MARKING ZI SOT Search Results

marking ZI

Abstract: marking ZI SOT KTN2369S
Contextual Info: SEMICONDUCTOR KTN2369S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking ZI No. 1 Item Marking Device Mark ZI KTN2369S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

MARKING CODE Zi sot363

Abstract: TMF3201J ZI Marking Code transistor MOSFET 9935
Contextual Info: TMF3201J Semiconductor Dual Gate MOSFET □ Description The TMF3201J is an N-channel enhancement type, dual- SOT-363 insulated gate, field-effect transistor that utilizes MOS Unit in mm construction. It consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads. The source

marking ZI SOT

Abstract: VEBO-15V 2SC4366 Low frequency amplifier
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4366 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 Low Frequency amplifier. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LTE21015R FEATURES PINNING - SOT44QA • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR

MARKING FZ

Abstract: BAS19W BAS20W BAS21W marking kt3
Contextual Info: BAS19W-BAS21W VISHAY SURFACE MOUNT FAST SWITCHING DIODE Ì LITEM ZI POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-323

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B35Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency

142 transistor

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LTE42012R FEATURES PINNING - SOT44QA • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D034 RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of 1997 Feb 18 1999 Dec 24 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A

DS30002

Abstract: MCL4448
Contextual Info: MCL4448 VISHAY SURFACE MOUNT FAST SWITCHING DIODE y LITEM ZI POWER SEMICONDUCTOR Features • • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance Fits on SOD-323 / SOT-23 Footprint

marking zo sot -6

Contextual Info: FJX597J FJX597J Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic 2 1 SOT-323 1. Drain 2. Source 3. Gate Si N-channel Junction FET

MMBD7000

Contextual Info: MMBD7000 VISHAY DUAL SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWER SEMICONDUCTOR Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 -H ; h - A 7 B Mechanical Data

KL31

Abstract: 100S BAV23S marking kl31 sot23
Contextual Info: BAV23S V IS H A Y SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 m 1

100S

Abstract: BAW56W
Contextual Info: PRELIM INARY BAW56W VISHAY DUAL SURFACE MOUNT SWITCHING DIODE Ì LITEM ZI POW ER SEMICONDUCTOR Features Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance SOT-323 -H : h -A B C _±_ Mechanical Data_

MMBD914

Abstract: JJ sot23 diode
Contextual Info: MMBD914 VISHAY SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWERSEMICONDUCTOR Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 -H ; h - A t B Mechanical Data

SOT-23 MARKING ka6

Abstract: ba816 Vishay Diode BAS16 BAS16 marking KA6 DS12003
Contextual Info: BAS 16 V IS H A Y SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 -H Ih-A

BA831

Abstract: DS1101 BAS31 sot-23 k21 marking K21
Contextual Info: BAS31 V IS H A Y DUAL SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23

100S

Abstract: BAV70W
Contextual Info: PRELIM INARY BAV70W VISHAY DUAL SURFACE MOUNT SWITCHING DIODE Ì LITEM ZI POW ER SEMICONDUCTOR Features Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance SOT-323 -H : h -A b \ k I Mechanical Data_

ka2 DIODE

Abstract: MARKING KA2 SOT-23 MMBD4148 marking HA 7 sot23
Contextual Info: MMBD4148 VISHAY SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWERSEMICONDUCTOR Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 -H ; h - A t B Mechanical Data

100S

Abstract: BAS16W MMBD4148W
Contextual Info: PRELIM INARY MMBD4148W / BAS16W VISHAY SURFACE MOUNT FAST SWITCHING DIODE Ì LITEM ZI POWER SEMICONDUCTOR Features Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance SOT-323 - H ;h-A I + Mechanical Data_

BAV99W

Abstract: BAV99W peak temperature
Contextual Info: BAV99W VISHAY DUAL SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWER SEMICONDUCTOR Features Fast Switching Speed Ultra-small Surface Mount Package For General Purpose Switching Applications High Conductance SOT-323 -H : h -A 4 I Mechanical Data I I top j V ie w |

Diode SOT-23 marking JE

Abstract: Diode bav99 kje KJE BAV99 kje vishay bav99 general bav99 vishay BAV99 application Diode bav99 BAV99 KJE SOT-23
Contextual Info: BAV99 V IS H A Y DUAL SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWER SEMICONDUCTOR Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 I iI Mechanical Data

SOT-23 2D

Abstract: Vishay MMBTA42 MMBTA42 MMBTA92
Contextual Info: MMBTA92 v isH A Y PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Type Available M M BTA42 Ideal for Medium Power Amplification and Switching SOT-23 TOR VIEW

MMBT4124

Abstract: MMBT4126 DS30105
Contextual Info: MMBT4124 VISHAY NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available M M B T4126 Ideal for Medium Power Amplification and Switching SOT-23 - H ;h“ A T TOPÌ VIEW

k72 transistor sot 23

Abstract: transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23
Contextual Info: 2N7002-01 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~ *\ : h - A TOP VIEW