Untitled
Abstract: No abstract text available
Text: Spec.No.IGBT-SP-10009-R3 P1/3 6in1 IGBT Module MBB350TV6 PRELIMINARY SPECIFICATION Silicon N-channel IGBT 1. FEATURES * High speed, low loss IGBT module. * Low thermal impedance due to direct liquid cooling. * High reliability, high durability module. 2. ABSOLUTE MAXIMUM RATINGS (Tc=25oC )
|
Original
|
PDF
|
IGBT-SP-10009-R3
MBB350TV6
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG31 PNP 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 12 NXP Semiconductors Product specification PNP 5 GHz wideband transistor FEATURES BFG31 PINNING • High output voltage capability
|
Original
|
PDF
|
BFG31
OT223
MSB002
OT223.
BFG97.
R77/02/pp9
|
bfg97
Abstract: BFG31
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG31 PNP 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 12 NXP Semiconductors Product specification PNP 5 GHz wideband transistor FEATURES BFG31 PINNING • High output voltage capability
|
Original
|
PDF
|
BFG31
OT223
MSB002
OT223.
BFG97.
R77/02/pp9
bfg97
BFG31
|
bfg97
Abstract: BFG31
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG31 PNP 5 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification PNP 5 GHz wideband transistor FEATURES
|
Original
|
PDF
|
BFG31
OT223
MSB002
bfg97
BFG31
|