MARKING SMD TRANSISTOR DQ Search Results

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

MARKING SMD TRANSISTOR DQ

Abstract: transistor smd marking ds MARKING SMD TRANSISTOR DR smd transistor ds 65 smd transistor ds SOT 23 2PB710AR smd transistor dr SMD transistor MARKING 65 MARKING SMD PNP TRANSISTOR 2PB710A
Contextual Info: Transistors IC SMD Type PNP General Purpose Transistor 2PB710A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 50 V . +0.1 1.3-0.1 +0.1 2.4-0.1 High current (max. 500 mA) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1

Siemens MTT 95 A 12 N

Abstract: Siemens MTT 95 A 16 N SDA3412X SDA3412 SMD TRANSISTOR N13 Siemens MTT 95 A 08 N N7 2C SMD Transistor transistor smd marking JR P5 smd transistor Siemens MTT 40 A 12 N
Contextual Info: bSE D • fiS3SbOS DQS3SM3 b2b M S I E G SIEM EN S _ SIEMENS AKTIENGESELLSCHAF ■ ' GHz PLL with I 2C Bus and In-Lock Detector SDA 3412X Bipolar 1C Preliminary Data Features • 1-chip system for MPU control I 2C bus • 1 fixed, 3 programmable chip addresses

1MA160

Abstract: 2SD2211 80MHZ 2SD2211 hfe
Contextual Info: Transistors SMD Type Power Transistor 2SD2211 Features High breakdown voltage. BVCEO = 160V Low collector output capacitance. (Typ. 20pF at VCB = 10V) High transition frequency.(fT = 80MHZ) Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage

MARKING SMD TRANSISTOR DQ

Abstract: MARKING SMD TRANSISTOR DR SMD PNP TRANSISTOR MARKING SMD PNP TRANSISTOR 2PB1219A 2PB1219AQ 2PB1219AR 2PB1219AS smd transistor ds 65 smd transistor dr
Contextual Info: Transistors IC SMD Type PNP General Purpose Transistor 2PB1219A Features High current max. 500 mA Low voltage (max. 50 V) Low collector-emitter saturation voltage (max. 600 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating

Motorola transistor smd marking codes

Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
Contextual Info: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases

TRANSISTOR SMD MARKING CODE 1K

Abstract: DIODE smd marking code UM 41 2/DIODE smd marking code UM 41
Contextual Info: CENTRAL SEMICONDUCTOR SDE D • n ù T ìL B DODOSlb T i f i ■ CEN SMD Zener Diode SO D -80 Case 500m W U.S. Specification Preferred Series The Central Semiconductor CLL5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial, commercial,

SMD TRANSISTOR H2A NPN

Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
Contextual Info: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

TRANSISTOR SMD MARKING CODE w6

Abstract: SMD TRANSISTOR MARKING 5H
Contextual Info: CENTRAL SEPIICONDUCTOR naoasm 5 DE D 01 5 • SMD Zener Diode SOT-23 Case 350mW cen T - W - o ° \ U.S. Specification Preferred Series The Central Semiconductor CMPZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial,

Contextual Info: Transistors IC SMD Type NPN Silicon Power Transistor 2SD2211 SOT- 89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 ● High breakdown voltage. 1.80±0.1 2.50±0.1 4.00±0.1 ● Low collector output capacitance. ● High transition frequency . 0.44±0.1 0.40±0.1

SMD M2A transistor

Abstract: 6 pin TRANSISTOR SMD CODE XI TRANSISTOR SMD MARKING CODE M2A K TRANSISTOR SMD MARKING CODE T04 TRANSISTOR SMD MARKING CODE XI SMD M2A pnp transistor transistor SMD t04 TRANSISTOR SMD MARKING CODE KE sla 6102 transistor SMD t15
Contextual Info: SIEMENS fl23SbOS OOTbbOl 5 -V L ow -D ro p Fixed V oltage Regulator M2a T L E 4269 Features • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Early warning Reset output low doown to VQ = 1 V Overtemperature protection

LM7805 M SMD

Abstract: LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v
Contextual Info: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

PTF141501A

Abstract: LM7805 smd P02B LM7805 Application Notes on LM7805 lm7805 p transistor smd marking ND smd transistor marking ND transistor 45 f 122 smd transistor bcp56
Contextual Info: PTF141501A High Power RF LDMOS Field Effect Transistor 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501A is a150-watt, GOLDMOS FET intended for DAB applications. The device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Full gold metallization ensures excellent

d59 smd 6-pin

Abstract: minimold SMD IC MARKING GP transistor C1z SMD MARKING GP TRANSISTOR C2H marking
Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2762TB,µPC2763TB,µPC2771TB 3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION µPC2762TB, µPC2763TB and µPC2771TB are silicon monolithic integrated circuits designed as amplifier for

LM7805 M SMD

Abstract: LM7805 smd C5 MARKING TRANSISTOR lm7805 datasheet future LM7805 smd 8 pin elna 50v transistor smd marking ND LM7805 PTF180101M TPSE106K050R0400
Contextual Info: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small

siemens 4261-2

Abstract: a4s smd transistor smd transistor A4S smd transistor zd MARKING SMD PNP TRANSISTOR FR TRANSISTOR smd FQ siemens 4261 smd transistor marking 327 siemens automotive air temperature sensors TLE 4271 G
Contextual Info: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4261-2 Preliminary Data Bipolar 1C Features • • • • • • • • • • • • • • High accuracy 5 V + 2% Very low-drop voltage Very low quiescent current Low starting-current consumption Proof against reverse polarity

smd TRANSISTOR 1702

Contextual Info: Preliminary PTF180901A High Power RF LDMOS Field Effect Transistor 90 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180901A is a 90-watt, internally-matched GOLDMOS FET intended for EDGE applications in the DCS/PCS bands. Full gold metallization ensures excellent device lifetime and reliability.

Contextual Info: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency P–1dB . Full gold metallization ensures excellent device lifetime

PTF141501E

Abstract: PTF141501A LM7805 smd philips smd 1206 resistor transistor smd marking ND LM7805 smd lm7805 LM7805 M SMD SCHEMATIC DIAGRAM 3.3kv BCP56
Contextual Info: Preliminary PTF141501E PTF141501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E and PTF141501E are 150-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital

A 673 C2 transistor

Abstract: LM7805 smd smd lm7805 Application Notes on LM7805 smd transistor marking l6 transistor SMD LOA SCHEMATIC DIAGRAM 3.3kv transistor smd marking ND BCP56 P13KGCT-ND
Contextual Info: PTF141501E Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E is a 150-watt, GOLDMOS FET intended for DAB applications. This device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Thermally-enhanced packaging

smd transistor A006

Contextual Info: PTF141501E Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E is a 150-watt, GOLDMOS FET intended for DAB applications. This device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Thermally-enhanced packaging

LM7805 smd

Abstract: LM7805 smd transistor marking C14
Contextual Info: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency

ujt 2646

Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
Contextual Info: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!