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    MATCHING MOSFET Search Results

    MATCHING MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MATCHING MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4422 mosfet

    Abstract: MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501
    Text: APPLICATION NOTE 30 MATCHING MOSFET DRIVERS TO MOSFETs MATCHING MOSFET DRIVERS TO MOSFETs AN-30 INTRODUCTION V TelCom offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/MOSFET to the application.


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    PDF AN-30 TC4424 4422 mosfet MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501

    siliconix ld120

    Abstract: zener diode 20v 0.5w sanyo 6TPE220MI LTC3731 LTC3731H LTC3731HG "ic works" IRF7821W 042V Nippon capacitors
    Text: LTC3731H 3-Phase, 600kHz, Synchronous Buck Switching Regulator Controller Description Features 3-Phase Current Mode Controller with Onboard MOSFET Drivers n ±5% Output Current Matching Optimizes Thermal Performance and Size of Inductors and MOSFETs n ±2% V


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    PDF LTC3731H 600kHz, 225kHz 680kHz 12-Phase LTC3853 250kHz 750kHz LTC3850/ LTC3850-1/ siliconix ld120 zener diode 20v 0.5w sanyo 6TPE220MI LTC3731 LTC3731H LTC3731HG "ic works" IRF7821W 042V Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: FEATURES GE PACKAGE ! Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE MODE Class AB


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    PDF HVV1012-2

    LTC3731G

    Abstract: Nippon capacitors
    Text: LTC3731 3-Phase, 600kHz, Synchronous Buck Switching Regulator Controller DESCRIPTION FEATURES 3-Phase Current Mode Controller with Onboard MOSFET Drivers n ±5% Output Current Matching Optimizes Thermal Performance and Size of Inductors and MOSFETs n Differential Amplifier Accurately Senses V


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    PDF LTC3731 600kHz, 600kHz 250kHz 770kHz, 750kHz LTC3869/LTC3869-2 LTC3731G Nippon capacitors

    AD5242

    Abstract: jedec MS-012-AC 2N7002 AD5241 FDV301N OP279 OP42 EVAL-AD5242EBZ AD52421M
    Text: I2C-Compatible, 256-Position Digital Potentiometers AD5241/AD5242 FEATURES APPLICATIONS Multimedia, video, and audio Communications Mechanical potentiometer replacement Instrumentation: gain, offset adjustment Programmable voltage-to-current conversion Line impedance matching


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    PDF 256-Position AD5241/AD5242 AD5241 16-Lead AD5242 jedec MS-012-AC 2N7002 AD5241 FDV301N OP279 OP42 EVAL-AD5242EBZ AD52421M

    transistor f 948

    Abstract: transistor 936 j78 transistor J31 transistor GP 948 UF28150J UF2815OJ DS-175 pd233
    Text: UF28150J PRELIMINARY POWER MOSFET TRANSISTOR 150 WATTS, 100 - 500 MHz, 28 V OUTLINE DRAWING FEATURES • N-Channel Enhancement Mode Device • Applications • 150 Watts CW • Common Source Gemini Configuration • RESFET Structure • Internal Input Impedance Matching


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    PDF UF28150J transistor f 948 transistor 936 j78 transistor J31 transistor GP 948 UF2815OJ DS-175 pd233

    Untitled

    Abstract: No abstract text available
    Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN845 Matching System Dead Time to MOSFET Parameters in ZVS Circuits by Sanjay Havanur Medium- and high-voltage power MOSFETs are used in a variety of isolated converter topologies, such as half- or full-bridges


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    PDF AN845 06-Oct-14

    LTC3731

    Abstract: LTC3731CG LTC3731CUH LTC3731IG LTC3731IUH LTC3731G
    Text: LTC3731 3-Phase, 600kHz, Synchronous Buck Switching Regulator Controller DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3-Phase Current Mode Controller with Onboard MOSFET Drivers ±5% Output Current Matching Optimizes Thermal


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    PDF LTC3731 600kHz, 600kHz SSOP-36 5A/40A, TSSOP-20 3731fa LTC3731 LTC3731CG LTC3731CUH LTC3731IG LTC3731IUH LTC3731G

    Untitled

    Abstract: No abstract text available
    Text: LET9120M RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120 W with 18 dB gain @ 860 MHz ■ Internal input matching


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    PDF LET9120M LET9120M

    M252

    Abstract: 865 RF transistor LET9120M
    Text: LET9120M RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120 W with 18 dB gain @ 860 MHz ■ Internal input matching


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    PDF LET9120M LET9120M M252 865 RF transistor

    PO102

    Abstract: No abstract text available
    Text: 10V Drive Nch MOSFET RLD2BPNK2 A long-run product with market-driven high reliability. Matching to various needs. This is the laser diode for high-speed print corresponding laser printers. zDimensions Unit : mm Equivalent circuit diagram φ2.0±0.2 90°±0.2°


