MARKING W1S Search Results

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

TRANSISTOR MARKING YB

Abstract: sot36 3904P marking code Yb Transistor 70 sot3-6
Contextual Info: SIEMENS SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package -Q - Marking on SOT-3 6 3 package (for example W1sj

infineon marking W1s SOT23

Abstract: marking W1S sot23 infineon marking W1s transitor RF 98 BFT92 bft92 datasheet w1s sot23 30227 BFR92p application note marking code 10 sot23
Contextual Info: BFT92 PNP Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents up to 30 mA 2 3 • Complementary type: BFR92P NPN 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFT92 Marking W1s Pin Configuration

VPS05604

Contextual Info: BAS 16S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2

BAS16S

Abstract: VPS05604 4C3 diode
Contextual Info: BAS16S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2

30227

Abstract: IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23
Contextual Info: BFT 92 PNP Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz at collector currents up to 20 mA
Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92 W1s

BFT92

Abstract: 30227 infineon marking W1s marking W1S sot23 transistor Bft92 infineon marking W1s SOT23 W1S SOT23
Contextual Info: BFT92 PNP Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz at collector currents up to 20 mA
Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration

infineon marking W1s SOT23

Abstract: BFT92 w1s sot23 marking W1S sot23 30227 BCW66 E6327
Contextual Info: BFT92 PNP Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz at collector currents up to 20 mA
Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration

SMBTA06UPN

Abstract: SC74
Contextual Info: SMBTA06UPN NPN/PNP Silicon AF Transistor Array 5
High breakdown voltage 4 6
Low collector-emitter saturation voltage
Two galvanic internal isolated NPN/PNP 3 Transistors in one package 2 Tape loading orientation 1 Marking on SC74 package (for example W1s)

Transistor BFT 98

Abstract: Transistor BFR 900mhz 75167 BFt 65 infineon marking W1s RF NPN POWER TRANSISTOR C 10-12 GHZ 30227 Transistor BFT 10 GHz PNP transistor bft92w
Contextual Info: BFT 92W PNP Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz at collector currents up to 20 mA
Complementary type: BFR 92W NPN 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92W W1s

infineon marking W1s SOT23

Abstract: marking W1S sot23
Contextual Info: BFT92 PNP Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz at collector currents up to 20 mA
Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration

Contextual Info: SMBTA06UPN NPN/PNP Silicon AF Transistor Array 5
High breakdown voltage 4 6
Low collector-emitter saturation voltage
Two galvanic internal isolated NPN/PNP 3 Transistors in one package 2 Tape loading orientation 1 Marking on SC74 package (for example W1s)

Contextual Info: SMBTA06UPN NPN/PNP Silicon AF Transistor Array 5
High breakdown voltage 4 6
Low collector-emitter saturation voltage
Two galvanic internal isolated NPN/PNP 3 Transistors in one package 2 Tape loading orientation 1 Marking on SC74 package (for example W1s)

Contextual Info: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4 • For mixer applications in the VHF / UHF range 5 • For high-speed switching applications 6 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device

Contextual Info: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4
For mixer applications in the VHF / UHF range 5 6
For high-speed switching applications Tape loading orientation Top View 654 2 Marking on SOT-363 package for example W1s corresponds to pin 1 of device

BAT62-08S

Abstract: VPS05604
Contextual Info: BAT62-08S Silicon Schottky Diode Array Preliminary data 4
Low barrier diode for detectors up to GHz 5 6 frequencies 2 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1 VPS05604

Contextual Info: BAT68-08S 4 Silicon Schottky Diode Array 5 6
For mixer application in the VHF/UHF range
For high-speed switching applications 2 3 1 VPS05604 Tape loading orientation Top View 6 5 4 Marking on SOT-363 package for example W1s corresponds to pin 1 of device

marking code 62 3 pin diode

Contextual Info: BAT 62-08S Silicon Schottky Diode Array Preliminary data 4 • Low barrier diode for detectors up to GHz 5 6 frequencies Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 2 1 3

Marking w1s sot

Abstract: VPS05604 Device Marking A3 top marking c3 MARKING w1s sot363
Contextual Info: BAS 70-08S Silicon Schottky Diode Array
General-purpose diode for high-speed switching 4
Circuit protection 5 6
Voltage clamping
High-level detecting and mixing Tape loading orientation 2 Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device

BAT68-08S

Abstract: VPS05604 diode array MARKING A3
Contextual Info: BAT68-08S 4 Silicon Schottky Diode Array 5 6 Preliminary data
For mixer application in the VHF/UHF range
For high-speed switching applications 2 3 1 VPS05604 Tape loading orientation Top View 6 5 4 Marking on SOT-363 package for example W1s corresponds to pin 1 of device

VPS05604

Contextual Info: %$7 6 6LOLFRQ 6FKRWWN\ 'LRGH $UUD\ 3UHOLPLQDU\ GDWD 4 • Low barrier diode for detectors up to GHz 5 6 frequencies 7DSH ORDGLQJ RULHQWDWLRQ Top View 654 2 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1

Transistor BFT 92W

Abstract: 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681
Contextual Info: BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

30227

Abstract: Transistor BFT 10 Q62702-F1062 w1s sot23
Contextual Info: BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BFT92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration