MARKING ZA MOSFET Search Results

2N7000BU

Abstract: 2N7000BU/2N7000TA
Contextual Info: 2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features Description • • • • • These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products minimize onstate resistance while providing rugged, reliable, and fast

Intersil

Abstract: MOSFET TRANSISTOR SMD MARKING CODE ZA TSMC 0.13um process specification transistor smd marking za sot-23
Contextual Info: Ordering Nomenclature I NTERSIL N OMENCLATURE GUIDE Intersil Nomenclatures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 ISL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

transistor smd marking za sot-23

Abstract: MOSFET TRANSISTOR SMD MARKING CODE ZA TRANSISTOR SMD MARKING CODE KE sot-23 MARKING CODE ZA TRANSISTOR SMD MARKING CODE TK SMD MARKING CODE sdp intersil MARKING CODE ZA RF TRANSISTOR SMD MARKING CODE TK TW6817-LA1-GR smd transistor marking code XC
Contextual Info: Ordering Nomenclature I NTERSIL N OMENCLATURE GUIDE Intersil Nomenclatures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 ISL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

IRF3205 application

Abstract: IRF32305S marking za mosfet MOSFET MARKING ZA
Contextual Info: PD - 9.1304B International IQ R Rectifier IRF3205S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF32305S Low-profile through-hole (IRF3205L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55V R d s (oh) = 0.008Q

XP202A

Abstract: XP202A0003 single diode sot-23 mark pd A9 marking diode sot23 12Represents sot-23 single diode mark PD SOT-23 MOSFET P-CHANNEL a1 1- mark
Contextual Info: XP202A0003MR-G ETR1128-003 P-channel 4V G-S MOSFET •FEATURES ■APPLICATIONS ・Low On Resistance ・Ultra High Speed Switching ・4V Driving ・EU RoHS Compliant, Pb Free ● Switching ■PRODUCT NAME * ■ ABSOLUTE MAXIMUM RATINGS PARMETER SYMBOL RATINGS

marking za sot89

Abstract: XP202A0003 102 marking
Contextual Info: XP202A0003PR-G ETR1129-003 P-channel 4V G-S MOSFET •FEATURES ■APPLICATION ■用途 ● Switching ・Low On Resistance ・Ultra High Speed Switching ・4V Driving ・EU RoHS Compliant, Pb Free ■PRODUCT NAME PRODUCT NAME PACKAGE ORDER UNIT XP202A0003PR-G

Contextual Info: Ordering number : EN8993A ECH8420 N-Channel Power MOSFET http://onsemi.com 20V, 14A, 6.8mΩ, Single ECH8 Features • • • • ON-resistance RDS on 1=5.2mΩ (typ.) 1.8V drive. Halogen free compliance. Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C

CPH3425

Abstract: MARKING ZA
Contextual Info: 5Ordering number : ENN7529 CPH3425 N-Channel Silicon MOSFET CPH3425 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2152A [CPH3425] 2.9 0.15 0.4 0.6 3 0.2 • 2 1

74232 ic

Abstract: 74232 CPH6424 ic 74232
Contextual Info: Ordering number : ENN7423 CPH6424 N-Channel Silicon MOSFET CPH6424 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2151A [CPH6424] 0.15 2.9 5 4 0.6 6 0.2 • 0.6 1.6

Contextual Info: PD 9.1414A International IO R Rectifier IR L M S 6 7 0 2 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channei MOSFET . * «1 : n V q ss J f , * *| O'— JJ — G ~ iJ L-f~ s = -20V ^ D S (o n ) =

ECH8420

Abstract: MARKING ZA MOSFET MARKING ZA
Contextual Info: ECH8420 Ordering number : EN8993 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8420 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=5.2mΩ (typ.) 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C

CF-121

Abstract: ALG TRANSISTOR ALG Transistor MARKING 50B4DIN41867
Contextual Info: TELEFUNKEN ELECTRONIC fltUKFOilKlKtlKl electronic Û1C D • ê'iSOO'Jb DODSBH'J 1 7~ S / ~ 2 ^ ~ C F 121 Creative Technologies N-Channel-GaAs-M ESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;

