MBR8060 Search Results

Contextual Info: MCC MCC Part Number Average Forward Current @ Half-Wave Resistive Load 60 Hz If av] @ Ta O O < Maximum Peak Reverse Voltage PRV V Forward Peak Surge Current @ 8.3mS Superimposed Maximum Reverse Current @ PRV @ 25°C Ta Ifs m Ir I fm V fm A mAdc A V 7 0 AMPERE S C H O TTK Y / M IN IM O P -S M / SURFACE M O U N T _

MBR7560

Abstract: MBR8060 SBR8060 MBR756
Contextual Info: Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes u . III I ra j I.j F Notes: 1. Full threads w ithin 2 1 /2 threads 2. S tandard Polarity: Stud is Cathode Reverse P olarity: Stud is Anode Microsemi Catalog Number Industry P a rt Number SBR8060*

Contextual Info: MBR8045 thru MBR80100R Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 80 A Features • High Surge Capability • Types up to 100 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

MBR80100

Abstract: MBR8020 MBR8020R MBR8030 MBR8035 MBR8040 MBR8045 MBR8060 MBR8080
Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBR8020 R THRU MBR80100(R) SCHOTTKY DIODES STUD TYPE 80 A Features 80Amp Rectifier 20-100 Volts High Surge Capability Types up to100V V RRM DO-5 Maximum Ratings B Operating Temperature: -65 C to +150 N Storage Temperature: -65 C to +175

MBR80100

Abstract: MBR8020 MBR8030 MBR8035 MBR8040 MBR8045 MBR8060 MBR8080
Contextual Info: Transys MBR8020 R THRU MBR80100(R) Electronics L I M I T E D SCHOTTKY DIODES STUD TYPE 80 A Features 80Amp Rectifier 20-100 Volts High Surge Capability Types up to100V V RRM DO-5 Maximum Ratings B Operating Temperature: -65 C to +150 N Storage Temperature: -65 C to +175

MBR8020(R)

Contextual Info: MBR8020 R DACO SEMICONDUCTOR CO., LTD. THRU MBR80100(R) SCHOTTKY DIODE MODULE TYPE S 80A Features 80Amp Rectifier 20-100 Volts High Surge Capability Types Up to 100 V VRRM Maximum Ratings DO- 5 (DO-203AB) M J Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +150

MBR8045

Contextual Info: MBR8045 thru MBR80100R Naina Semiconductor Ltd. Schottky Power Diode, 80A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)

DO-203AB

Abstract: MBR7560 MBR8060 SBR8060
Contextual Info: Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes I „ I T Í1 . 11 1 1 n F 1 ' E Notes: 1. Full threads within 2 1 /2 threads 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode Microsemi Catalog Number Industry P a rt Number

Contextual Info: MBR8045 thru MBR80100R Silicon Power Schottky Diode VRRM = 45 V - 100 V IF AV = 80 A Features • High Surge Capability • Types from 45 V to 100 V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode.

Contextual Info: MCC MBR8020 THRU MBR80100
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • 80 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton