MARKING WUS SOT Search Results

Contextual Info: SIEMENS BCR 162 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drivere circuit * Built in bias resistor R1=4.7ki2, R2=4.7kQ Type BCR 162 Marking Ordering Code Pin Configuration WUs 1=B Q62702-C2378 Package 2=E 3=C SOT-23

Marking WUS sot

Contextual Info: BCR 162W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drivere circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 162W WUs 1=B UPON INQUIRY Package 2=E 3=C SOT-323

Contextual Info: SIEMENS BCR 162 PNP Silicon Digital Transistor »Switching circuit, inverter, interface circuit, drivere circuit »Built in bias resistor R-|=4.7kii, R2=4.7kQ □ ET Type Marking Ordering Code Pin Configuration BCR 162 WUs Q62702-C2378 1=B Package 2=E 3=C

Q62702-C2378

Abstract: Marking WUS sot
Contextual Info: BCR 162 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drivere circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 162 WUs 1=B Q62702-C2378 Package 2=E 3=C SOT-23

BCR162

Contextual Info: BCR162 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR162 WUs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR162

Contextual Info: BCR162 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR162 WUs Pin Configuration 1=B 2=E Package 3=C SOT23

DIN 6784

Abstract: BCR162F SOT23 WU BCR108T BCR162 BCR162L3 BCR162T E6327 SC75
Contextual Info: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B

Contextual Info: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B

BCR162F

Abstract: BCR162 BCR162L3 BCR162T SC75
Contextual Info: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B

Contextual Info: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B

Contextual Info: BCR 162 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 162 WUs Pin Configuration 1=B 2=E Package 3=C SOT-23

BCR162F

Abstract: BCR162 BCW66
Contextual Info: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BCR162/F C 3 R1 R2

iC101

Abstract: IC-101 Marking WUS sot BCR35PN VPS05604 CONFIGURATION OF IC IC Marking AC 6 PIN
Contextual Info: BCR35PN NPN/PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated NPN/PNP Transistors in one package
Built in bias resistor (R1=10k, R2=47k) 2 3 1 VPS05604 Tape loading orientation

Contextual Info: SIEMENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array »Switching circuit, inverter, interface circuit, drive circuit * Two galvanic internal isolated NPN/PNP Transistor in one package • Built In bias resistor (R ^IO kiî, R2=47kiî) Tape loading orientation

Marking WUS sot

Abstract: transistor Common collector configuration Common collector configuration pnp array Q62702-C2495
Contextual Info: BCR 35PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=10kΩ, R2=47kΩ) Tape loading orientation

Contextual Info: SIEM ENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (Rj=10kiJ, F<2=47kQ) Tape loading orientation

Marking WUS sot

Abstract: MARKING CODE wus SOT363
Contextual Info: BCR35PN NPN/PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated NPN/PNP Transistors in one package
Built in bias resistor (R1=10k, R2=47k) 2 3 1 VPS05604 Tape loading orientation

MARKING CODE wus SOT363

Abstract: BCR-35PN MARKING CODE W1s MARKING WUs Infineon BCR35PN
Contextual Info: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1 =10 kΩ, R2 =47 kΩ)

infineon marking W1s

Abstract: BCR108S BCR35PN
Contextual Info: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2=47 kΩ)

Contextual Info: BCR35PN NPN/PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated NPN/PNP Transistors in one package
Built in bias resistor (R1=10k, R2=47k) 2 3 1 VPS05604 Tape loading orientation

Contextual Info: BCR162 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR162 C 3 R1 R2 1 B 2

Contextual Info: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =47 kΩ)

Contextual Info: BCR162 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR162 C 3 R1 R2 1 B 2

marking 215

Abstract: MARKING CODE wus SOT363 pin configuration of ic IC Marking AC 6 PIN
Contextual Info: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =47 kΩ)