MD1P Search Results

LED19-PR

Contextual Info: LED19-PR v 2.0 24.11.2014 Description LED19-PR series are fabricated from narrow band-gap GaInAsSb/AlGaAsSb heterostructures lattice matched to GaSb substrate. This Mid-IR LED provides a typical peak wavelength of 1.95 µm and optical power of typ. 1 mW qCW. It comes in TO-18 package, with a parabolic reflector and a without window on request .

Product line

Contextual Info: Mid-IR Products Product Line Overview Mid-Infrared Light Emitting Diodes and Photodiodes We offer: • • • • • Standard LEDs Flip-Chip bounded LEDs Multi Chip LEDs PDs LED drivers and PD amplifiers Standard LEDs LED chips with circular or ring top contact

LED43

Contextual Info: LED43 v 2.0 24.11.2014 Description LED43 series are fabricated from narrow band-gap InAsSb/InAsSbP heterostructures lattice matched to InAs substrate. This Mid-IR LED provides a typical peak wavelength of 4.15 µm and optical power of typ. 0.01 mW qCW. It comes in TO-18 package a with a glass window.

LED39-PR

Contextual Info: LED39-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 3.90 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for good electron confinement.

LED39

Contextual Info: LED39 TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 3.90 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for good electron confinement.

MDK150

Abstract: md1p LR3000
Contextual Info: Chapter 5 LR32D04 DRAM Data Buffer This chapter describes the LR32D04 DRAM Data Buffers. Chapter 5 is organized into these sections: • General Description ■ Signal Definitions ■ Data Buffer Configurations ■ Specifications Because the operation of the LR32D04 is closely tied to the LR3203

MB90675-Evaluation

Abstract: f80100h mb675 fa0157 A-1200 dbr-9 LMC907A MB90675 JP24 12 pin 4digit 7 segment display
Contextual Info: F²MC-16L Series MB90675 Series Evaluation Board USER MANUAL Printed: 12. August 1996 FUJITSU MB90675-Evaluation Board - User Manual Copyright  1996 Fujitsu Mikroelektronik GmbH. All Rights Reserved. The information in this document has been carefully checked and is believed to be entirely

zelio plc wiring diagram cable

Abstract: photovoltaic cell ana 650 2.5 kva inverter diagrams ELEVATOR LOGIC CONTROL PLC APC SMART-UPS CIRCUIT DIAGRAM MDG99603 MD1AA730PE SOLAR INVERTER 1000 watts circuit diagram 100 kva UPS APC zigbee door controller
Contextual Info: Technical education Educational solutions Catalogue 2013 - 2014 Learning a job is fine. Learning the future is better. In the future, today's businesses are going to evolve into an overall expertise that covers all types of energy. For those working in, this represents both a real

Contextual Info: LED23 rev 2.0 29.04.2015 Description LED23 series are fabricated from narrow band-gap GaInAsSb/AlGaAsSb heterostructures lattice matched to GaSb substrate. This Mid-IR LED provides a typical peak wavelength of 2.35 µm and optical power of typ. 0.8 mW qCW. It comes in TO-18 package, with cap and without window on request .

C1A13

Abstract: LR3000 DRAM controller dram memory 256kx4 lad2 5v LB03 LR3202A LR3203 LR3205 LR32D04
Contextual Info: Chapter 4 LR3203 DRAM Controller This chapter describes the LR3203 DRAM Controller. Chapter 4 is orga­ nized into these sections: • General Description ■ Concepts ■ Configuring the LR3203 ■ Signal Definitions ■ L-Bus Interface ■ DRAM Configurations

KGF1860

Abstract: M47F KGF1870 dual fet m47f M46F ME2N20 Pch MOS FET T0-252 MD05N10 MD06N20
Contextual Info: - 144 - Jft f S tt S € ffl AS ü Ì& ^ fë % t . * h' « r- % 1 V * * * (V) * * (A) P d /P c h (W) Ig s s (max) (A) Vg s (V) (min) (A) & 4# m (max) Vd s (A) (V) tt (Ta=25*C) (min) (max) Vos (V) (V) (V) Id (A) (min) (S) Vd s (V) Id (A) X ^ K - B a n d LN A

LED21

Contextual Info: LED21 v 1.0 12.02.2014 Description LED21 series are fabricated from narrow band-gap GaInAsSb/AlGaAsSb heterostructures lattice matched to GaSb substrate. This Mid-IR LED provides a typical peak wavelength of 2.15 µm and optical power of typ. 1 mW qCW. It comes in TO-18 package a with a glass window.

LED19

Contextual Info: LED19 TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions GaInAsSb are used in the active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.

LD11

Abstract: LD12 LR3203 LR3205 LR32D04 LR3000
Contextual Info: Chapter 5 LR32D04 DRAM Data Buffer This chapter describes the LR32D04 DRAM Data Buffers. Chapter 5 is organized into these sections: • General Description ■ Signal Definitions ■ Data Buffer Configurations ■ Specifications Because the operation of the LR32D04 is closely tied to the LR3203

LED20-PR

Contextual Info: LED20-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.05 µm series are based on heterostructures grown on GaSb substrates by MOCVD. GaInAsSb is used in the active layer. Wide band gap solid solutions AlGaAsSb are used for good electron confinement.

LED38

Contextual Info: LED38 v 2.0 01.12.2014 Description LED19-PR series are fabricated from narrow band-gap InAsSb/InAsSbP heterostructures lattice matched to InAs substrate. This Mid-IR LED provides a typical peak wavelength of 3.75 µm and optical power of typ. 30 µW qCW. It comes in TO-18 package, with cap and without window on request .

IR3203

Abstract: LR3000
Contextual Info: Chapter 4 LR3203 DRAM Controller This chapter describes the LR3203 DRAM Controller. Chapter 4 is orga­ nized into these sections: • General Description ■ Concepts ■ Configuring the LR3203 ■ Signal Definitions ■ L-Bus Interface ■ DRAM Configurations