3618B is a 2,097,152-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It

fbga 15x17

Abstract: fbga 15x17 tray KA Finance activities R1Q5A3618B R1Q5A3618BBG-33R R1Q5A3618BBG-40R R1Q5A3636B R1Q5A3636BBG-33R R1Q5A3636BBG-40R R1Q5A3636BBG-50R
Contextual Info: R1Q5A3636B/R1Q5A3618B 36-Mbit DDRII SRAM 4-word Burst REJ03C0344-0003 Preliminary Rev. 0.03 Apr.11, 2008 Description The R1Q5A3636B is a 1,048,576-word by 36-bit, the R1Q5A3618B is a 2,097,152-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It

RE-140

Abstract: C124* transistor
Contextual Info: DTA124GKA / DTA124GSA DTC124GUA / DTC124GKA / DTC124GSA Transistors I Digital transistors built-in resistors DTA124GKA / DTA124GSA •Features • A b so lu te maximum ratings (Ta=»25’C ) 1 ) The built-in bias resistors consist of thin-fflm resistors with

MARKING SA transistor

Abstract: DTC144GS
Contextual Info: DTA144GUA / DTA144GKA DTC144GE / DTC144GUA / DTC144GKA / DTC144GSA Transistors I Digital transistors built-in resistors D TA 144G U A / D TA 144G K A • A b so lu te maximum ratings (Ta— 25*C ) • F e a tu re s 1 ) The built-in bias resistors consist of thin-film resistors with

Contextual Info: Datasheet R1Q4A4436RBG, R1Q4A4418RBG 144-Mbit DDR II SRAM 2-word Burst R10DS0146EJ0101 Rev.1.01 Nov 18, 2013 Description The R1Q4A4436RBG is a 4,194,304-word by 36-bit and the R1Q4A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

Contextual Info: Datasheet R1Q2A4436RBG, R1Q2A4418RBG 144-Mbit QDR II SRAM 2-word Burst R10DS0140EJ0100 Rev.1.00 Sep 02, 2013 Description The R1Q2A4436RBG is a 4,194,304-word by 36-bit and the R1Q2A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor