4422 mosfet
Abstract: MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501
Text: APPLICATION NOTE 30 MATCHING MOSFET DRIVERS TO MOSFETs MATCHING MOSFET DRIVERS TO MOSFETs AN-30 INTRODUCTION V TelCom offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/MOSFET to the application.
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AN-30
TC4424
4422 mosfet
MOSFET 4420
Matching MOSFET Drivers to MOSFETs
parallel mosfet
4469 mosfet
use of zener diode
4420 mosfet
mosfet 4468
4422 dual mosfet
irf4501
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siliconix ld120
Abstract: zener diode 20v 0.5w sanyo 6TPE220MI LTC3731 LTC3731H LTC3731HG "ic works" IRF7821W 042V Nippon capacitors
Text: LTC3731H 3-Phase, 600kHz, Synchronous Buck Switching Regulator Controller Description Features 3-Phase Current Mode Controller with Onboard MOSFET Drivers n ±5% Output Current Matching Optimizes Thermal Performance and Size of Inductors and MOSFETs n ±2% V
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LTC3731H
600kHz,
225kHz
680kHz
12-Phase
LTC3853
250kHz
750kHz
LTC3850/
LTC3850-1/
siliconix ld120
zener diode 20v 0.5w
sanyo 6TPE220MI
LTC3731
LTC3731H
LTC3731HG
"ic works"
IRF7821W
042V
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: FEATURES GE PACKAGE ! Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE MODE Class AB
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HVV1012-2
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LTC3731G
Abstract: Nippon capacitors
Text: LTC3731 3-Phase, 600kHz, Synchronous Buck Switching Regulator Controller DESCRIPTION FEATURES 3-Phase Current Mode Controller with Onboard MOSFET Drivers n ±5% Output Current Matching Optimizes Thermal Performance and Size of Inductors and MOSFETs n Differential Amplifier Accurately Senses V
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LTC3731
600kHz,
600kHz
250kHz
770kHz,
750kHz
LTC3869/LTC3869-2
LTC3731G
Nippon capacitors
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AD5242
Abstract: jedec MS-012-AC 2N7002 AD5241 FDV301N OP279 OP42 EVAL-AD5242EBZ AD52421M
Text: I2C-Compatible, 256-Position Digital Potentiometers AD5241/AD5242 FEATURES APPLICATIONS Multimedia, video, and audio Communications Mechanical potentiometer replacement Instrumentation: gain, offset adjustment Programmable voltage-to-current conversion Line impedance matching
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256-Position
AD5241/AD5242
AD5241
16-Lead
AD5242
jedec MS-012-AC
2N7002
AD5241
FDV301N
OP279
OP42
EVAL-AD5242EBZ
AD52421M
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transistor f 948
Abstract: transistor 936 j78 transistor J31 transistor GP 948 UF28150J UF2815OJ DS-175 pd233
Text: UF28150J PRELIMINARY POWER MOSFET TRANSISTOR 150 WATTS, 100 - 500 MHz, 28 V OUTLINE DRAWING FEATURES • N-Channel Enhancement Mode Device • Applications • 150 Watts CW • Common Source Gemini Configuration • RESFET Structure • Internal Input Impedance Matching
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UF28150J
transistor f 948
transistor 936
j78 transistor
J31 transistor
GP 948
UF2815OJ
DS-175
pd233
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Untitled
Abstract: No abstract text available
Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN845 Matching System Dead Time to MOSFET Parameters in ZVS Circuits by Sanjay Havanur Medium- and high-voltage power MOSFETs are used in a variety of isolated converter topologies, such as half- or full-bridges
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AN845
06-Oct-14
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LTC3731
Abstract: LTC3731CG LTC3731CUH LTC3731IG LTC3731IUH LTC3731G
Text: LTC3731 3-Phase, 600kHz, Synchronous Buck Switching Regulator Controller DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3-Phase Current Mode Controller with Onboard MOSFET Drivers ±5% Output Current Matching Optimizes Thermal
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LTC3731
600kHz,
600kHz
SSOP-36
5A/40A,
TSSOP-20
3731fa
LTC3731
LTC3731CG
LTC3731CUH
LTC3731IG
LTC3731IUH
LTC3731G
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Untitled
Abstract: No abstract text available
Text: LET9120M RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120 W with 18 dB gain @ 860 MHz ■ Internal input matching
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LET9120M
LET9120M
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M252
Abstract: 865 RF transistor LET9120M
Text: LET9120M RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120 W with 18 dB gain @ 860 MHz ■ Internal input matching
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LET9120M
LET9120M
M252
865 RF transistor
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PO102
Abstract: No abstract text available
Text: 10V Drive Nch MOSFET RLD2BPNK2 A long-run product with market-driven high reliability. Matching to various needs. This is the laser diode for high-speed print corresponding laser printers. zDimensions Unit : mm Equivalent circuit diagram φ2.0±0.2 90°±0.2°
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CW10mW
PO102
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NTMF4834NS
Abstract: sensefet CAT2300 marking f3t NTMFS4833NST1G CAT2300VP2-GT3 marking code E2 logic gate vk marking 6 pin ic
Text: CAT2300 Current Mirror and Switch Controller for SENSEFET MOSFETs Description CAT2300 is a controller for SENSEFET MOSFET current monitoring in high-side switch applications. CAT2300 provides current mirroring and ON/OFF control for SENSEFET MOSFETs. Exact control and matching of the Sense
