Q1xMC306
Abstract: MC-306 MC-405 MC-406 32,768 epson mc-306
Text: Crystal unit Epson Toyocom Product Number please contact us MC-306 : Q1xMC3061xxxx00 MC-405 : Q1xMC4051xxxx00 MC-406 : Q1xMC4061xxxx00 kHz RANGE CRYSTAL UNIT SMD MC - 306 MC - 405 / MC - 406 •Frequency range •Thickness •Overtone order •Applications
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MC-306
Q1xMC3061xxxx00
MC-405
Q1xMC4051xxxx00
MC-406
Q1xMC4061xxxx00
MC-405
Q1xMC306
MC-306
MC-406
32,768 epson mc-306
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Untitled
Abstract: No abstract text available
Text: Crystal unit Epson Toyocom Product Number please contact us MC-306 : Q1xMC3061xxxx00 MC-405 : Q1xMC4051xxxx00 MC-406 : Q1xMC4061xxxx00 kHz RANGE CRYSTAL UNIT SMD MC - 306 MC - 405 / MC - 406 •Frequency range •Thickness •Overtone order •Applications
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MC-306
Q1xMC3061xxxx00
MC-405
Q1xMC4051xxxx00
MC-406
Q1xMC4061xxxx00
MC-306
MC-405
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crystal 32.7680khz 6pf
Abstract: mc 306 32 MC-405 equivalent q14mc
Text: Crystal unit Epson Toyocom Product Number please contact us MC-306 : Q13MC3061xxxx00 MC-405 : Q14MC4051xxxx00 MC-406 : Q14MC4061xxxx00 kHz RANGE CRYSTAL UNIT SMD MC - 306 MC - 405 / MC - 406 •Frequency range •Thickness : : •Overtone order •Applications
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MC-306
Q13MC3061xxxx00
MC-405
Q14MC4051xxxx00
MC-406
Q14MC4061xxxx00
MC-306)
MC-405
MC-306
crystal 32.7680khz 6pf
mc 306 32
MC-405 equivalent
q14mc
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Q13MC3061
Abstract: MC-405 MC-306 MC-406 Q13MC3061xxxx00 MC-405 equivalent
Text: Crystal unit Epson Toyocom Product Number please contact us MC-306 : Q13MC3061xxxx00 MC-405 : Q1xMC4051xxxx00 MC-406 : Q1xMC4061xxxx00 kHz RANGE CRYSTAL UNIT SMD MC - 306 MC - 405 / MC - 406 •Frequency range •Thickness : : •Overtone order •Applications
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MC-306
Q13MC3061xxxx00
MC-405
Q1xMC4051xxxx00
MC-406
Q1xMC4061xxxx00
MC-405
Q13MC3061
MC-306
MC-406
Q13MC3061xxxx00
MC-405 equivalent
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32,768 epson mc-306
Abstract: MC-405 equivalent
Text: Crystal unit Epson Toyocom Product Number please contact us MC-306 : Q13MC3061xxxx00 MC-405 : Q1xMC4051xxxx00 MC-406 : Q1xMC4061xxxx00 kHz RANGE CRYSTAL UNIT SMD MC - 306 MC - 405 / MC - 406 •Frequency range •Thickness •Overtone order •Applications
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MC-306
Q13MC3061xxxx00
MC-405
Q1xMC4051xxxx00
MC-406
Q1xMC4061xxxx00
MC-306
MC-405
32,768 epson mc-306
MC-405 equivalent
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Q14MC4061xxxx00
Abstract: 32,768 epson mc-306 MC-306 MC-405 MC-406 Quartz 32768 MC-405 equivalent
Text: Crystal unit Epson Toyocom Product Number please contact us MC-306 : Q13MC3061xxxx00 MC-405 : Q14MC4051xxxx00 MC-406 : Q14MC4061xxxx00 kHz RANGE CRYSTAL UNIT SMD MC - 306 MC - 405 / MC - 406 •Frequency range •Thickness : : •Overtone order •Applications
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MC-306
Q13MC3061xxxx00
MC-405
Q14MC4051xxxx00
MC-406
Q14MC4061xxxx00
MC-306)
MC-405
Q14MC4061xxxx00
32,768 epson mc-306
MC-306
MC-406
Quartz 32768
MC-405 equivalent
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32,768 epson mc-306
Abstract: 32,768 SMD crystal Component MC-306 MC-405 MC-406 32.768 epson mc306 MC-405 equivalent
Text: Crystal unit kHz RANGE CRYSTAL UNIT SMD MC - 306 MC - 405 / MC - 406 •Frequency range •Thickness : : 32.768 kHz 20 kHz to 165 kHz 2.54 mm Max.(MC-306) 3.60 mm Max.(MC-405 / 406) : Fundamental /Overtone (307.2 kHz) : Clock and Microcomputer •Overtone order
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MC-306)
MC-405
MC-306
32,768 epson mc-306
32,768 SMD crystal Component
MC-306
MC-406
32.768 epson mc306
MC-405 equivalent
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32,768 epson mc-306
Abstract: SMD Crystal 32,768 SMD crystal Component MC-306 32.768 KHz MC-306 EPSON TOYOCOM MC-306 MC-405 MC-406 32.768 epson mc306 MC-405 equivalent
Text: Crystal unit kHz RANGE CRYSTAL UNIT SMD MC - 306 MC - 405 / MC - 406 •Frequency range •Thickness : : 32.768 kHz 20 kHz to 165 kHz 2.54 mm Max.(MC-306) 3.60 mm Max.(MC-405 / 406) : Fundamental /Overtone (307.2 kHz) : Clock and Microcomputer •Overtone order
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MC-306)
MC-405
MC-306
32,768 epson mc-306
SMD Crystal
32,768 SMD crystal Component
MC-306 32.768 KHz
MC-306 EPSON TOYOCOM
MC-306
MC-406
32.768 epson mc306
MC-405 equivalent
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MC-405 equivalent
Abstract: No abstract text available
Text: Crystal unit Epson Toyocom kHz RANGE CRYSTAL UNIT SMD MC - 306 MC - 405 / MC - 406 •Frequency range •Thickness : : 32.768 kHz 20 kHz to 165 kHz 2.54 mm Max.(MC-306) 3.60 mm Max.(MC-405 / 406) : Fundamental /Overtone (307.2 kHz) : Clock and Microcomputer
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MC-306)
MC-405
MC-306
MC-405 equivalent
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epson MARKING CODE MC
Abstract: MC-306 marking code seiko 32.768 epson mc306 SMD MARKING CODE SEIKO EPSON MC-406* marking mc 306 32 MC-405 equivalent
Text: Crystal unit kHz RANGE CRYSTAL UNIT SMD MC - 306 / 405 / 406 •Frequency range •Thickness : : 32.768 kHz 20 kHz to 165 kHz 2.54 mm Max.(MC-306) 3.60 mm Max.(MC-405 / 406) : Fundamental /Overtone (307.2 kHz) : Clock and Microcomputer Actual size : Contains high melting temperature type
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MC-306)
MC-405
MC-306
epson MARKING CODE MC
MC-306 marking code seiko
32.768 epson mc306
SMD MARKING CODE SEIKO EPSON
MC-406* marking
mc 306 32
MC-405 equivalent
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: nb 358 d
Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD PRELIMINARY DATA • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)
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ST92F124/ST92F150/ST92F250
8/16-BIT
J1850
TQFP64
14x14
PQFP100
14x20
TQFP100
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
nb 358 d
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RWR80
Abstract: RWR70
Text: INCH-POUND MIL-PRF-39007/8L w/Amendment 1 24 February 2009 SUPERSEDING MIL-PRF-39007/8L 17 October 2008 PERFORMANCE SPECIFICATION RESISTOR, FIXED, WIREWOUND POWER TYPE , NONESTABLISHED RELIABILITY, ESTABLISHED RELIABILITY, AND SPACE LEVEL, STYLE RWR80 This specification is approved for use by all Departments
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MIL-PRF-39007/8L
RWR80
MIL-PRF-39007.
RWR80,
RWR70
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Untitled
Abstract: No abstract text available
Text: IRL6283MTRPbF DirectFET N-Channel Power MOSFET Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Typical values unless otherwise specified VDSS
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IRL6283MTRPbF
J-STD-020Dâ
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Untitled
Abstract: No abstract text available
Text: IRL6283MTRPbF DirectFET N-Channel Power MOSFET Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Typical values unless otherwise specified VDSS
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IRL6283MTRPbF
J-STD-020Dâ
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874-D20
Abstract: transformer JS 0432 d 2037 transistor 2n918 die 2N918 2N918UB 2N918 thermal resistance
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 24 August 2010. MIL-PRF-19500/301K 24 May 2010 SUPERSEDING MIL-PRF-19500/301J 12 October 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, LOW-POWER,
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MIL-PRF-19500/301K
MIL-PRF-19500/301J
2N918
2N918UB,
MIL-PRF-19500.
874-D20
transformer JS 0432
d 2037 transistor
2n918 die
2N918UB
2N918 thermal resistance
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BSS 7239
Abstract: ABMT SA-NCCB04 boeing rivet NFPA-130 g2x2wh S1F-C S3FC SA-WDCB05 AIRBUS PANDUIT
Text: PANDUCT ® Wiring Duct PANDUCT ® Wiring Duct SA-WDCB05 Overview replaces SA101N64D-LP Overview New Products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A2
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SA-WDCB05
SA101N64D-LP)
Twin-70
SA-TM03CB02A
SA-NCCB04
BSS 7239
ABMT
SA-NCCB04
boeing rivet
NFPA-130
g2x2wh
S1F-C
S3FC
SA-WDCB05
AIRBUS PANDUIT
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SNVS346E
Abstract: No abstract text available
Text: LM3481 www.ti.com SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 LM3481/LM3481Q High Efficiency Low-Side N-Channel Controller for Switching Regulators Check for Samples: LM3481 FEATURES KEY SPECIFICATIONS • • • 1 2 • • • • • • • •
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LM3481
SNVS346E
LM3481/LM3481Q
LM3481QMM
VSSOP-10
AEC-Q100
10-Lead
SNVS346E
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Untitled
Abstract: No abstract text available
Text: LM3481 www.ti.com SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 LM3481/LM3481Q High Efficiency Low-Side N-Channel Controller for Switching Regulators Check for Samples: LM3481 FEATURES KEY SPECIFICATIONS • • • 1 2 • • • • • • • •
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LM3481
SNVS346E
LM3481/LM3481Q
LM3481QMM
VSSOP-10
AEC-Q100
10-Lead
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P52N06
Abstract: mosfet transistor 400 volts.100 amperes
Text: MTP52N06VL Preferred Device Power MOSFET 52 Amps, 60 Volts, Logic Level N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTP52N06VL
O-220
MTP52N06VL/D
P52N06
mosfet transistor 400 volts.100 amperes
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Untitled
Abstract: No abstract text available
Text: THICK FILM SURFACE MOUNTED NARROW BODY 3.9MM SON PAC KAG E/8, 14 AND 16 PINS • Reduced board real estate requirements ■ Compatible with automatic placement equipment ■ Tape anc reel packaging standard ■ Compliant copper leads Model 4900P Resistor Networks
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4900P
10Dppm/Â
250ppm/â
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"7 Segment Display"
Abstract: FND PIN DIAGRAM FND COMMON CATHODE DISPLAY 7SEGMENT FND508 FND530 FND500 14 segment display FND357 FND537
Text: 1-6 7-Segment Numeric Displays Character Height Inches Polarity Color Device No. FND350 .362 CA Red Description 7-Segment Display vF Decimal Ip = 20 m A /S eg V Point Lum inous/Typ Data Intensity /S e g Sheet lF = 2 0 mA Page .¡cd No. RH 450 3-5 3-5 FND357
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FND350
FND357
FND358
FND360
FND367
FND368
FND500
FND501
FND507
FND508
"7 Segment Display"
FND PIN DIAGRAM
FND COMMON CATHODE DISPLAY
7SEGMENT
FND508
FND530
FND500
14 segment display
FND357
FND537
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IRF5210
Abstract: No abstract text available
Text: PD 9.1434 International » » R e ctifie r IR F 5 2 1 0 PRELIMINARY HEXFET Power M O SFET • Advanced Process Technology • Ultra Low On-Resistancc • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated
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-100V
T0-220
IRF5210
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1N21B diode
Abstract: 1N21* Diode Detector Holder 1N28 diode 1N21B 1N23CR diode 1N358A 1N358AMR 1N358AR 1N358AM 1N53 ON
Text: M IL -S-19500/339 17 D^5«sb«r 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VIDEO DETECTOR TYPES 1N358A, 1N358AE, 1N358AM, AND 1NS58AMR This sp ecification is mandatory for u se by all Departm ents and A gen cies of the Department of D efen se.
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MIL-S-19500/339
1N358A,
1N358AR,
1N358AM,
IN358AMR
1N358A
1N358AR
1N358AM
1N358AMR
MIL-S-19500.
1N21B diode
1N21* Diode Detector Holder
1N28 diode
1N21B
1N23CR diode
1N358A
1N358AMR
1N358AR
1N358AM
1N53 ON
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1N21B diode
Abstract: 1N1132 1N21B 1N23B 1N23CR diode 1N23C ADUV 1N23B diode 1N1132R 1N26
Text: M IL-S-19500/362 3 October 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER rm rrm o JL I i ' H i û ix tiio o t v tti A IN U 1 \T 1 1 o n n Ai>i X X Ú 4 X V This specification is mandatory for use by all D epart ments and Agencies of the Department of Defense.
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MIL-S-19500/362
1N1132
1N1132R
1N1132
1N1132R.
MIL-S-19500/362
MIL-S-19500.
MIL-S-19500
1N21B diode
1N21B
1N23B
1N23CR diode
1N23C
ADUV
1N23B diode
1N1132R
1N26
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