MARKING SS34 Search Results

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

s10p40

Abstract: C53l SS34 sma SS54 smb K4 SOD SK24 equivalent SK34 smc diode s14L SSM14APT SSM5819SLPT
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Equivalent Current Voltage Surge Current Outline Circuit @ 25°C TA @ 25°C TA @ 8.3mS NO. Diagram IR IFM Surge

s10p40

Abstract: SCM54 SCM35 SBM19 SCM84 SSM19 SCM32 Ssm34 SBM14 SSM35
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Current Voltage Surge Current Outline @ 25°C TA @ 25°C TA @ 8.3mS NO. IR IFM VFM IFM Surge Adc APK

Contextual Info: Surface Mount Schottky Diodes Operating Temperature: -65o C to 150°C VF V Max. Part No. Device Marking Code Pd (mW) PIV (V) Min. IR (µA) Max. @ 0.1 mA @ 1.0 mA @ 2.0 mA @ 10 mA @ 15 mA @ 20 mA @ 30 mA @ @ 40/50 100/200 mA mA @ 250 mA TR R (nS) Max. Outline

Contextual Info: SS34L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level : level 1, per J-STD-020

Contextual Info: SS34L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity: level 1, per J-STD-020

Schottky

Contextual Info: SS34L thru SS310L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

SS34L

Abstract: subsma MARKING CODE A13
Contextual Info: Preliminary SS34L creat by art 3.0AMPS Surface Mount Schottky Barrier Rectifiers Sub SMA Features — For surface mounted application — Low-Profile Package — Idea for automated pick & place — High current capability, low VF — High surge current capability

1SS348

Contextual Info: TOSHIBA 1SS348 TOSHIBA DIODE 1 SS348 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • • + 0.5 2.5 -0.3 Low Forward Voltage : Vp 3 = 0.56V (Typ.) Low Reverse Current : Ir = 5/j A (Max.) Small Package : SC-59 + 0.25

Contextual Info: 1SS349 TOSHIBA TOSHIBA DIODE i SS349 SILICON EPITAXIAL SCH OTT KY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. • • • +0.5 2 5 -0.3 + 0.25 1.5 - 0-15 Low Forward Voltage : Vp 3 = 0.49V (Typ.) Low Reverse Current : I r = 50//A (Max.) Small Package

1SS344

Contextual Info: TOSHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5 -0.3 • Low Forward Voltage : Vp 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I q = 0.5A (Max.)

Contextual Info: New Product SS32S, SS33S & SS34S Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability

SS33S

Abstract: SS34S SS32S
Contextual Info: New Product SS32S, SS33S & SS34S Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability

MARKING 34S DO-214AC

Contextual Info: SS32S, SS33S, SS34S www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability

Contextual Info: New Product SS32S, SS33S, SS34S Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability

Contextual Info: SS32S, SS33S, SS34S www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability

Contextual Info: SS32, SS33, SS34, SS35, SS36 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

smc diode marking s6 vishay

Contextual Info: SS32-M3, SS33-M3, SS34-M3, SS35-M3, SS36-M3 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

marking sm RG DO-214AA

Abstract: marking SS24 ss34 sk S1M DO-214AC
Contextual Info: S1A THRU S1M SURFACE MOUNT RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere DO-214AC FEATURES 0.065 1.65 ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mounted applications ♦ Low profile package

marking cj4

Abstract: s6 smc schottky marking code s4 SMc S4 SMB MARKING CODE S1M SMA SJ SMB marking SS24 SMC MARKING SJ marking ED smb SS16 SMB
Contextual Info: 1/2 HIGH POWER SINGLE DIODES RECTIFIER & SCHOTTKY BARRIER DIODES • RECTIFIER DIODES AVAILABLE UP TO 1,000V AND 3A • SCHOTTKY BARRIER DIODES AVAILABLE UP TO 60V AND 3A • SURGE OVERLOAD RATING EITHER 40A, 50A OR 100A • UL 94V-0 PLASTIC PACKAGE ACCEPTS HIGH TEMP. SOLDERING: 250˚C FOR 10s AT TERMINALS

Contextual Info: Formosa MS Chip Schottky Barrier Rectifier FM320 THRU FM3200 List List. 1 Package outline. 2