MAY10 Search Results

Contextual Info: May 10 '02 S.Yoshiwatari May 10 '02 S.Miyashita T. Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

2a2 SOT-23

Abstract: marking code BB bb814
Contextual Info: BB 814 Silicon Variable Capacitance Diode 3 • For FM radio tuners with extended frequency band • High tuning ratio at low supply voltage car radio • Monolithic chip (common cathode) for perfect dual diode tracking 2 • Coded capacitance groups and group matching

Contextual Info: Dual N-channel MOSFET ELM34802AA-N •General description ■Features ELM34802AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=4.5A Rds(on) < 68mΩ (Vgs=10V) Rds(on) < 98mΩ (Vgs=5V)

Contextual Info: AK8125AE Spread Spectrum Clock Generator AK 8 1 2 5 AE Features Description Input Frequency: The AK8125A is a spread spectrum clock generator designed for general purpose EMI elimination. The device uses the AKM’s original spread spectrum profile to provide excellent EMI

GSD4e

Abstract: SiRFstarIV GSD4e SiRFStarIV A2100-A SiRFLive User Manual SiRFstarIV GSD4e NMEA EVA2100-A GSD4 FT232RL GPS 112
Contextual Info: GPS SiRFstarIV Evaluation Kit EVA2100-A A Description of the Evaluation Board for Vincotech’s SiRFstarIV GPS Receiver Module A2100-A User’s Manual Version 0.4 Hardware Revision 51 PRELIMINARY Revision History Rev. 0.1 0.2 0.3 0.4 Date 03-15-10 04-13-10

Contextual Info: AUe Rechte vorbehalten/ Ml rights resemi 3 RECOMMANDED PANEL CUTOUT DIMENSIONS FOR REAR MOUNTING nut t hread 2,77 Values are taken from the CECC 75 5 0 1 - 80 2 54,6 4 B □□□□□□□□□□□ Di m p l e s 20,80 p r e - c r i m p i n g p o s i t i o n

AOL1718

Contextual Info: AOL1718 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AOL1718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is ideally

ms1099

Contextual Info: AK8125AE Spread Spectrum Clock Generator AK8125AE Features Description Input Frequency: The AK8125A is a spread spectrum clock generator designed for general purpose EMI elimination. The device uses the AKM’s original spread spectrum profile to provide excellent EMI

53ND12-Y

Abstract: FBR53ND10-Y-HW FBR53ND12-Y FBR53 FBR53ND09-Y FBR53ND09-Y-HW FBR53ND10-Y FBR53ND12-Y-HW ND012
Contextual Info: COMPACT POWER RELAY 1 POLE—20 A For Automotive Applications FBR53 SERIES n FEATURES Compact for high density packaging High contact capability (40A continuous) l High temperature grade (-40˚C to 125˚C) l Contact arrangement Form U (form A) l l n ORDERING INFORMATION

Contextual Info: Dual N-channel MOSFET ELM34802AA-N •General description ■Features ELM34802AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=4.5A Rds(on) < 68mΩ (Vgs=10V) Rds(on) < 98mΩ (Vgs=5V)

MAY-10-02

Contextual Info: S c h e m a tic : ONE OF TWO n 1CT: 1 8 '1 TX RJ45 o- 6 O- 7 ORX 4 O- 3 O- f- Shld 1CT: 1CT 2 O- R1 < R2 R3 R4 L. .J 1 R1 ,R2,R3,R4: 75 OHMS 1 0.001 uF 1KV “P E lectrical S p ecifica tio n s: @25°C Isolation Voltage: 1500 Vrm s (INPUT to OUTPUT) Isolation Voltage:

Contextual Info: Target Specification TENTATIVE (450A/1200V-6in1 IGBT Module) IGBT Module This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any

Contextual Info: Technical Data Sheet LOCTITE 3593 May-2005 PRODUCT DESCRIPTION LOCTITE® 3593™ provides the following product characteristics: Technology Epoxy Chemical Type Epoxy Appearance uncured Black liquidLMS Components One component - requires no mixing Cure

6074

Contextual Info: CUSTOMER PROOFING/CONFORMANCE FORM Attention of: Tyco Electronics Drawing No.: - Name: Paul-Ehrlich-Str. 23 63322 Rödermark Signature: 1 1 1 1 Date: 1 1 1 1 Correction required Correct & Proceed Accepted Telephone: +49 0 6074 8908 (0) Facsimile: +49(0) 6074 8908 82

ELM34802AA

Contextual Info: 双 N 沟道 MOSFET ELM34802AA-N •概要 ■特点 ELM34802AA-N 是 N 沟道低输入电容低工作电压、 •Vds=30V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=4.5A ·Rds on < 68mΩ (Vgs=10V) ·Rds(on) < 98mΩ (Vgs=5V) ■绝对最大额定值

Contextual Info: デュアルパワー N チャンネル MOSFET ELM34802AA-N •概要 ■特長 ELM34802AA-N は低入力容量 低電圧駆動、 低 ・ Vds=30V オン抵抗という特性を備えた大電流デュアルパワー ・ Id=4.5A MOSFET です。 ・ Rds on < 68mΩ (Vgs=10V)

Contextual Info: May 10 '02 S.Yoshiwatari May 10 '02 S.Miyashita T. Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

L1088C-3.3A

Abstract: 8A SOT-89 MARKING 06 SOT89 5c sot-89 Voltage Regulator LDO low drop out L1088C-X marking 43 sot-89
Contextual Info: NIKO-SEM 600mA Fixed and Adjustable Low Dropout Linear Regulator LDO L1088 Series SOT-89 GENERAL DESCRIPTION FEATURES The L1088 Series are positive and low drop- out three-terminal voltage regulators with 600mA output current capability. These devices are designed for use in low voltage