MARKING WTS SOT Search Results

transistor marking code wts

Abstract: sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor
Contextual Info: SIEMENS BCR 166 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=4.7ki2, R2=47kfl Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23

MARKING CODE T7s

Abstract: MARKINGCODET7s
Contextual Info: SIEM ENS BCR 166W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=4.7kiî, R2=47kfi TT IF Type Marking Ordering Code Pin Configuration BCR 166W WTs UPON INQUIRY 1=B Package 2=E

transistor marking code wts

Contextual Info: BCR 166W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 166W WTs 1=B UPON INQUIRY Package 2=E 3=C SOT-323

1207A

Contextual Info: SIEMENS BCR 166 PNP Silicon Digital Transistor *Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=4.7kfl, R2=47k£2 Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23 Maximum Ratings

transistor marking code wts

Abstract: transistor marking code wts 15
Contextual Info: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs

transistor marking code wts

Abstract: sot-23 WTs sot-23 marking WTs Q62702-C2339
Contextual Info: BCR 166 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23 Maximum Ratings

marking WTS sot23

Abstract: TRANSISTOR wts WTs transistor BCR166 wts sot23 BCR166F BCR166L3 BCR166T BCR166W SC75
Contextual Info: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs

BCR166W

Abstract: VSO05561
Contextual Info: BCR166W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR166W WTs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR166W

Abstract: VSO05561
Contextual Info: BCR166W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR166W WTs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR166

Contextual Info: BCR166 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R 1=4.7k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR166 WTs Pin Configuration 1=B 2=E Package 3=C SOT23

transistor marking code wts

Abstract: BCR108T BCR166 BCR166F BCR166L3 BCR166T BCR166W SC75 STP8
Contextual Info: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs

BCR166

Contextual Info: BCR166 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R 1=4.7k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR166 WTs Pin Configuration 1=B 2=E Package 3=C SOT23

VSO05561

Contextual Info: BCR 166W PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 166W WTs Pin Configuration 1=B 2=E Package

Contextual Info: BCR 166 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R 1=4.7k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 166 WTs Pin Configuration 1=B 2=E Package 3=C

transistor marking code wts

Abstract: BCR108W BCR166 BCR166F BCR166W BCW66 bcr1
Contextual Info: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BCR166/F BCR166W

Contextual Info: BCR166./SEMB13 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W SEMB13 C C1 B2 3 6 5 E2 4 R2 R1 R1 TR2 TR1 R2 R1 R2 1 B 2 1 2

Contextual Info: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR166 BCR166W C 3

transistor marking code wts

Contextual Info: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR166 BCR166W C 3

Contextual Info: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit •Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47ki2, R2 = 47k£2 PNP: R1 = 2.2k£ì, R2 = 47k£2

Contextual Info: SIEMENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array »Switching circuit, inverter, interface circuit, drive circuit * Two galvanic internal isolated NPN/PNP Transistor in one package • Built In bias resistor (R ^IO kiî, R2=47kiî) Tape loading orientation

transistor marking code wts

Abstract: Marking W1s
Contextual Info: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ

transistor bc 577

Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
Contextual Info: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47k£2, R2 = 47kQ PNP: R1 = 2.2kfl, R2 = 47ki2

transistor digital 47k 22k PNP NPN

Abstract: VPS05604 "two TRANSISTORs" sot-363 pnp npn WTs12 Marking wts sot
Contextual Info: BCR 48PN NPN/PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated NPN/PNP Transistors in one package • Built in bias resistor 2 1 NPN: R1 = 47kΩ, R2 = 47kΩ

transistor digital 47k 22k PNP NPN

Abstract: BCR48PN VPS05604
Contextual Info: BCR48PN NPN/PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated NPN/PNP Transistors in one package
Built in bias resistor 2 1 NPN: R1 = 47k, R2 = 47k VPS05604 PNP: R1= 2.2k, R 2 = 47k