MB8125 Search Results

327T

Abstract: 527 16C MB81257 MB81257-80 MB8266A
Contextual Info: FUJITSU February 1990 Edition 1.0 DATA SHEET M B81257-80 MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY 262,144 Bit Dynamic Random Access Memory The Fujitsu MB81257 is a fully decoded, dynamic NMOS random access memory organized as 262,144one-bit words. The design is optimized lor high speed,

MB81256-15

Abstract: Transistor z1p 81256-15 mb81256
Contextual Info: February 1990 Edition 5.0 FUJITSU DATA SHEET MB81256-10/-12/-15 MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY 262,144 Bit Dynamic Random Access Memory The Fujitsu MB81256 is a fully decoded, dynamic NMOS random access memory organized as 262,144 one-bit words. The design is optimized for high speed,

Contextual Info: FUJITSU MICROELECTRONICS 47E D 3 7 4 cl 7 b 2 February 1990 Edition 2.0 DATA SHEET : □ □ l ci 2 4 3 S • F M I FUJITSU M B 8 1 2 5 6 -8 0 MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY 262,144 Bit Dynamic Random Access Memory The Fujitsu MB81256 is a fully decoded, dynamic NMOS random access

MB81257-15

Abstract: MB81257 MB81257-12
Contextual Info: February 1990 Edition 5.0 FUJITSU DATA SHEET MB81257-10/-12/-15 MOS 262,144-BIT DYNAMIC RANDOM ACCESS MEMORY 262,144-Bit Dynamic Random Access Memory The Fujitsu MB81257 is a fully decoded, dynamic NMOS random access memory organized as 262,144 one-bit words. The design is optimized for high speed,

MB81257-12

Abstract: 40t036 MB81257-15 z1p 10 MB81257 5081M M881257-15 81257 40t036l 40t03
Contextual Info: FUJITSU February 1990 Edition 5.0 DATA SHEET MB81257-10/-12/-15 MOS 262.144-BIT DYNAMIC RANDOM ACCESS MEMORY 262,144-Bit Dynamic Random Access Memory The Fujitsu MB81257 is a fully decoded, dynamic NMOS random access memory organized as 262,144 one-bit words. The design is optimized for high speed,

Contextual Info: T - V f c - ^ S - '/ O FU JI TSU M7E J> MICROELECTRONICS February 1990 Edition 1.0 DATA SHEET 37MT7L.2 QQllBfl? _ 3 «FUI FUJITSU M B81257-80 MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY 262,144 Bit Dynamic Random Access Memory The Fujitsu MB81257 Is a fully decoded, dynamic NMOS random access

Contextual Info: February 1990 Editori 2.0 DATA SHEET FUJITSU MB81256-80 MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY 262,144 Bit Dynamic Random Access Memory The Fujitsu MB81256 is a fully decoded, dynamic NMOS random access memory organized as 262,144 one-bit words. The design is optimized for high speed,

Contextual Info: FU JITSU MOS Memories • MB85204-10, MB85204-12, MB85204-15 262,144 X 4-Bit Dynamic Random Access Memory SIP Module Description The Fujitsu MB85204 is a fully decoded, 262,144 word x 4-bit NMOS dynamic random access memory module consisting of four MB81256 DRAMs in 18-pad LCC packages mounted on a 24-pin

MB81256

Abstract: MB85204-10 MB85204-12 MB85204-15 MBS5204 CRS15
Contextual Info: F U J IT S U MOS Memories • MB85204-10, MB85204-12, MB85204-15 262,144 X 4-Bit Dynamic Random Access Memory SIP Module Description The Fujitsu MB85204 is a fully decoded, 262,144 word x 4-bit NMOS dynamic random access memory module consisting of four MB81256 DRAMs in 18-pad LCC packages mounted on a 24-pin

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

ic 81256 ram

Abstract: mb81256 3GJK 66010-2
Contextual Info: February 1990 Edition 2.0 FUJITSU DATASHEET M B 8 1 2 5 6 -8 0 MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY 262,144 Bit Dynamic Random Access Memory The Fujitsu MB81256 is a fully decoded, dynamic NMOS random access memory organized as 262,144 one-bit words. The design is optimized for high speed,

Y423

Abstract: 81256
Contextual Info: FU J I T S ^ M I C R O E lT c T r ' o N I C S 7 fi D Ë J 37 M T 7 t.S 0005031 3 M O S M e m o rie s • M B 8 1 2 5 6 - 1 2 - W , y^.^3 .^- F U J IT S U M B 8 1 2 5 6 - 1 5 - W NMOS 262,144-Bit Dynamic Random Access Memory D e s c rip tio n The Fujitsu MB81256-W is a fully decoded, dynamic NMOS ran­

ftm 230

Abstract: MB81256 MB85211-12 MB85211-15
Contextual Info: P relim inary F U J IT S U MOS Memories • MB85211-12, MB85211-15 524,288 X 4-Bit Dynamic Random Access Memory SIP Module The Fujitsu MB85211 is a -fully decoded, 524,288 word x 4-bit NM O S dynam ic random access m em ory m odule consisting of eight MB81256 DR AM s in 18-pad LC C packages m ounted on a 24-pin

Contextual Info: February 1990 Edition 1.0 - . FUJITSU DATA SHEET M B 8 1 2 5 7 -8 0 MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY 262,144 Bit Dynamic Random Access Memory The Fujitsu MB81257 Is a fully decoded, dynamic NMOS random access memory organized as 262,144 one-bit words. The design is optimized lor high speed,

DIP16PW

Contextual Info: /U MOS Memories Ji\f_ FUJITSU MB81257-10, MB81257-12, MB81257-15 NMOS 262,144-Bit Dynamic Random Access Memory With Nibble Mode Description The Fujitsu MB81257 is a fully decoded, dynamic NMOS random access memory organized as 262,144 one-bit words. The design is

Contextual Info: FU JITSU MOS M em o ries • M B 8 52 08 -12 , M B 85208-15 1,048,576 x 1-Bit Dynamic Random Access Memory SIP Module Description The Fujitsu MB85208 is a fully decoded, 1,048,576 word x 1-bit NMOS dynamic random access memory module consisting of four MB81257 DRAMs in 18-pad LCC packages mounted on a 22-pin

MB81464-10

Contextual Info: Section 1 NMOS DRAMs — At a Glance Pag« Devlo* Maximum A co « m Tim« na Capacity 1-3 MBS1256-10 -12 100 120 262144 bits (262144wx 1b) -15 150 16-pin 16-pin 18-pin 18-pad Plastic Ceramic Plastic Ceramic DIP. ZIP DIP LCC LCC 1-25 MB81257-10 -12 -1 5 100

MB81257-15

Abstract: MB81257-12
Contextual Info: February 1990 Edition 5.0 FUJITSU DATA SHEET MB81257-10/-12/-15 MOS 262,144-BIT DYNAMIC RANDOM ACCESS MEMORY 262,144-Bit Dynamic Random Access Memory The Fujitsu MB81257 is a fully decoded, dynamic NMOS random access memory organized as 262,144 one-bit words. The design is optimized for high speed,

transistor FGW

Abstract: MB81257 MBB1257-12-W
Contextual Info: 3749762~FUJITSU* MI CRÛ £ LECTRON ICS FUJITSU MICROELECTRONICS 7Û 78c 02847 D E | 374^7^2 Q0DEÛ47 7 | FUJITSU M OS M em ories • M B 8 1 2 5 7 -1 2 -W , M B 8 1 2 5 7 -1 5 -W NMOS 262,144-Bit Dynamic Random Access Memory With Nibble Mode Description The Fujitsu MB81257-W Is a fully decoded, dynamic NMOS ran­

M881256-XXTV

Abstract: 81256-15 mb81256 MB81256-15 M881256-XXP M8812 81256-10
Contextual Info: February 1990 Edition S.O FUJITSU DATA SHEET MB81256-10/-12/-15 MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY 262,144 Bit Dynamic Random Access Memory The Fujitsu MB81256 is a fully decoded, dynamic NMOS random access memory organized as 262,144 one-bit words. The design is optimized for high speed,

81256

Abstract: MB81256-XXPSZ MB81256 MB81256-80 MB8266A DD 127 D TRANSISTOR LO 111 ZIP-16P-M01
Contextual Info: FUJITSU February 1990 Edition 2.0 DATA SHEET M B81256-80 MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY 262,144 Bit Dynamic Random Access Memory The Fujitsu MB81256 is a fully decoded, dynamic NMOS random access memory organized as 262,144 one-bit words. The design is optimized for high speed,

MBB1256

Abstract: ds 12321 MB81256-15 MBB1256-15 MB81256-12 MB81256-10 81256 81256 256 x 1 dynamic ram 100T2 MB81256
Contextual Info: FUJITSU February 1990 Edition S.O MB81256-10/-12/-15 MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY 262,144 Bit Dynamic Random Access Memory The Fujitsu MB81256 is a fully decoded, dynamic NMOS random access memory organized as 262,144 one-bit words. The design is optimized for high speed,

SND 640 ASR

Contextual Info: FU JITSU MOS Memories • M B 85201-12, M B 85201-15 1,048,576 x 1-Bit Dynamic Random Access Memory SIP Module Description The Fujitsu MB85201 is a fully decoded, 1,048,576 word x 1-bit NMOS dynamic random access memory module consisting of four MB81256 DRAMs in 18-pad LCC packages mounted on a 22-pin

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258