MBR40200 Search Results

MBR40200

Abstract: MBR 40150 MBR40150 4045 pt
Contextual Info: MBR4035PT - MBR40200PT CREAT BY ART Pb 40.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD RoHS COMPLIANCE Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

Contextual Info: Data Sheet Customer： Product : High Power Schottky Diode Part No.: MBR4040CT/MBR4060CT/MBR40100CT/MBR40150CT MBR40200CT/MBR0250CT Issued Date: 11-Jan-11 Edition : REV.A VIKING TECH CORPORATION 光頡科技股份有限公司 VIKING TECH CORPORATION KAOHSIUNG BRANCH

MBR40200

Abstract: MBR40200PT MBR4035PT
Contextual Info: RATINGS AND CHARACTERISTIC CURVES MBR4035PT THRU MBR40200PT Version: E10

MBR40200

Abstract: MBR40150 MBR4020 MBR40200PT PT6042 MBR40200P
Contextual Info: MBR4035PT - MBR40200PT CREAT BY ART 40.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

MBR40200

Contextual Info: MBR4035PT thru MBR40200PT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - UL Recognized File # E-326243 - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: MBR4035PT - MBR40200PT CREAT BY ART 40.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

tc-2b 94v-0

Abstract: MBR40200 MBR 40150 tc-2b 94v0 r4045 MBR40200PT MBR40150 ct 4060 pure sine wave inverter MBR4035PT
Contextual Info: s TAIWAN SEM ICONDUCTO R RoHS MBR4035PT - MBR40200PT COMPLIANCE 40.0 AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD m *=i "C Features •> V Plasllc material used carries Underwriters Laboratory Classifrcations 94V-0 ■> M a la l silico n ie c lifie r. m a jo rily c a rrie r co n d u ctio n

MBR 40150

Abstract: mbr40200
Contextual Info: MBR4035PT thru MBR40200PT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: SANGDEST MICROELECTRONICS MBR40200CT Technical Data Data Sheet N0775, Rev. - Green Products MBR40200CT SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • •

Contextual Info: MBR4035PT - MBR40200PT Pb 40.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD RoHS COMPLIANCE Features ­ UL Recognized File # E-326243 ­ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ­ Metal silicon junction, majority carrier conduction

Contextual Info: MBR4035PT thru MBR40200PT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: SANGDEST MICROELECTRONICS MBR40200WT Technical Data Data Sheet N0116, REV. A Green products MBR40200WT SCHOTTKY RECTIFIER Applications: • • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Center tap configuration

MBR40200

Abstract: MBR40100C MBR40150
Contextual Info: MBR4020C thru MBR40200C Schottky Barrier Rectifiers .189 4.82 .173(4.4) .055(1.4) .043(1.1) .026(0.68) .014(0.36) .153(3.9) .145(3.7) .1(2.54) .129(3.3) .403(10.26) 403(10 26) .385(9.8) .251(6.4) .228(5.8) .624(15.87) .057(1.45) .046(1.16) .039(1.0) .549(13.96)

MBR40200

Abstract: MBR40150 MBR10B100FCTH MBR20B100FCTH SB3200 SB3150 MBR20B150FCTH MBR20200PT MBR20B100FCT MBR50100PT
Contextual Info: s SirectSemi N g g P Green Product Copyright 2009 Sirectifier Global Corp. All Right Reserved Barrier & Breakdown Voltage V B Electronic Characteristics (V F @ 125°C & IR @ 25°C) Pt (Platinum) Barrier, 45-200V Highest Tj (150-175°C) and lowest I R (less than 10 A)