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CAT2300
NTMFS4833NST1G,
NTMFS4854NST1G
CAT2300/D
NTMF4834NS
sensefet
marking f3t
NTMFS4833NST1G
CAT2300VP2-GT3
marking code E2 logic gate
vk marking 6 pin ic
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Matching MOSFET Drivers to MOSFETs
Abstract: POWER MOSFET 4600 TC4422 AN799 Matching MOSFET Drivers to MOSFETs fet 4816 multiple mosfet gate driver Dual Gate MOSFET graphs an799 mosfet cross reference MOSFET A3
Text: AN799 Matching MOSFET Drivers to MOSFETs Author: Jamie Dunn Microchip Technology Inc. 2. Power dissipation due to quiescent current draw of the MOSFET driver. EQUATION 2: INTRODUCTION There are many MOSFET technologies and silicon processes in existence today, with new advances being
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AN799
r4-7200
D-85737
NL-5152
DS00799B-page
Matching MOSFET Drivers to MOSFETs
POWER MOSFET 4600
TC4422
AN799 Matching MOSFET Drivers to MOSFETs
fet 4816
multiple mosfet gate driver
Dual Gate MOSFET graphs
an799
mosfet cross reference
MOSFET A3
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sensefet
Abstract: CAT2300
Text: CAT2300 Current Mirror and Switch Controller for SENSEFET MOSFETs Description CAT2300 is a controller for SENSEFET MOSFET current monitoring in high-side switch applications. CAT2300 provides current mirroring and ON/OFF control for SENSEFET MOSFETs. Exact control and matching of the Sense
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CAT2300
CAT2300
NTMFS4833NST1G,
NTMFS4854NST1G
CAT2300/D
sensefet
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M252
Abstract: SD57120 XSD57120
Text: SD57120 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs ν ν ν ν ν EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 120 W with 13 dB gain @ 960 MHz BeO FREE PACKAGE INTERNAL INPUT MATCHING
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SD57120
SD57120
M252
XSD57120
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MRFE6VP8600H
Abstract: MRFE6VP UT-141C-25 C3225X7R2A225KT UT-141C CRCW120610R0JNEA mrfe6vp8600hs C19C40 ATC200B ATC20
Text: Document Number: MRFE6VP8600H Rev. 0, 9/2011 Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices
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MRFE6VP8600H
MRFE6VP8600HR6
MRFE6VP8600HR5
MRFE6VP8600HSR6
MRFE6VP8600HSR5
MRFE6VP
UT-141C-25
C3225X7R2A225KT
UT-141C
CRCW120610R0JNEA
mrfe6vp8600hs
C19C40
ATC200B
ATC20
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M252
Abstract: SD56120M
Text: SD56120M RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 120 W with 13 dB gain @ 860 MHz • BeO FREE PACKAGE M252 • INTERNAL INPUT MATCHING
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SD56120M
SD5120M
SD56120M
M252
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Untitled
Abstract: No abstract text available
Text: SD57120 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 120 W with 13 dB gain @ 960 MHz BeO FREE PACKAGE INTERNAL INPUT MATCHING
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SD57120
SD57120
XSD57120
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices
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MRFE6VP8600H
MRFE6VP8600HR6
MRFE6VP8600HR5
MRFE6VP8600HSR6
MRFE6VP8600HSR5
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200B
Abstract: 20AWG 700B M252 SD57120
Text: SD57120 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 120 W WITH 13 dB gain @ 960 MHz • BeO FREE PACKAGE M252 epoxy sealed • INTERNAL INPUT MATCHING
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SD57120
SD57120
TSD57120
200B
20AWG
700B
M252
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C3225X7R2A225KT
Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices
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MRFE6VP8600H
MRFE6VP8600HR6
MRFE6VP8600HR5
MRFE6VP8600HSR6
MRFE6VP8600HSR5
C3225X7R2A225KT
8-30VDC
74C125
UT-141C-25
rf Amplifier mhz Doherty 470-860
Rogers RO4350B microstrip
ATC100B240JT500X
capacitor 104 Z30
470-860 mhz Power amplifier w
ATC-100B-3R0
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595D
Abstract: AN19 FDS6688 LTC3731 LTC3731CG LTC3731CUH T510
Text: Final Electrical Specifications LTC3731 3-Phase, 600kHz, Synchronous Buck Switching Regulator Controller February 2003 DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ±5% Output Current Matching Optimizes Thermal Performance and Size of Inductors and MOSFETs
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LTC3731
600kHz,
250kHz
600kHz
12-Phase,
SSOP-36
TSSOP-20
LTC3832
LTC4008
3731i
595D
AN19
FDS6688
LTC3731
LTC3731CG
LTC3731CUH
T510
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20AWG
Abstract: M252 SD57120 XSD57120 C22j SC13460
Text: SD57120 RF POWER TRANSISTORS The Ldm oS T FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs . . • . . EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL P o u t = 120 W with 13 dB gain @ 960 MHz BeO FREE PACKAGE INTERNAL INPUT MATCHING
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SD57120
SD57120
XSD57120
30mil
sc14920
080X45
20AWG
M252
XSD57120
C22j
SC13460
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Untitled
Abstract: No abstract text available
Text: ERICSSON $ PTF 10022 65 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10022 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1,0 GHz. Its push-pull configuration allows for simpler broadband matching. It is rated
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