Contextual Info: ECH8420 Ordering number : EN8993A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8420 General-Purpose Switching Device Applications Features • • • • ON-resistance RDS on 1=5.2mΩ (typ.) 1.8V drive. Halogen free compliance. Protection diode in

xc8102aa01n

Abstract: xc8102
Contextual Info: XC8102 Series ETR2502-008 Load Switch with Low On-Resistance Current Limit 400mA •GENERAL DESCRIPTION The XC8102 series is a low ON resistance load switch IC with ON/OFF control and output current protection which integrates a P-channel MOSFET. By connecting the XC8102 to the output pin of a step-down DC/DC converter, the CE pin controls ON/OFF for each

Contextual Info: XC8102 Series ETR2502-008 Load Switch with Low On-Resistance Current Limit 400mA GENERAL DESCRIPTION The XC8102 series is a low ON resistance load switch IC with ON/OFF control and output current protection which integrates a P-channel MOSFET. By connecting the XC8102 to the output pin of a step-down DC/DC converter, the CE pin controls ON/OFF for each

Contextual Info: XC8102 Series ETR2502-009 Load Switch with Low On-Resistance Current Limit 400mA •GENERAL DESCRIPTION The XC8102 series is a low ON resistance load switch IC with ON/OFF control and output current protection which integrates a P-channel MOSFET. By connecting the XC8102 to the output pin of a step-down DC/DC converter, the CE pin controls ON/OFF for each

VT5365

Abstract: laptop battery diagram schematic MARKING SMD npn TRANSISTOR za hs49 detector wheel mouse sensor STV-365-R0X IR SENSOR wheel mouse BS308 STMicroelectronics smd DIODE marking code BSS138
Contextual Info: VT5365 Single chip optical/laser mouse sensor for wireless applications Features Description • One chip solution with internal microprocessor and minimal external circuitry ■ 1.8 V single battery or 2.0 V to 3.2 V (serial batteries) supply operation

P150l10 capacitor

Abstract: capacitor 275L20 thermistor 420l40 P2754 1010 P20V275 P2754 P1502 CAPACITOR varistor P275L20 P275L20 equivalent to P275L40
Contextual Info: PRODUCT CATALOG & DESIGN GUIDE Circuit Protection Products Littelfuse Circuit Prot Solutions Port Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop

Disc ceramic capacitor GE 130L20

Abstract: P1502 CAPACITOR P150l10 capacitor GE CERAMIC DISC CAPACITOR 130L10 GE 100z15 VARISTOR equivalent to P275L40 ge VARISTOR 130L20 P510L80 varistor P275L20 P2754 1010
Contextual Info: PRODUCT CATALOG & DESIGN GUIDE Circuit Protection Products Littelfuse Circuit Prot Solutions Port Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop

MOSFET TRANSISTOR SMD MARKING CODE ZA

Abstract: SC-101
Contextual Info: SO T8 83 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: SO T8 83 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: XC6224 Series ETR0340-006 1.2V Low Voltage Operation,150mA High Speed LDO Voltage Regulator GENERAL DESCRIPTION The XC6224 series is a high speed LDO regulator that features high accurate, low noise, high ripple rejection, low dropout and low power consumption. The series consists of a voltage reference, an error amplifier, a driver transistor, a current limiter,

Contextual Info: XC6420 Series ETR0352-007 150mA Small Dual LDO Regulator with ON/OFF Switch GENERAL DESCRIPTION The XC6420 series is a small dual CMOS LDO regulator with 2-channel 150mA outputs. The series features high speed, high accuracy, high ripple rejection and low dropout voltage. The series is capable of high density board installation by the

MOSFET TRANSISTOR SMD MARKING CODE ZA

Abstract: smd code marking HD smd diode marking a1 BSS84AKM
Contextual Info: SO T8 83 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench