MB85R256HPFTN Search Results

MB85R256HPFTN Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
MB85R256HPFTN		Fujitsu	Memory FRAM CMOS 256 K (32 K x 8) Bit		Original	PDF	236.44KB	14

MB85R256HPFTN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MB85R256HPF-G-BNDAE1 Abstract: FPT-28P-M03 FPT-28P-M17 MB85R256H MB85R256HPFCN-G-BNDAE1 MB85R256HPFGBN Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13106-4Ea Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile	Original	DS05-13106-4Ea MB85R256H MB85R256H MB85R256HPF-G-BNDAE1 FPT-28P-M03 FPT-28P-M17 MB85R256HPFCN-G-BNDAE1 MB85R256HPFGBN	PDF
MB85R256HPF Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-2E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile	Original	DS05-13106-2E MB85R256H MB85R256H F0702 MB85R256HPF	PDF
000read Abstract: MB85R256HPF FPT-28P-M03 FPT-28P-M17 MB85R256H MB85R256HPFCN MB85R256HPFTN TCA 120 Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-1E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile	Original	DS05-13106-1E MB85R256H MB85R256H F0606 000read MB85R256HPF FPT-28P-M03 FPT-28P-M17 MB85R256HPFCN MB85R256HPFTN TCA 120	PDF

Catalog Datasheet

Type

Document Tags

PDF

MB85R256HPF-G-BNDAE1

Abstract: FPT-28P-M03 FPT-28P-M17 MB85R256H MB85R256HPFCN-G-BNDAE1 MB85R256HPFGBN
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13106-4Ea Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Original

DS05-13106-4Ea MB85R256H MB85R256H MB85R256HPF-G-BNDAE1 FPT-28P-M03 FPT-28P-M17 MB85R256HPFCN-G-BNDAE1 MB85R256HPFGBN

PDF

MB85R256HPF

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-2E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Original

DS05-13106-2E MB85R256H MB85R256H F0702 MB85R256HPF

PDF

000read

Abstract: MB85R256HPF FPT-28P-M03 FPT-28P-M17 MB85R256H MB85R256HPFCN MB85R256HPFTN TCA 120
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-1E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Original

DS05-13106-1E MB85R256H MB85R256H F0606 000read MB85R256HPF FPT-28P-M03 FPT-28P-M17 MB85R256HPFCN MB85R256HPFTN TCA 120

PDF