MAS3781 Search Results

MAS3781E

Contextual Info: Schottky Barrier Diodes SBD MAS3781E Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V IF 30

Contextual Info: Schottky Barrier Diodes SBD MAS3781 Silicon epitaxial planar type Unit: mm For switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 2 0.15 min. 1 0.23+0.05 –0.02 0.15 min. M Di ain sc te on na tin nc ue e/ d • High-density mounting is possible • Optimum for high frequency rectification because of its short

MAS3781

Contextual Info: Schottky Barrier Diodes SBD MAS3781 Silicon epitaxial planar type Unit: mm For switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 0.15 min. 5˚ ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in

Contextual Info: Schottky Barrier Diodes SBD MAS3781 Silicon epitaxial planar type Unit: mm For switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 5˚ • High-density mounting is possible • Optimum for high frequency rectification because of its short

MAS3781E

Contextual Info: Schottky Barrier Diodes SBD MAS3781E Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 Peak reverse voltage Forward current (DC) Single

MAS3781

Contextual Info: Schottky Barrier Diodes SBD MAS3781 Silicon epitaxial planar type Unit: mm For switching circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 0.52±0.03 5° Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30

MAS3781E

Contextual Info: Schottky Barrier Diodes SBD MAS3781E Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5° 1 0.23+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 0.52±0.03 5° Rating Unit Reverse voltage (DC)

MAS3781

Contextual Info: Schottky Barrier Diodes SBD MAS3781 Silicon epitaxial planar type Unit: mm For switching circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5˚ • High-density mounting is possible • Optimum for high frequency rectification because of its short reverse recovery time trr

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

transistor 2sc5609

Abstract: 2sc5609 MAS3781E 2sc5609 transistor 2SD2621
Contextual Info: New Subminiature Surface-Mount Package SSS Mini 3-Pin Package Series n Overview The Subminiature Surface-Mount Package Series with 1.2 mm x 0.8 mm x 0.52 mm in external size will contribute to the production of downsized, lightweight, and low-profile devices. In addition, the flat-lead structure of the