MSB002 Search Results

BUK98150-55A

Abstract: ID16 SC-73
Contextual Info: BUK98150-55A TrenchMOS logic level FET Rev. 01 — 03 October 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

PHT4NQ10T

Abstract: SC-73 09581
Contextual Info: PHT4NQ10T TrenchMOS standard level FET M3D087 Rev. 02 — 2 May 2002 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT4NQ10T in SOT223. 2. Features

buk987

Abstract: BUK9875-100A SC-73
Contextual Info: BUK9875-100A TrenchMOS logic level FET Rev. 01 — 30 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

BFG198

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a

ha 431 transistor

Abstract: BSP122 UBB073 transistor 431 N
Contextual Info: ^53^31 Philips Semiconductors Q023ñ30 APX bflñ Product specification N-channel enhancement mode vertical D-MOS transistor BSP122 N ANER PHILIPS/DISCRETE b7E D FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG31 PNP 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 12 NXP Semiconductors Product specification PNP 5 GHz wideband transistor FEATURES BFG31 PINNING • High output voltage capability

BAT160C

Abstract: BAT160S AT160C BAT160 BAT160A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 BAT160 series Schottky barrier double diodes Product specification Supersedes data of 1999 Mar 26 1999 Sep 20 Philips Semiconductors Product specification Schottky barrier double diodes FEATURES BAT160 series

BFG135 amplifier

Abstract: BFG135 BFG135 - BFG135 MBB300
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor

MBK573

Abstract: AT120A BAT120 BAT120A BAT120C BAT120S
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 BAT120 series Schottky barrier double diodes Product specification File under Discrete Semiconductors, SC01 1998 Jan 21 Philips Semiconductors Product specification Schottky barrier double diodes BAT120 series

c 129 transistor

Abstract: BLU86 SMD ic catalogue
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU86 UHF power transistor Product specification September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile

BFG35

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor

TRANSISTOR GENERAL DIGITAL L6

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor

BFG591,115

Abstract: BFG591 Application Notes
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 04 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION • High power gain

BSP225

Abstract: BP317 Philips RDS business bsp225/s911
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSP225 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor

PHT4NQ10LT

Abstract: SC-73
Contextual Info: PHT4NQ10LT N-channel enhancement mode field-effect transistor Rev. 01 — 11 September 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG94 NPN 6 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFG94 PINNING • High power gain PIN  Low noise figure 1 emitter  Low intermodulation distortion

BFG97

Abstract: BFG31 MBB350
Contextual Info: Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 PIN N IN G FEA TUR ES • High output voltage capability PIN D E S C R IP TIO N • High gain bandwidth product 1 • Good thermal stability 2 base • Gold metallization ensures

BDS77

Abstract: BDS201 BDS203 IEC134 USM35
Contextual Info: Philips Components Datasheet status Product specification date of issu* April 1991 BDS201/203/77 NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 NPN Silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

07342

Contextual Info: PHT4NQ10LT N-channel enhancement mode field-effect transistor Rev. 01 — 11 September 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

transistor smd yw

Abstract: AT120A BAT120 BAT120A BAT120C BAT120S
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D087 BAT120 series Schottky barrier double diodes Product data sheet Supersedes data of 2001 Aug 27 2003 Aug 04 NXP Semiconductors Product data sheet Schottky barrier double diodes BAT120 series FEATURES PINNING

BLT50

Abstract: philips Trimmers 2222 series MEA218 MEA223 RF Transistor smd transistor zl
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification File under Discrete Semiconductors, SC08b April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures

philips bfq

Abstract: FQ236A 236A
Contextual Info: Philips Semiconductors Product specification NPN video transistors BFQ236; BFQ236A FEATURES DESCRIPTION • High breakdow n voltages NPN vid e o tra n sisto r in a SO T223 plastic package. PNP com plem ents: BFQ 256 and BFQ 256A. • Low output capacitance