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    PDF CW10mW PO102

    NTMF4834NS

    Abstract: sensefet CAT2300 marking f3t NTMFS4833NST1G CAT2300VP2-GT3 marking code E2 logic gate vk marking 6 pin ic
    Text: CAT2300 Current Mirror and Switch Controller for SENSEFET MOSFETs Description CAT2300 is a controller for SENSEFET MOSFET current monitoring in high-side switch applications. CAT2300 provides current mirroring and ON/OFF control for SENSEFET MOSFETs. Exact control and matching of the Sense


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    PDF CAT2300 NTMFS4833NST1G, NTMFS4854NST1G CAT2300/D NTMF4834NS sensefet marking f3t NTMFS4833NST1G CAT2300VP2-GT3 marking code E2 logic gate vk marking 6 pin ic

    Matching MOSFET Drivers to MOSFETs

    Abstract: POWER MOSFET 4600 TC4422 AN799 Matching MOSFET Drivers to MOSFETs fet 4816 multiple mosfet gate driver Dual Gate MOSFET graphs an799 mosfet cross reference MOSFET A3
    Text: AN799 Matching MOSFET Drivers to MOSFETs Author: Jamie Dunn Microchip Technology Inc. 2. Power dissipation due to quiescent current draw of the MOSFET driver. EQUATION 2: INTRODUCTION There are many MOSFET technologies and silicon processes in existence today, with new advances being


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    PDF AN799 r4-7200 D-85737 NL-5152 DS00799B-page Matching MOSFET Drivers to MOSFETs POWER MOSFET 4600 TC4422 AN799 Matching MOSFET Drivers to MOSFETs fet 4816 multiple mosfet gate driver Dual Gate MOSFET graphs an799 mosfet cross reference MOSFET A3

    sensefet

    Abstract: CAT2300
    Text: CAT2300 Current Mirror and Switch Controller for SENSEFET MOSFETs Description CAT2300 is a controller for SENSEFET MOSFET current monitoring in high-side switch applications. CAT2300 provides current mirroring and ON/OFF control for SENSEFET MOSFETs. Exact control and matching of the Sense


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    PDF CAT2300 CAT2300 NTMFS4833NST1G, NTMFS4854NST1G CAT2300/D sensefet

    M252

    Abstract: SD57120 XSD57120
    Text: SD57120  RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs ν ν ν ν ν EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 120 W with 13 dB gain @ 960 MHz BeO FREE PACKAGE INTERNAL INPUT MATCHING


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    PDF SD57120 SD57120 M252 XSD57120

    MRFE6VP8600H

    Abstract: MRFE6VP UT-141C-25 C3225X7R2A225KT UT-141C CRCW120610R0JNEA mrfe6vp8600hs C19C40 ATC200B ATC20
    Text: Document Number: MRFE6VP8600H Rev. 0, 9/2011 Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


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    PDF MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 MRFE6VP UT-141C-25 C3225X7R2A225KT UT-141C CRCW120610R0JNEA mrfe6vp8600hs C19C40 ATC200B ATC20

    M252

    Abstract: SD56120M
    Text: SD56120M RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 120 W with 13 dB gain @ 860 MHz • BeO FREE PACKAGE M252 • INTERNAL INPUT MATCHING


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    PDF SD56120M SD5120M SD56120M M252

    Untitled

    Abstract: No abstract text available
    Text: SD57120  RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 120 W with 13 dB gain @ 960 MHz BeO FREE PACKAGE INTERNAL INPUT MATCHING


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    PDF SD57120 SD57120 XSD57120

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


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    PDF MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5

    200B

    Abstract: 20AWG 700B M252 SD57120
    Text: SD57120 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 120 W WITH 13 dB gain @ 960 MHz • BeO FREE PACKAGE M252 epoxy sealed • INTERNAL INPUT MATCHING


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    PDF SD57120 SD57120 TSD57120 200B 20AWG 700B M252

    C3225X7R2A225KT

    Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


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    PDF MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 C3225X7R2A225KT 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0

    595D

    Abstract: AN19 FDS6688 LTC3731 LTC3731CG LTC3731CUH T510
    Text: Final Electrical Specifications LTC3731 3-Phase, 600kHz, Synchronous Buck Switching Regulator Controller February 2003 DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ±5% Output Current Matching Optimizes Thermal Performance and Size of Inductors and MOSFETs


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    PDF LTC3731 600kHz, 250kHz 600kHz 12-Phase, SSOP-36 TSSOP-20 LTC3832 LTC4008 3731i 595D AN19 FDS6688 LTC3731 LTC3731CG LTC3731CUH T510

    20AWG

    Abstract: M252 SD57120 XSD57120 C22j SC13460
    Text: SD57120 RF POWER TRANSISTORS The Ldm oS T FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs . . • . . EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL P o u t = 120 W with 13 dB gain @ 960 MHz BeO FREE PACKAGE INTERNAL INPUT MATCHING


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    PDF SD57120 SD57120 XSD57120 30mil sc14920 080X45 20AWG M252 XSD57120 C22j SC13460

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON $ PTF 10022 65 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10022 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1,0 GHz. Its push-pull configuration allows for simpler broadband matching. It is rated


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