MBE REGULATOR Search Results

434mhz ask transmitter and receiver module

Abstract: RF MODULE 434Mhz PMA7110 434mhz rf transmitter and receiver module rohs rf module 434mhz EXS00A CS 3 bit magnitude comparator A 434 RF Receiver TRANSMITTER PAIR circuit diagram of 4 channel 315 rf transmitter 8051 microcontroller data sheet
Contextual Info: TargetDatasheet.book Page 1 Monday, April 28, 2008 11:16 AM P rel imin ar y D at a S he e t, V 0. 9 , A pr il 20 0 8 PMA7110 RF T r an smitt er I C w i th e mbe dd ed 80 51 Micr ocon tr olle r, LF 125 kHz AS K Re ceive r and F SK/ ASK 31 5/ 434 /8 68 /91 5 MHz

Contextual Info: SMV512K32-SP www.ti.com SLVSA21H – JUNE 2011 – REVISED JULY 2013 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial

Contextual Info: SMV512K32-SP www.ti.com SLVSA21H – JUNE 2011 – REVISED JULY 2013 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial

marking e1Z

Abstract: SRAM edac SMV512K32-SP SMV512K32 5962-1123701VXC
Contextual Info: SMV512K32-SP SLVSA21E – JUNE 2011 – REVISED DECEMBER 2011 www.ti.com 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial

SMV512K32-SP

Contextual Info: SMV512K32-SP SLVSA21C – JUNE 2011 – REVISED OCTOBER 2011 www.ti.com 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES • 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial

Contextual Info: SMV512K32-SP www.ti.com SLVSA21G – JUNE 2011 – REVISED APRIL 2012 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial

Contextual Info: SMV512K32-SP SLVSA21B – JUNE 2011 – REVISED JULY 2011 www.ti.com 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES • 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial

Contextual Info: SMV512K32-SP www.ti.com SLVSA21I – JUNE 2011 – REVISED JANUARY 2014 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial

HBT transistor

Abstract: trw rf transistor trw 131* RF POWER TRANSISTOR trw RF POWER TRANSISTOR HBT transistor GaAs TA0025
Contextual Info: TA0025  TA0025 Heterojunction Bipolar Transistor - Reliable, High Quality Solutions at a Very Low Cost
        
          Yet even with such high acceptance, there are still some lingering perceived disadvantages associated

Contextual Info: HbE D b3b?554 DORifiT? 1 « n O T b 1 z3^~0 Í MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA Édbà DMO hum MHM8N20HX, HXV (N-Channel) MHM8P20HX, HXV (P-Channel) Power Field-Effect Transistors Discrete Military Operation N-Channel/F-Channel Enhancement-Mode Complementary

regulator 7805

Abstract: voltage regulator 7805 Transistor t3 smd motorola 7805 smd REGULATOR motorola IC 7805 motorola 7805 7805 regulator smd REGULATOR IC 7805 SMD motorola diode smd 7805 motorola
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b7254 GD^Slfl? ? ■ MOTb T '^ - O S MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP300^ The RF Line U H F P o w e r T ra n sisto r The TP3004 is designed for 900 M Hz bases stations in both analog and digital applica­ tions. It incorporates high value emitter ballast resistors, gold metallizations and offers a

UT8ER512K32

Abstract: SRAM edac UT8ER512K32S mbe regulator RAM SEU RAM EDAC SEU
Contextual Info: Design Information Fact Sheet UT8ER512K32 Monolithic 16M RadHard SRAM INTRODUCTION FEATURES ‰ 20ns read, 10ns write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices ‰ CMOS compatible inputs and output levels, three-state

vk 17

Abstract: equivalent transistor T 250 TIP 141 hosiden KUC2123 mc34018 2N2222A motorola transistor data MC34014 hosiden amplified KUC2123 Hosiden MC145412 Q301
Contextual Info: MOTOROLA SC TELEC O M 4b E » H b 3 b 7 2 5 3 Q0ÔS717 ñ H i MOTS MOTOROLA i s I SEMICONDUCTOR - is * TECHNICAL DATA MC34014 S p e c ific a t io n s a n d A p p lic a t io n s In fo r m a t io n TELEPHONE SPEECH NETWORK WITH DIALER INTERFACE TELEPH O N E SPEECH N ETW ORK

SKE 4 F 2/06

Abstract: bcd to seven segment circuit diagram Standish LCD 3 1/2 digit Standish LCD 4 1/2 digit Standish LCD STANDISH LCD DISPLAYS wristwatch lcd LCD3906 hamlin lcd uPD75X
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: PD - 94965B IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description

Contextual Info: PD - 94991B IRFZ48NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description

Contextual Info: PD - 94965B IRF1010EPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description

diode marking dmx

Abstract: forward smps 12v
Contextual Info: PD - 94084B IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. ID 0.28Ω 16A 500V Features and Benefits

Contextual Info: PD - 9.1507 International IOR Rectifier PRELIMINARY IR F R /U 9 1 2 0 N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated V dss = -100V

irfb17n50l

Contextual Info: PD - 94084B IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. ID 0.28Ω 16A 500V Features and Benefits

Contextual Info: PD - 94084B IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. ID 0.28Ω 16A 500V Features and Benefits

Contextual Info: USB2250/50i/51/51i Ultra Fast USB 2.0 Multi-Slot Flash Media Controller PRODUCT FEATURES Data Brief General Description The SMSC USB2250/50i/51/51i is a USB 2.0 compliant, high speed Mass Storage Class Peripheral Controller intended for reading and writing to more than 24 popular

irf 44 n

Abstract: 1329B IRLIZ34N IRLZ34N
Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description

IRFIZ24N

Abstract: 1501a IRFZ24N irf 480 irf 044 mosfet
Contextual Info: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier