MC 340 TRANSISTOR Search Results

MC 340 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

MC 340 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MC 340 transistor Abstract: P367 tyco igbt 1200V V23990-P367-F-PM Text: Target datasheet flow PACK 0, 1200V, 15A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P367-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung	Original	V23990-P367-F-PM -100A/ms D81359 MC 340 transistor P367 tyco igbt 1200V V23990-P367-F-PM	PDF
PCR 406 J transistor Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553 Text: MIL-s-19500/341B 2! M,KII 196S SUPERSEDING ML-s -19 W0/341A 2 November 1966 See 6.3. MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES 2N3315, TX2N337S, 2N3553, TX2N3553, 2144440 AND TX2N4440 POWER ‘his smclficctim	Original	MIL-s-19500/341B W0/341A 2N3315, TX2N337S, 2N3553, TX2N3553, TX2N4440 2N3375 gik16wwlhma lns81 PCR 406 J transistor transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553	PDF
19Sg Abstract: WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR Text: MIL-S-19500/65B 19 March 1970 SUPERSEDING MIL.S.19500/65A 19 A@ MILfTARY SEMICONDUCTOR 1963 SPECIFICATION DEVICE, TRANSISTOR, NPN, GERMANIUM, SWITCHING TYPE 2N3BS This specification partnmnk is and A~mcics mundalcvy for uc of the Department by all Deof Defense.	Original	MIL-S-19500/65B 19500/65A 2N388. UIL-S-19500165B 514AD 19Sg WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR	PDF
mdd 1051 Abstract: circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614 Text: . . . . . . . .l: :;. . . . . . . . . . . . . . . . . .’. . . . . . . . MIIA3.1950W9B 12 Ne.rch 1970 SUPERSEDING MIL.T.1950W9A 12 hub? 19s9 MSLITARY SPfXfFffXTfON .-. SFADCONDUCTOR DEVICE, TRANSISTOR, PNP, GBfMi14NIUM, HIGH-FREQUENCY	Original	1950W9B 1950W9A GBfMi14NIUM, UG-491AW 91-6C S-1950W9B Force-11 s9614163) mdd 1051 circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614	PDF
BUZ21 Abstract: sis8 Text: SIEM ENS BUZ 21 SIPMOS Power Transistor • • • N channel Enhancem ent mode Avalanche-rated Type Vps A ^DS on) Package 1> Ordering Code BUZ 21 100 V 21 A 0.085 £2 TO -220 AB C67078-S1308-A2 M axim um Ratings Param eter Continuous drain current, Tc = 25 'C	OCR Scan	C67078-S1308-A2 BUZ21 sis8	PDF
BUZ21 Abstract: No abstract text available Text: SIEMENS BUZ 21 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 21 Vbs 100 V b ^DSiort Package Ordering Code 21 A 0.085 Q TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current h Values	OCR Scan	O-220 C67078-S1308-A2 BUZ21	PDF
965 transistor Abstract: MC 340 transistor D965 Text: MC C TO-92 Piastic-Encapsulate Transistors D 965 TRANSISTOR NPN F E A T U R E S P cm ; 0 .7 5 W (Tam b = 25T C ) \• Icm : 5 A V(BR)CBO: 42 V tlon tem perature range Tj.Tsig: -551C to + 15 0 t : E L E C T R I C A L C H A R A C T E R I S T I C S (Tam b=25°C u n le s s o th e rw is e	OCR Scan	-551C 965 transistor MC 340 transistor D965	PDF
TRS601 Abstract: No abstract text available Text: 3869720 GENERAL DIODE CORF ¿3 GTS C 07C 00250 D 7- 33 -^/ _ mLaondacto%± GENERAL DIODE CORP ~ 07 DE \| 3öb17aD DDDOaSD 0 100 Ea m e s Stre e t < 6 1 7 J Ï7 2 -7 5 2 0 F r a m in g h a m , M a ss a c h u se t ts 0 1 7 0 1 SILICON NPN - Power Transistors	OCR Scan	b17aD TRS601	PDF
MC 340 transistor Abstract: D25A 2SK1251 Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSm HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER,RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS FEATURES: • 4-Volt Gate Drive • Low Drain-Source ON Resistance : RDS(0N)= 0.15Q (Typ.)	OCR Scan	100/uA MC 340 transistor D25A 2SK1251	PDF
T1IS Abstract: 60 amp 600 Volt Diode 2S05 Diode TRS3015 MD14 TRS-3204S TRS-3604S TRS-4014S TRS-4404S TRS-5204S Text: 3869720 GENERAL'DIODE CORP GENERAL DIODE CORP 07C 00251 D -7”- 3 3 t£ / Dif\| 3 0 ^ 7 8 0 DD0D551 5 07 SILICON NPN* Power Transistors TYPE NO. TRS-3204S tc MAX. COLL. OISS. HI Fit« Ah #25C P« rc/D M U ) MAX. THERMAL RES. Janetion lo C t u I7.S ABSOLUT :MAX. RATINGS #2S C.	OCR Scan	TRS-3204S TRS-3604S TRS-4014S MO-14 TRS-5755 MD-14 TRS4015 TRS-6505 T1IS 60 amp 600 Volt Diode 2S05 Diode TRS3015 MD14 TRS-4404S TRS-5204S	PDF
Untitled Abstract: No abstract text available Text: BUZ 21L Infineo n t « c h n o l o g •es SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type Vds % ^DS on Package Ordering Code BUZ21 L 100 V 21 A 0.085 ü TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter	OCR Scan	BUZ21 O-220 C67078-S1338-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T	PDF
Untitled Abstract: No abstract text available Text: _ _ _ _ _ _ PowerMOS transistor N AMER PHILIPS/DISCRETE B U Z 4 5 A _ ObE D ^ • bbSa^l O D m b S M J ’ ~ ~ T - 2? - i 3 July 1987 GENERAL DESCRIPTION N-channel enhancement moae field-effect power transistor in a metal envelope.	OCR Scan	BUZ45A_ bb53T31 0014bS7 T-39-13 T-39-13 D014bST BUZ45A	PDF
Untitled Abstract: No abstract text available Text: SIEMENS SIPMOS Power Transistor • • • BUZ 40 B N channel Enhancem ent mode Avalanche-rated Type ^DS 1D ^DS on Package 1) O rdering Code BUZ 40 B 500 V 8.5 A 0.8 a TO-220 AB C67078-S1305-A4 Maxim um Ratings Parameter Symbol Continuous drain current, Tc = 35 'C	OCR Scan	O-220 C67078-S1305-A4	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 B Vbs 1000 V b 2A ^BS on 8ß Package Ordering Code TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage ^DS Drain-gate voltage '' dgr Rq s = 20 ki2	OCR Scan	O-220 C67078-A1307-A4	PDF

Untitled Abstract: No abstract text available Text: SIEMENS BUZ 92 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 92 Vds 600 V b 3.3 A ffDS on 3 fì Package Ordering Code TO-220 AB C67078-S1343-A2 Maximum Ratings Symbol Parameter Continuous drain current Values Unit	OCR Scan	O-220 C67078-S1343-A2 35b05 000450b fl235bG5	PDF
transistor 372 Abstract: No abstract text available Text: SIEMENS BSP 372 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • ^GS th = °-8 - 2 0 v Type lD ^DS(on) Package Marking 1.7 A 0.31 Q SOT-223 BSP 372 BSP 372 Vds 100 V Type BSP 372 Ordering Code Q 67000-S300	OCR Scan	OT-223 67000-S300 E6327 transistor 372	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BUZ 41 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 41 A Vos 500 V fa 4.5 A Abs on 1 .5 ft Package Ordering Code TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Values Continuous drain current	OCR Scan	O-220 C67078-S1306-A3 00-----------------------V	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BUZ 330 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 330 Vbs 500 V hi 9.5 A % S on Package Ordering Code 0.6 n TO-218AA C67078-S3105-A2 Maximum Ratings Parameter Symbol Continuous drain current Values	OCR Scan	O-218AA C67078-S3105-A2 O-218AA	PDF
t 326 Transistor Abstract: transistor TE 901 BUZ 14 Text: SIEMENS BUZ 326 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 326 Yds 400 V Id 10.5 A RoSlon 0.5 a Package Ordering Code TO-218AA C67078-S3112-A2 Maximum Ratings Parameter Symbol Values Continuous drain current	OCR Scan	O-218AA C67078-S3112-A2 O-218 t 326 Transistor transistor TE 901 BUZ 14	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BUZ 330 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 330 Yds 500 V k> ^DS on Package Ordering Code 9.5 A 0.6 n TO-218 AA C67078-S3105-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values	OCR Scan	O-218 C67078-S3105-A2 235bG5 O-218AA	PDF
transistor buz 311 Abstract: Buz 304 C67078-S1305-A4 T-150 diode sy 104 SIEMENS mcx Text: SIEMENS BUZ 40 B SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 40 B Vds 500 V Id 8.5 A flDS on 0.8 n Package Ordering Code TO-220 AB C67078-S1305-A4 Maximum Ratings Parameter Symbol Values Continuous drain current	OCR Scan	T35I55 O-220 C67078-S1305-A4 fl235b05 A235bD5 transistor buz 311 Buz 304 C67078-S1305-A4 T-150 diode sy 104 SIEMENS mcx	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BUZ 61 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 61 Vbs 400 V b 12.5 A ffDS on Package Ordering Code 0.4 £2 TO-220 AB C67078-S1341-A2 Maximum Ratings Parameter Symbol Continuous drain current Values	OCR Scan	O-220 C67078-S1341-A2 023SbG5 0Q642EB	PDF
IRFP450FI Abstract: GC507 7W53 GC508 IRFP450 C18070 IRFW450 IRFP450F Text: 7 ^ 2 3 7 Q 0 M 5 7 4 b 1=17 « S G T H SGS-THOMSON ¡Li IT^MD éS IRFP450FI IRFW450 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTORS PRELIMINARY DATA TYPE IRFP450 IRFP450FI IRFW450 • . ■ . V dss R d S(o ii Id 500 V 500 V 500 V < 0.4 n < 0.4 O	OCR Scan	DOMS74ta IRFP450/FI IRFW450 IRFP450 IRFP450FI IRFW450 IRFP/IRFW450 IRFP450FI IRFP450/FI-IRFW450 7W537 GC507 7W53 GC508 C18070 IRFP450F	PDF
DF 331 TRANSISTOR Abstract: D F 331 TRANSISTOR transistor d 331 transistor df 331 C 331 Transistor Text: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 331 l/bs 500 V fa 8A ^%S on 0 .8 » Package Ordering Code TO-218AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values	OCR Scan	O-218AA C67078-S3114-A2 00--------V O-218AA DF 331 TRANSISTOR D F 331 TRANSISTOR transistor d 331 transistor df 331 C 331 Transistor	PDF

MC 340 TRANSISTOR Search Results

MC 340 TRANSISTOR Result Highlights (5)

MC 340 TRANSISTOR Datasheets Context Search

MC 340 transistor

PCR 406 J transistor

19Sg

mdd 1051

BUZ21

BUZ21

965 transistor

TRS601

MC 340 transistor

T1IS

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transistor 372

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t 326 Transistor

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transistor buz 311

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IRFP450FI

DF 331 TRANSISTOR