LTE21015R Search Results

Contextual Info: J_£, N AMER PHILIPS/DISCRETE ObE D • bb53T31 0014^3=1 1 ■ LKE2015T MAINTENANCE TYPE for new design use LTE21015R T-23-^5" MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich

RTC144

Abstract: LKE2015T LTE21015R
Contextual Info: N AUER PHILIPS/DISCRETE ObE D • ^53=131 G O I M ^ MAINTENANCE TYPE 1 ■ LKE20Ï5T for new design use LTE21015R T - 2 3 - 0 5 - M ICROW AVE LINEAR POW ER TRANSISTO R N-P-N transistor for use in a common-emitter ciass-A linear power amplifier up to 2 GHz.

LKE21015T

Abstract: LTE21015R
Contextual Info: N AMER PHILIPS/DISCRETE ObE D • bbS3T31 0014^43 3 ■ II ' MAINTENANCE TYPE for newdesignuse LTE21015R J LKE21015T 3 3 ~ ¿7S ' I MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

R3305 transistor

Contextual Info: N AMER PHILIPS/DISCRETE DbE D bb53T31 0014^43 3~" • A MAINTENANCE TYPE for new design use LTE21015R LKE21015T T - 3 3 -OS’ MICROW AVE LINEAR POW ER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

lte2

Abstract: 0261 230 154 LTE21009R LTE21015R
Contextual Info: DEVELOPMENT DATA | • T his data sheet contains advance Inform ation and specifications are subject to change w ithout notice. - bbSBT31 0 0 1 ^ 5 7 3 ■ LTE21009R LTE21015R Jl N AMER P H I L I P S / D I S C R E T E ObE D -

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LTE21015R FEATURES PINNING - SOT44QA • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR

MCD628

Abstract: LTE21015R SC15 SOT440A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LTE21015R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor

d 317 transistor

Abstract: LTE21015R common emitter amplifier b 342 d transistor
Contextual Info: LTE21015R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LTE21015R is Designed for Class A Common Emitter Amplifier Applications to 2.3 GHz. FEATURES INCLUDE: PACKAGE STYLE .250 2L FLG • Replacement for Philips LTE21015R • Gold Metalization • Emitter Ballasting

Contextual Info: b b S B ' m DD14TS7 3 D E V E L O P M E N T DATA This data sheet contains advance Information and specifications are subject to change without notice. LTE21009R LTE21015R 11' N ANER PHILIPS/DISCRETE ObE D M ICROW AVE LINEAR POW ER TRA N SISTO R N-P-N silicon transistor for use in common-emitter class-A linear power amplifiers up to 4,2 GHz.

LTE21015R

Abstract: SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LTE21015R PINNING - SOT44QA FEATURES • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

Philips Semiconductors Selection Guide

Abstract: LTE42005S BLS2731-10
Contextual Info: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

Contextual Info: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Microwave transistors RF & MICROWAVE SEMICONDUCTORS & MODULES CONTINUOUS POWER TYPES f ^CE *C P r L1 ^ Gp° 3 GHz) (V) (mA) (mW) (dB) 1 2 2 2 2.1 2.1 2.1 2.3 2.3 4 4 4.2 4.2 4.2 20 18

LTE-3201

Abstract: FO-163 lte4002s LBE2003S LBE2009S LCE2003S LCE2009S LTE21009R LUE2009S
Contextual Info: N AMER P HILIPS/DISCRETE SSE D • t.bS3T31 D01fc,E32 S ■ T - 5 3-0/ 54 Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. f PACKAGE OUTLINE GHzv Vce m : ic (mAX - Gpo - ' ' P L l'” . (W (dB) CLASS A, MEDIUM POWER LAË6000Q LBE2003S

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

1B200Y

Abstract: MRB11040W
Contextual Info: 68 RF/Microwave Devices M icrow ave Transistors, Pulsed Power cont. Type No. Package Outline (V) tp @ (us) 40 40 40 40 40 40 40 40 24 40 40 24 50 45 50 50 50 50 50 50 50 50 50 50 50 50 50 vcc f (GHz) Duty Cycle Pl TTC (% ) (W) GP (dB) (% ) 100 100 100 100

Contextual Info: N AMER PHILIPS/DISCRETE E5E D btiS3131 DOltEBS S • T -Z S-O l Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE f Vce GHZ y f” Tc ' (mAX ' - - PL1<i. (W Gpo* (dB) CLASS A, MEDIUM POWER LAE6000Q LBE2003S LCE2003S

MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40

1721E50R

Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
Contextual Info: Philips Semiconductors Microwave Transistors Marking codes MARKING CODES The microwave transistors in this book are normally marked with manufacturer’s name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking