MCH6601 Search Results

MCH6601

Abstract: TA-2457
Contextual Info: Ordering number:ENN6458 P-Channel Silicon MOSFET MCH6601 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2173 [MCH6601] 0.3 5 2 3 0.65 0.25 1 0.15 4 1.6 6 2.1 • Low ON resistance. · Ultrahigh-speed swithcing. · 2.5V drive. · Composite type with 2 MOSFETs contained in one

TA-2457

Abstract: MCH6601 IT00079 non6458a IT00085
Contextual Info: MCH6601 注文コード No. N 6 4 5 8 B 三洋半導体データシート 半導体ニューズ No.N6458A とさしかえてください。 MCH6601 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長

Contextual Info: MCH6601 Ordering number : EN6458A P-Channel Silicon MOSFET MCH6601 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

Contextual Info: MCH6601 Ordering number : EN6458B P-Channel Silicon MOSFET MCH6601 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

Contextual Info: MCH6601 Ordering number : EN6458B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6601 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

Contextual Info: Ordering number : EN6458D MCH6601 P-Channel Power MOSFET http://onsemi.com –30V, –0.2A, 10.4Ω, Dual MCPH6 Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting

en645

Abstract: MCH6601
Contextual Info: MCH6601 Ordering number : EN6458B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6601 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

Contextual Info: MCH6601 Ordering number : EN6458C SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6601 General-Purpose Switching Device Applications Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting

on line ups circuit diagrams

Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Contextual Info: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

A1857

Abstract: c4406 C5488 C5277 c4407 ph64 C-4401 C4555 A1864 C548
Contextual Info: Qui c k t :SSH' \ V \ CEO iXCV P 6 S 1e c t i on , S M C P 8 1 0 T ypo T r a n s i s t o r s 1 2 1 5 1 8 2 0 C | ‘.CP5 Unmarked'-CP6 3 0 \ «a\ 1 1 5 C5537# 2 0 C5540* 3 0 C5541# C5277 C5490# 50 C5489# A1863 C5536* 7 0 C4930 C5231 C5488# A1965 C5539#