MARKING SYMBOL M1U Search Results

MA3J742

Contextual Info: Schottky Barrier Diodes SBD MA3J742 Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • Two MA3X716s are contained in one package (2-pin series connection) • Optimum for low-voltage rectification because of its low forward

Contextual Info: Schottky Barrier Diodes SBD MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Rating Unit Reverse voltage (DC) VR 30 V Peak forward current

marking symbol M1U

Abstract: MARKING M1U MA716
Contextual Info: Schottky Barrier Diodes SBD MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 5° Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V IF 30 mA Forward current (DC) Single Series *

MA3X716

Contextual Info: Schottky Barrier Diodes SBD MA3X716 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Symbol Peak forward current Single Forward current (DC) Single 1.45 0.95 3 + 0.1 0.16 − 0.06 0.8 + 0.2 1.1 − 0.1 Rating VR 30 V 150 mA Series 1 : Anode 1 2 : Cathode 2

F600M

Abstract: S08230 l32 sot23 hp 3080 diode MARK, g5 sot23
Contextual Info: ¥J>0%. HEWLETT ft "Em PACKARD Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodea Optimized fo r Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface M ount SOT-23

MA716

Abstract: MARKING M1U
Contextual Info: MA111 Schottky Barrier Diodes SBD MA716 Silicon epitaxial planer type Unit : mm +0.2 For switching For wave detection circuit 2.8 –0.3 +0.25 1.5 –0.05 ● Low forward rise voltage VF , optimum for low-voltage rectification ● Fast reverse recovery time trr, optimum for high-frequency rectifica-

MARKING M1U

Contextual Info: MA111 Schottky Barrier Diodes SBD MA742 Silicon epitaxial planer type Unit : mm For the switching circuit 2.1±0.1 0.425 1.25±0.1 0.425 ● Low forward rise voltage VF , optimum for low-voltage rectification ● Fast reverse recovery time trr, optimum for high-frequency rectifica-

pmb 400 - s

Abstract: SIEMENS ks siemens s PMB 2200 PMB2400
Contextual Info: SIEMENS Quadrature Phase Modulator Transmitter Circuit PMB 2200 P relim inary Data Bipolar 1C Features • • • • • • • • • • • • • • • Double-balanced mixers Direct modulation Linear modulating inputs Symmetrical circuitry Generation of orthogonal carriers without

8850MP-XX

Abstract: 8850MP
Contextual Info: Advanced Power Electronics Corp. APU8850 150mA ULTRA LOW DROPOUT POSITIVE ADJUSTABLE AND FIXED REGULATORS DESCRIPTION FEATURES The APU8850 device is an efficient linear voltage regulator with better than 2% initial voltage accuracy, very low dropout voltage and very low ground current designed

APU8850-33

Abstract: marking code mp SOT-89 APU8850 APU8850X-XX APU8850Y5
Contextual Info: Advanced Power Electronics Corp. APU8850 150mA ULTRA LOW DROPOUT POSITIVE ADJUSTABLE AND FIXED REGULATORS DESCRIPTION FEATURES The APU8850 device is an efficient linear voltage regulator with better than 2% initial voltage accuracy, very low dropout voltage and very low ground current designed

MA3S781F

Contextual Info: Schottky Barrier Diodes SBD MA3S781F Silicon epitaxial planar type For high speed switching circuits Unit: mm 0.28±0.05 0.80±0.05 Reverse voltage VR 30 V Maximum peak reverse voltage VRM 30 V Peak forward current Series Single Series 30 IF 150 Junction temperature

Contextual Info: Schottky Barrier Diodes SBD MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3X716 (MA716) is contained in one package (series connection) • Forward voltage VF , optimum for low voltage rectification

MA3J742

Abstract: MA3X716 MA716 MA742
Contextual Info: Schottky Barrier Diodes SBD MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3X716 (MA716) is contained in one package (double connection) • Forward voltage VF , optimum for low voltage rectification

MARKING 103

Abstract: marking symbol M1U MA3X704A MA3X716 MA704A MA716
Contextual Info: Schottky Barrier Diodes SBD MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Parameter 0 to 0.1 Symbol Rating Unit VR 30 V Maximum peak reverse voltage

MA3S781F

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781F Silicon epitaxial planar type For high speed switching circuits Unit: mm 0.28±0.05 0.80±0.05 Reverse voltage VR 30 V Maximum peak reverse voltage VRM 30

MA3X704A

Abstract: MA3X716 MA704A MA716
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05

ma3j742

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3X716 (MA716) is contained in one package (series

MA3J742

Abstract: MA3X716 MA716 MA742
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3X716 (MA716) is contained in one package (series

MA3S781F

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781F Silicon epitaxial planar type For high speed switching circuits Unit: mm 0.28±0.05 0.80±0.05 Reverse voltage VR 30 V Maximum peak reverse voltage VRM 30

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05

marking symbol M1U

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781FG Silicon epitaxial planar type For high speed switching circuits For wave detection • Package  Features  Code SSMini3-F3  Pin Name 1: Anode 1 2: Cathode 2

MA3J742

Abstract: MA3X716 MA716 MA742
Contextual Info: Schottky Barrier Diodes SBD MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 5° Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V IF 30 mA Forward current (DC) Single Series *

MA716

Abstract: MA3X716 panasonic ma diodes sc-59 Marking
Contextual Info: Schottky Barrier Diodes SBD MA3X716 (MA716) Unit : mm + 0.2 Silicon epitaxial planar type 2.8 − 0.3 0.65 ± 0.15 1.45 0.95 1.5 1 0.95 3 + 0.1 0.4 − 0.05 + 0.2 2.9 − 0.05 For switching circuits For wave detection circuit 1.9 ± 0.2 0.65 ± 0.15 + 0.25

MA3S781F

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781F Silicon epitaxial planar type For high speed switching circuits Unit: mm 0.28±0.05 0.80±0.05 • Features VR 30 V VRM 30 V 30 Single Junction temperature